Página 14 - Transistores - FET, MOSFET - RF | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - RF

Registros 3.855
Página  14/138
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212001F1V4XWSA1
Infineon Technologies

IC RF POWER TRANSISTOR

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
Paquete: 2-Flatpack, Fin Leads, Flanged
En existencias2.288
2.14GHz
15.8dB
30V
-
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
PTVA123501FCV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias4.304
-
-
-
-
-
-
-
-
-
-
PTFA192001FV4FWSA1
Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15.9dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
Paquete: 2-Flatpack, Fin Leads, Flanged
En existencias6.368
1.99GHz
15.9dB
30V
10µA
-
1.8A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
MPF102_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 20MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 20mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias6.928
-
-
-
20mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF6V10250HSR5
NXP

FET RF 100V 1.09GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.09GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 250W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
Paquete: NI-780S
En existencias2.064
1.09GHz
21dB
50V
-
-
250mA
250W
100V
NI-780S
NI-780S
hot MRF6S19100GNR1
NXP

FET RF 68V 1.99GHZ TO-270-2 GW

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
Paquete: TO-270-2 Gull Wing
En existencias9.036
1.99GHz
14.5dB
28V
-
-
950mA
22W
68V
TO-270-2 Gull Wing
TO-270-2 GULL
MRF21045LSR5
NXP

FET RF 65V 2.17GHZ NI-400S

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz ~ 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-400S
  • Supplier Device Package: NI-400S
Paquete: NI-400S
En existencias7.696
2.16GHz ~ 2.17GHz
15dB
28V
-
-
500mA
10W
65V
NI-400S
NI-400S
hot MRF6S21100HSR3
NXP

FET RF 68V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
Paquete: NI-780S
En existencias3.360
2.11GHz ~ 2.17GHz
15.9dB
28V
-
-
950mA
23W
68V
NI-780S
NI-780S
hot SHF-0189
RFMD

FET RF 9V 1.96GHZ SOT-89

  • Transistor Type: HFET
  • Frequency: 1.96GHz
  • Gain: 20.1dB
  • Voltage - Test: 8V
  • Current Rating: 200mA
  • Noise Figure: 3.2dB
  • Current - Test: 100mA
  • Power - Output: 27.5dBm
  • Voltage - Rated: 9V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paquete: TO-243AA
En existencias12.852
1.96GHz
20.1dB
8V
200mA
3.2dB
100mA
27.5dBm
9V
TO-243AA
SOT-89
BLF202,115
Ampleon USA Inc.

RF FET NCHA 40V 13DB SOT409A

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 13dB
  • Voltage - Test: 12.5V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 2W
  • Voltage - Rated: 40V
  • Package / Case: SOT-409A
  • Supplier Device Package: 8-CDIP
Paquete: SOT-409A
En existencias2.416
175MHz
13dB
12.5V
1A
-
20mA
2W
40V
SOT-409A
8-CDIP
BLS9G3135L-400U
Ampleon USA Inc.

BLS9G3135L-400/SOT502/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.576
-
-
-
-
-
-
-
-
-
-
MRFE6VP5600HR6
NXP

FET RF 2CH 130V 230MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
Paquete: NI-1230
En existencias4.128
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230
NI-1230
BLC8G27LS-210PVZ
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12513

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.73A
  • Power - Output: 65W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1251-3
  • Supplier Device Package: 8-DFM
Paquete: SOT-1251-3
En existencias3.856
2.6GHz ~ 2.7GHz
17dB
28V
-
-
1.73A
65W
65V
SOT-1251-3
8-DFM
BLF8G22LS-270GV,12
Ampleon USA Inc.

RF FET LDMOS 65V 17.3DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.4A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
Paquete: SOT-1244C
En existencias5.664
2.11GHz ~ 2.17GHz
17.3dB
28V
-
-
2.4A
80W
65V
SOT-1244C
CDFM6
AFT21S230SR5
NXP

FET RF 65V 2.11GHZ NI780S-6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 16.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.5A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S-6
Paquete: NI-780S
En existencias5.440
2.11GHz
16.7dB
28V
-
-
1.5A
50W
65V
NI-780S
NI-780S-6
ARF468BG
Microsemi Corporation

RF MOSFET (VDMOS)

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 15dB
  • Voltage - Test: 150V
  • Current Rating: 22A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: 500V
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
Paquete: TO-264-3, TO-264AA
En existencias6.192
40.68MHz
15dB
150V
22A
-
-
300W
500V
TO-264-3, TO-264AA
TO-264
BLP10H630PGY
Ampleon USA Inc.

BLP10H630PG/SOT1224/REELDP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.864
-
-
-
-
-
-
-
-
-
-
ATF-55143-TR2G
Broadcom Limited

FET RF 5V 2GHZ SOT-343

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 17.7dB
  • Voltage - Test: 2.7V
  • Current Rating: 100mA
  • Noise Figure: 0.6dB
  • Current - Test: 10mA
  • Power - Output: 14.4dBm
  • Voltage - Rated: 5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
Paquete: SC-82A, SOT-343
En existencias7.056
2GHz
17.7dB
2.7V
100mA
0.6dB
10mA
14.4dBm
5V
SC-82A, SOT-343
SOT-343
hot PD85035-E
STMicroelectronics

FET RF 40V 870MHZ

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
Paquete: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
En existencias6.176
870MHz
17dB
13.6V
8A
-
350mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
NPTB00025B
M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: 5.4A
  • Noise Figure: -
  • Current - Test: 225mA
  • Power - Output: -
  • Voltage - Rated: 100V
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias6.080
0Hz ~ 4GHz
13.5dB
28V
5.4A
-
225mA
-
100V
-
-
MRF1K50GNR5
NXP

WIDEBAND RF POWER LDMOS TRANSIST

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 500MHz
  • Gain: 23dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1500W
  • Voltage - Rated: 50V
  • Package / Case: OM-1230G-4L
  • Supplier Device Package: OM-1230G-4L
Paquete: OM-1230G-4L
En existencias6.272
1.8MHz ~ 500MHz
23dB
50V
-
-
-
1500W
50V
OM-1230G-4L
OM-1230G-4L
BLF8G24LS-150GVJ
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1244C

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244C
  • Supplier Device Package: CDFM6
Paquete: SOT-1244C
En existencias5.808
2.3GHz ~ 2.4GHz
19dB
28V
-
-
1.3A
45W
65V
SOT-1244C
CDFM6
BLF13H9L750PU
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539A

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 19dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 750W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-539A
  • Supplier Device Package: SOT539A
Paquete: -
En existencias165
1.3GHz
19dB
50 V
2.8µA
-
200 mA
750W
108 V
SOT-539A
SOT539A
PTRA094252FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 746MHz ~ 960MHz
  • Gain: 23dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 351.5W
  • Voltage - Rated: 105 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
Paquete: -
Request a Quote
746MHz ~ 960MHz
23dB
-
10µA
-
-
351.5W
105 V
H-37248-4
H-37248-4
PTGA090304MD-V1-R5
MACOM Technology Solutions

RF MOSFET LDMOS 50V 14HB1DSO

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 32dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 144 mA
  • Power - Output: 30W
  • Voltage - Rated: 105 V
  • Package / Case: 14-PowerSMD Module
  • Supplier Device Package: PG-HB1DSO-14-1
Paquete: -
Request a Quote
960MHz
32dB
50 V
1µA
-
144 mA
30W
105 V
14-PowerSMD Module
PG-HB1DSO-14-1
BLS9G2731LS-400
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 13dB
  • Voltage - Test: 32 V
  • Current Rating: 4µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 400W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
Paquete: -
Request a Quote
2.7GHz ~ 3.1GHz
13dB
32 V
4µA
-
400 mA
400W
65 V
SOT-502B
SOT502B
B11G3338N81DYZ
Ampleon USA Inc.

RF MOSFET LDMOS 36QFN

  • Transistor Type: LDMOS
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 34dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 28 V
  • Package / Case: 36-QFN Exposed Pad
  • Supplier Device Package: 36-PQFN (12x7)
Paquete: -
En existencias411
3.3GHz ~ 3.8GHz
34dB
-
-
-
-
-
28 V
36-QFN Exposed Pad
36-PQFN (12x7)
WS1A2639-V1-R3K
MACOM Technology Solutions

RF MOSFET GAN 48V 20LGA

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 8W
  • Voltage - Rated: 125 V
  • Package / Case: 20-TFLGA Exposed Pad
  • Supplier Device Package: 20-LGA (6x6)
Paquete: -
Request a Quote
2.496GHz ~ 2.69GHz
16.9dB
48 V
-
-
50 mA
8W
125 V
20-TFLGA Exposed Pad
20-LGA (6x6)