Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 59A TO252-3
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias4.352 |
|
MOSFET (Metal Oxide) | 100V | 59A (Tc) | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2500pF @ 50V | ±20V | - | 94W (Tc) | 12.2 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 650V 19A I2PAK
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias3.344 |
|
MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 2500pF @ 50V | ±25V | - | 160W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 24.3A TO-220
|
Paquete: TO-220-3 |
En existencias3.776 |
|
MOSFET (Metal Oxide) | 650V | 24.3A (Tc) | 10V | 3.9V @ 1.2mA | 135nC @ 10V | 3000pF @ 25V | ±20V | - | 240W (Tc) | 160 mOhm @ 15.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
CONSUMER
|
Paquete: - |
En existencias6.432 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V SAWN BARE DIE
|
Paquete: Die |
En existencias4.240 |
|
MOSFET (Metal Oxide) | 100V | 1A (Tj) | 4.5V | 2.1V @ 12µA | - | - | - | - | - | 100 mOhm @ 2A, 4.5V | - | Surface Mount | Sawn on foil | Die |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 200V 220A SOT-227
|
Paquete: SOT-227-4, miniBLOC |
En existencias5.920 |
|
MOSFET (Metal Oxide) | 200V | 220A | 10V | 5.1V @ 500µA | 350nC @ 10V | 21000pF @ 50V | ±30V | - | 789W (Tc) | 7 mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 600V 40A SOT-227
|
Paquete: SOT-227-4, miniBLOC |
En existencias6.416 |
|
MOSFET (Metal Oxide) | 600V | 40A | 10V | 3.9V @ 1mA | 259nC @ 10V | 7015pF @ 25V | ±20V | - | 290W (Tc) | 70 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 55V 110A TO-3P
|
Paquete: TO-3P-3, SC-65-3 |
En existencias162.996 |
|
MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 5.5V @ 250µA | 76nC @ 10V | 2210pF @ 25V | ±20V | - | 390W (Tc) | 13.5 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 650V 120A TO-264
|
Paquete: TO-264-3, TO-264AA |
En existencias4.976 |
|
MOSFET (Metal Oxide) | 650V | 120A (Tc) | 10V | 4.5V @ 8mA | 240nC @ 10V | 13600pF @ 25V | ±30V | - | 1250W (Tc) | 24 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 650V 102A X2 TO-264
|
Paquete: TO-264-3, TO-264AA |
En existencias2.100 |
|
MOSFET (Metal Oxide) | 650V | 102A (Tc) | 10V | 5V @ 250µA | 152nC @ 10V | 10900pF @ 25V | ±30V | - | 1040W (Tc) | 30 mOhm @ 51A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
STMicroelectronics |
MOSFET N-CH 650V 42A TO-220FP
|
Paquete: TO-220-3 Full Pack |
En existencias3.968 |
|
MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | ±25V | - | 40W (Tc) | 63 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 1050V 1.5A TO-220AB
|
Paquete: TO-220-3 |
En existencias6.732 |
|
MOSFET (Metal Oxide) | 1050V | 1.5A (Tc) | 10V | 5V @ 100µA | 10nC @ 10V | 115pF @ 100V | ±30V | - | 60W (Tc) | 8 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-262
|
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA |
En existencias9.720 |
|
MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | ±20V | - | 160W (Tc) | 18 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO263
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias413.700 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 6.5A IPAK
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias20.412 |
|
MOSFET (Metal Oxide) | 800V | 6.5A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 620pF @ 25V | ±30V | - | 90W (Tc) | 1.05 Ohm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CHAN 2.5V SO8
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias567.216 |
|
MOSFET (Metal Oxide) | 20V | 13.6A (Ta), 49A (Tc) | 2.5V, 10V | 1.4V @ 250µA | 162nC @ 10V | 4250pF @ 15V | ±12V | - | 2.7W (Ta), 5W (Tc) | 8 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 12V 500MA 0806
|
Paquete: PowerPAK? 0806 |
En existencias27.546 |
|
MOSFET (Metal Oxide) | 12V | 500mA (Tc) | 1.2V, 4.5V | 900mV @ 250µA | 0.71nC @ 4.5V | 21pF @ 6V | ±5V | - | 1.25W (Ta) | 340 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 0806 | PowerPAK? 0806 |
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Diodes Incorporated |
MOSFET P-CH 40V 14A TO252 DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias38.244 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 47.5nC @ 5V | 4234pF @ 20V | ±25V | - | 3.5W (Ta) | 11 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHANNEL 400V
|
Paquete: - |
En existencias8.478 |
|
MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 4V @ 250µA | 12 nC @ 10 V | 170 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPAK, TO-251AA |
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Infineon Technologies |
TRENCH 40<-<100V
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.8V @ 280µA | 223 nC @ 10 V | 16900 pF @ 40 V | ±20V | - | 375W (Tc) | 2mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 75A (Ta) | 4.5V, 10V | 3V @ 250µA | 31 nC @ 5 V | 2400 pF @ 15 V | ±20V | - | 1.6W (Ta) | 6.2mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPAK |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 180MA VESM
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 1V @ 1mA | - | 9.5 pF @ 3 V | ±10V | - | 150mW (Ta) | 3Ohm @ 50mA, 4V | 150°C | Surface Mount | VESM | SOT-723 |
||
onsemi |
MOSFET N-CH 25V 13.3A/89A DPAK
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 13.3A (Ta), 89A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 27 nC @ 4.5 V | 2241 pF @ 12 V | ±20V | - | 1.33W (Ta), 60W (Tc) | 4.7mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 300V 72A TO3P
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 300 V | 72A (Tc) | 10V | 4.5V @ 1.5mA | 82 nC @ 10 V | 5400 pF @ 25 V | ±20V | - | 390W (Tc) | 19mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
COOLMOS CFD7 SUPERJUNCTION MOSFE
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 4.5V @ 260µA | 23 nC @ 10 V | 1044 pF @ 400 V | ±20V | - | 81W (Tc) | 200mOhm @ 5.2A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Micro Commercial Co |
Interface
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 220mA | 4.5V, 10V | 1.45V @ 250µA | - | 22.8 pF @ 25 V | ±20V | - | 350mW | 3Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
DISCRETE
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 4V @ 250µA | 35 nC @ 10 V | 2750 pF @ 25 V | ±20V | - | 136W (Tc) | 2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 6V, 10V | 3.3V @ 75µA | 66 nC @ 10 V | 5125 pF @ 30 V | ±20V | - | 3W (Ta), 136W (Tc) | 2.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |