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Transistores - FET, MOSFET - Simple

Registros 42.029
Página  1.394/1.502
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Paquete
En existencias
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF7705TR
Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias240.000
MOSFET (Metal Oxide)
30V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
88nC @ 10V
2774pF @ 25V
±20V
-
1.5W (Tc)
18 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
IXFT26N50Q TR
IXYS

MOSFET N-CH TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268 (IXFT)
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias7.840
MOSFET (Metal Oxide)
500V
26A (Tc)
10V
4.5V @ 4mA
95nC @ 10V
3900pF @ 25V
±20V
-
300W (Tc)
200 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268 (IXFT)
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot AO4714
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4512pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias1.149.336
MOSFET (Metal Oxide)
30V
20A (Ta)
4.5V, 10V
2.2V @ 250µA
74nC @ 10V
4512pF @ 15V
±20V
Schottky Diode (Body)
3W (Ta)
4.7 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
NTD4855N-1G
ON Semiconductor

MOSFET N-CH 25V 14A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias3.312
MOSFET (Metal Oxide)
25V
14A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
32.7nC @ 4.5V
2950pF @ 12V
±20V
-
1.35W (Ta), 66.7W (Tc)
4.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot SI4336DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias961.560
MOSFET (Metal Oxide)
30V
17A (Ta)
4.5V, 10V
3V @ 250µA
50nC @ 4.5V
5600pF @ 15V
±20V
-
1.6W (Ta)
3.25 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IXTQ160N075T
IXYS

MOSFET N-CH 75V 160A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paquete: TO-3P-3, SC-65-3
En existencias103.464
MOSFET (Metal Oxide)
75V
160A (Tc)
10V
4V @ 250µA
112nC @ 10V
4950pF @ 25V
±20V
-
360W (Tc)
6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
BUK7514-55A,127
NXP

MOSFET N-CH 55V 73A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.760
MOSFET (Metal Oxide)
55V
73A (Tc)
10V
4V @ 1mA
-
2464pF @ 25V
±20V
-
166W (Tc)
14 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPA60R450E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 9.2A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-FP
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.024
MOSFET (Metal Oxide)
600V
9.2A (Tc)
10V
3.5V @ 280µA
28nC @ 10V
620pF @ 100V
±20V
-
30W (Tc)
450 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-FP
TO-220-3 Full Pack
APT23F60B
Microsemi Corporation

MOSFET N-CH 600V 23A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 415W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias2.368
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
5V @ 1mA
110nC @ 10V
4415pF @ 25V
±30V
-
415W (Tc)
290 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
NTTFS5116PLTWG
ON Semiconductor

MOSFET P-CH 60V 5.7A 8-WDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
Paquete: 8-PowerWDFN
En existencias6.192
MOSFET (Metal Oxide)
60V
5.7A (Ta)
4.5V, 10V
3V @ 250µA
25nC @ 10V
1258pF @ 30V
±20V
-
3.2W (Ta), 40W (Tc)
52 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
AON6594
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
Paquete: 8-PowerSMD, Flat Leads
En existencias6.400
MOSFET (Metal Oxide)
30V
22A (Ta), 35A (Tc)
4.5V, 10V
2.2V @ 250µA
22nC @ 10V
1037pF @ 15V
±20V
-
5W (Ta), 39W (Tc)
7 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
SIR616DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 20.2A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 7.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 50.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paquete: PowerPAK? SO-8
En existencias4.496
MOSFET (Metal Oxide)
200V
20.2A (Tc)
7.5V, 10V
4V @ 250µA
28nC @ 7.5V
1450pF @ 100V
±20V
-
52W (Tc)
50.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI1424EDH-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 4A SOT-363

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias74.400
MOSFET (Metal Oxide)
20V
4A (Tc)
4.5V
1V @ 250µA
18nC @ 8V
-
±8V
-
1.56W (Ta), 2.8W (Tc)
33 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-363
6-TSSOP, SC-88, SOT-363
STW8N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias6.900
MOSFET (Metal Oxide)
900V
-
10V
5V @ 100µA
-
-
±30V
Current Sensing
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TP0620N3-G
Microchip Technology

MOSFET P-CH 200V 0.175A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias21.732
MOSFET (Metal Oxide)
200V
175mA (Tj)
5V, 10V
2.4V @ 1mA
-
150pF @ 25V
±20V
-
1W (Ta)
12 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot IRFI9530GPBF
Vishay Siliconix

MOSFET P-CH 100V 7.7A TO220FP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Paquete: TO-220-3 Full Pack, Isolated Tab
En existencias24.000
MOSFET (Metal Oxide)
100V
7.7A (Tc)
10V
4V @ 250µA
38nC @ 10V
860pF @ 25V
±20V
-
42W (Tc)
300 mOhm @ 4.6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
FCB070N65S3
Fairchild/ON Semiconductor

MOSFET N-CH 650V 44A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 400V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.704
MOSFET (Metal Oxide)
650V
44A (Tc)
10V
4.5V @ 4.4mA
78nC @ 10V
3090pF @ 400V
±30V
-
312W (Tc)
70 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDPF8N60ZUT
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 34.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 3.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias7.296
MOSFET (Metal Oxide)
600V
6.5A (Tc)
10V
5V @ 250µA
26nC @ 10V
1265pF @ 25V
±30V
-
34.5W (Tc)
1.35 Ohm @ 3.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot SI4447DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 40V 3.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias61.284
MOSFET (Metal Oxide)
40V
3.3A (Ta)
15V, 10V
2.2V @ 250µA
14nC @ 4.5V
805pF @ 20V
±16V
-
1.1W (Ta)
72 mOhm @ 4.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
RUQ050N02HZGTR
Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paquete: -
En existencias11.907
MOSFET (Metal Oxide)
20 V
5A (Ta)
1.5V, 4.5V
1V @ 1mA
12 nC @ 4.5 V
900 pF @ 10 V
±10V
-
950mW (Ta)
30mOhm @ 5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
SISHA12ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 22A/25A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
Paquete: -
En existencias8.994
MOSFET (Metal Oxide)
30 V
22A (Ta), 25A (Tc)
4.5V, 10V
2.2V @ 250µA
45 nC @ 10 V
2070 pF @ 15 V
+20V, -16V
-
3.5W (Ta), 28W (Tc)
4.3mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
G100N03D5
Goford Semiconductor

N-CH, 30V, 100A, RD(MAX)<3.5M@10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5595 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (4.9x5.75)
  • Package / Case: 8-PowerTDFN
Paquete: -
En existencias14.685
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
2.5V @ 250µA
38 nC @ 10 V
5595 pF @ 50 V
±20V
-
50W (Tc)
3.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (4.9x5.75)
8-PowerTDFN
SCT3105KRHRC15
Rohm Semiconductor

1200V, 24A, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 134W
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
24A (Tc)
18V
5.6V @ 3.81mA
51 nC @ 18 V
574 pF @ 800 V
+22V, -4V
-
134W
137mOhm @ 7.6A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
2SK1580-0-T1-AT
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPA60R600P6XKSA1
Infineon Technologies

MOSFET N-CH 600V 4.9A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
600 V
4.9A (Tc)
10V
4.5V @ 200µA
12 nC @ 10 V
557 pF @ 100 V
±20V
-
28W (Tc)
600mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
DMN3009LFVW-7
Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias26.295
MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
42 nC @ 10 V
2000 pF @ 15 V
±20V
-
1W (Ta)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
UF3C065040K4S
Qorvo

MOSFET N-CH 650V 54A TO247-4

  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 326W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paquete: -
En existencias1.800
-
650 V
54A (Tc)
12V
6V @ 10mA
43 nC @ 12 V
1500 pF @ 100 V
±25V
-
326W (Tc)
52mOhm @ 40A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
NVB082N65S3F
onsemi

MOSFET N-CH 650V 40A D2PAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
650 V
40A (Tc)
10V
5V @ 4mA
81 nC @ 10 V
3410 pF @ 400 V
±30V
-
313W (Tc)
82mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB