Página 1108 - Transistores - FET, MOSFET - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simple

Registros 42.029
Página  1.108/1.502
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IPD60R520C6
Infineon Technologies

MOSFET N-CH 600V 8.1A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias10.332
MOSFET (Metal Oxide)
600V
8.1A (Tc)
10V
3.5V @ 230µA
23.4nC @ 10V
512pF @ 100V
±20V
-
66W (Tc)
520 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF6623TR1
Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
Paquete: DirectFET? Isometric ST
En existencias58.980
MOSFET (Metal Oxide)
20V
16A (Ta), 55A (Tc)
4.5V, 10V
2.2V @ 250µA
17nC @ 4.5V
1360pF @ 10V
±20V
-
1.4W (Ta), 42W (Tc)
5.7 mOhm @ 15A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? ST
DirectFET? Isometric ST
GP1M009A070F
Global Power Technologies Group

MOSFET N-CH 700V 9A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1944pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.376
MOSFET (Metal Oxide)
700V
9A (Tc)
10V
4V @ 250µA
30nC @ 10V
1944pF @ 25V
±30V
-
52W (Tc)
1.05 Ohm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
RJK5013DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 500V 14A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 465 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.232
MOSFET (Metal Oxide)
500V
14A (Ta)
10V
-
38nC @ 10V
1450pF @ 25V
±30V
-
30W (Tc)
465 mOhm @ 7A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
FQI12N60CTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 12A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA
En existencias2.592
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
4V @ 250µA
63nC @ 10V
2290pF @ 25V
±30V
-
3.13W (Ta), 225W (Tc)
650 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
FDU8882
Fairchild/ON Semiconductor

MOSFET N-CH 30V 55A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias6.784
MOSFET (Metal Oxide)
30V
12.6A (Ta), 55A (Tc)
4.5V, 10V
2.5V @ 250µA
33nC @ 10V
1260pF @ 15V
±20V
-
55W (Tc)
11.5 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA
IPD90N06S405ATMA2
Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.016
MOSFET (Metal Oxide)
60V
90A (Tc)
10V
4V @ 60µA
81nC @ 10V
6500pF @ 25V
±20V
-
107W (Tc)
5.1 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPak (2 Leads + Tab), SC-63
APL602B2G
Microsemi Corporation

MOSFET N-CH 600V 49A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias3.152
MOSFET (Metal Oxide)
600V
49A (Tc)
12V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
730W (Tc)
125 mOhm @ 24.5A, 12V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
hot HUF75639G3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias498.828
MOSFET (Metal Oxide)
100V
56A (Tc)
10V
4V @ 250µA
130nC @ 20V
2000pF @ 25V
±20V
-
200W (Tc)
25 mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
PMPB215ENEA/FX
Nexperia USA Inc.

PMPB215ENEA/SOT1220/SOT1220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
En existencias4.688
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDMS86202
Fairchild/ON Semiconductor

MOSFET N-CH 120V 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 60V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias6.688
MOSFET (Metal Oxide)
120V
13.5A (Ta)
6V, 10V
4V @ 250µA
64nC @ 10V
4250pF @ 60V
±20V
-
2.7W (Ta), 156W (Tc)
7.2 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
PSMN027-100BS,118
Nexperia USA Inc.

MOSFET N-CH 100V 37A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1624pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 103W (Tc)
  • Rds On (Max) @ Id, Vgs: 26.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias16.428
MOSFET (Metal Oxide)
100V
37A (Tc)
10V
4V @ 1mA
30nC @ 10V
1624pF @ 50V
±20V
-
103W (Tc)
26.8 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB23N80K5
STMicroelectronics

MOSFET N-CH 800V 16A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.096
MOSFET (Metal Oxide)
800V
16A (Tc)
10V
5V @ 100µA
33nC @ 10V
1000pF @ 100V
±30V
-
190W (Tc)
280 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP75N04YUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 75A 8HSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 138W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 37.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSON
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
Paquete: 8-SMD, Flat Lead Exposed Pad
En existencias6.800
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 250µA
116nC @ 10V
6450pF @ 25V
±20V
-
1W (Ta), 138W (Tc)
4.8 mOhm @ 37.5A, 10V
175°C (TJ)
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
DMT69M8LSS-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V,SO-8,T&R,2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias5.952
MOSFET (Metal Oxide)
60V
9.8A (Ta)
4.5V, 10V
2V @ 250µA
33.5nC @ 10V
1925pF @ 30V
±16V
-
1.25W (Ta)
12 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot RTU002P02T106
Rohm Semiconductor

MOSFET P-CH 20V 0.25A SOT-323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 250mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
Paquete: SC-70, SOT-323
En existencias3.082.032
MOSFET (Metal Oxide)
20V
250mA (Ta)
2.5V, 4.5V
2V @ 1mA
-
50pF @ 10V
±12V
-
200mW (Ta)
1.5 Ohm @ 250mA, 4.5V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
BUK7609-75A,118
Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias38.076
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 1mA
-
6760pF @ 25V
±20V
-
230W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK39J60W5,S1VQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 38.8A TO-3P(N)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
Paquete: TO-3P-3, SC-65-3
En existencias9.384
MOSFET (Metal Oxide)
600V
38.8A (Ta)
10V
3.7V @ 1.9mA
135nC @ 10V
4100pF @ 300V
±30V
Super Junction
270W (Tc)
65 mOhm @ 19.4A, 10V
150°C (TJ)
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
IRFR1N60ATRPBF-BE3
Vishay Siliconix

MOSFET N-CH 600V 1.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
En existencias5.607
MOSFET (Metal Oxide)
600 V
1.4A (Tc)
-
4V @ 250µA
14 nC @ 10 V
229 pF @ 25 V
±30V
-
36W (Tc)
7Ohm @ 840mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMT6005LFG-13
Diodes Incorporated

MOSFET N-CH 60V PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.98W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
60 V
18A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 250µA
48.7 nC @ 10 V
3150 pF @ 30 V
±20V
-
1.98W (Ta), 62.5W (Tc)
4.1mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
CMUDM8005-TR-PBFREE
Central Semiconductor Corp

MOSFET P-CH 20V 650MA SOT523

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
En existencias64.008
MOSFET (Metal Oxide)
20 V
650mA (Ta)
1.8V, 4.5V
1V @ 250µA
1.2 nC @ 4.5 V
100 pF @ 16 V
8V
-
300mW (Ta)
360mOhm @ 350mA, 4.5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
IXFN1993
IXYS

MOSFET N-CH 19A SOT-227B

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
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DMP4025LK3Q-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
En existencias7.500
MOSFET (Metal Oxide)
40 V
6.7A (Ta)
4.5V, 10V
1.8V @ 250µA
33.7 nC @ 10 V
1643 pF @ 20 V
±20V
-
1.7W (Ta)
25mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
MSC040SMA120S-TR
Microchip Technology

MOSFET SIC 1200 V 40 MOHM TO-268

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 303W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Paquete: -
En existencias1.191
SiCFET (Silicon Carbide)
1200 V
64A (Tc)
20V
2.6V @ 2mA
137 nC @ 20 V
1990 pF @ 1000 V
+23V, -10V
-
303W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
STW70N65DM6-4
STMicroelectronics

MOSFET N-CH 650V 68A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
650 V
68A (Tc)
10V
4.75V @ 250µA
125 nC @ 10 V
4900 pF @ 100 V
±25V
-
450W (Tc)
40mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
IXTA3N100D2HV
IXYS

MOSFET N-CH 1000V 3A TO263HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263HV
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
3A (Tj)
0V
4.5V @ 250µA
37.5 nC @ 5 V
1020 pF @ 25 V
±20V
Depletion Mode
125W (Tc)
6Ohm @ 1.5A, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263HV
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SSM3J145TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
Paquete: -
En existencias30.759
MOSFET (Metal Oxide)
20 V
3A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
+6V, -8V
-
500mW (Ta)
103mOhm @ 1A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Lead
94-2311PBF
Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
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