Página 110 - Transistores - FET, MOSFET - RF | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - RF

Registros 3.855
Página  110/138
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212001F1V4R250XTMA1
Infineon Technologies

IC RF POWER TRANSISTOR

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
Paquete: 2-Flatpack, Fin Leads, Flanged
En existencias6.368
2.14GHz
15.8dB
30V
-
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
PTFA261301F V1
Infineon Technologies

IC FET RF LDMOS 130W H-31260-2

  • Transistor Type: LDMOS
  • Frequency: 2.68GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 130W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-31260-2
Paquete: 2-Flatpack, Fin Leads, Flanged
En existencias2.512
2.68GHz
13.5dB
28V
10µA
-
1.4A
130W
65V
2-Flatpack, Fin Leads, Flanged
H-31260-2
PTFA212001EV4XWSA1
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
Paquete: 2-Flatpack, Fin Leads
En existencias5.776
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
BLC8G24LS-240AVZ
Ampleon USA Inc.

RF FET LDMOS 65V 14.5DB SOT12521

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 56W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1252-1
  • Supplier Device Package: SOT1252-1
Paquete: SOT-1252-1
En existencias2.080
2.3GHz ~ 2.4GHz
14.5dB
28V
-
-
500mA
56W
65V
SOT-1252-1
SOT1252-1
BLF8G22LS-310AVJ
NXP

IC TRANS LDMOS 140W ACC-8L

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias5.856
-
-
-
-
-
-
-
-
-
-
2N5245_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias3.568
-
-
-
15mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE3514S02-A
CEL

HJ-FET NCH 10DB S02

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 10dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.75dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
Paquete: 4-SMD, Flat Leads
En existencias2.960
20GHz
10dB
2V
70mA
0.75dB
10mA
-
4V
4-SMD, Flat Leads
S02
MW6S010GMR1
NXP

FET RF 68V 960MHZ TO270-2GW

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2 Gull Wing
  • Supplier Device Package: TO-270-2 GULL
Paquete: TO-270-2 Gull Wing
En existencias3.200
960MHz
18dB
28V
-
-
125mA
10W
68V
TO-270-2 Gull Wing
TO-270-2 GULL
MRF5S21130HSR3
NXP

FET RF 65V 2.17GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
Paquete: NI-880S
En existencias6.624
2.11GHz ~ 2.17GHz
13.5dB
28V
-
-
1.2A
28W
65V
NI-880S
NI-880S
BF556B,215
NXP

JFET N-CH 30V 13MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 13mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias7.744
-
-
-
13mA
-
-
-
30V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
PTRA094252FCV1R0XTMA1
Infineon Technologies

IC RF LDMOS FET H-37248-4

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 746MHz ~ 960MHz
  • Gain: 23dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 351.5W
  • Voltage - Rated: 105V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
Paquete: H-37248-4
En existencias4.224
746MHz ~ 960MHz
23dB
-
10µA
-
-
351.5W
105V
H-37248-4
H-37248-4
PTFB211501EV1R250XTMA1
Infineon Technologies

FET RF LDMOS 150W H36248-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
Paquete: 2-Flatpack, Fin Leads
En existencias4.480
2.17GHz
18dB
30V
-
-
1.2A
40W
65V
2-Flatpack, Fin Leads
H-36248-2
PTVA120252MTV1R1KXUMA1
Infineon Technologies

IC RF LDMOS FET 16SOIC

  • Transistor Type: LDMOS (Dual)
  • Frequency: 500MHz ~ 1.4GHz
  • Gain: 20.2dB
  • Voltage - Test: -
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 30.2W
  • Voltage - Rated: 105V
  • Package / Case: 16-TDFN Exposed Pad
  • Supplier Device Package: PG-SON-16
Paquete: 16-TDFN Exposed Pad
En existencias2.240
500MHz ~ 1.4GHz
20.2dB
-
10µA
-
-
30.2W
105V
16-TDFN Exposed Pad
PG-SON-16
BLF10H6600PU
Ampleon USA Inc.

RF FET LDMOS 110V 20.8DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 20.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
Paquete: SOT539A
En existencias4.080
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539A
SOT539A
AFT18S260W31GSR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 19.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780GS-2L2LA
  • Supplier Device Package: NI-780GS-2L2LA
Paquete: NI-780GS-2L2LA
En existencias6.384
1.88GHz
19.6dB
28V
-
-
1.8A
50W
65V
NI-780GS-2L2LA
NI-780GS-2L2LA
MRF8S9232NR3
NXP

FET RF 70V 960MHZ OM780-2

  • Transistor Type: N-Channel
  • Frequency: 960MHz
  • Gain: 18.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 63W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
Paquete: OM-780-2
En existencias6.304
960MHz
18.1dB
28V
-
-
1.4A
63W
70V
OM-780-2
OM-780-2
hot AFT26HW050SR3
NXP

FET RF 2CH 65V 2.69GHZ NI780-4S4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.69GHz
  • Gain: 14.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 9W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4S4
  • Supplier Device Package: NI-780-4S4
Paquete: NI-780-4S4
En existencias9.216
2.69GHz
14.2dB
28V
-
-
100mA
9W
65V
NI-780-4S4
NI-780-4S4
STAC250V2-500E
STMicroelectronics

TRANS RF 500W 250V STAC177B

  • Transistor Type: N-Channel
  • Frequency: 27MHz
  • Gain: 21.5dB
  • Voltage - Test: 150V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 3.5W
  • Voltage - Rated: 900V
  • Package / Case: STAC177B
  • Supplier Device Package: STAC177B
Paquete: STAC177B
En existencias6.224
27MHz
21.5dB
150V
-
-
-
3.5W
900V
STAC177B
STAC177B
PD55015TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14dB
  • Voltage - Test: 12.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
Paquete: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
En existencias5.296
500MHz
14dB
12.5V
5A
-
150mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
PD85035STR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
Paquete: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
En existencias2.592
870MHz
17dB
13.6V
8A
-
350mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
PowerSO-10RF (Straight Lead)
PD57006STR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 70mA
  • Power - Output: 6W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
Paquete: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
En existencias16.212
945MHz
15dB
28V
1A
-
70mA
6W
65V
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
PowerSO-10RF (Straight Lead)
BLF879P,112
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 42V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 200W
  • Voltage - Rated: 104V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
Paquete: SOT539A
En existencias5.904
860MHz
21dB
42V
-
-
1.3A
200W
104V
SOT539A
SOT539A
PD57030-E
STMicroelectronics

FET RF 65V 945MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
Paquete: PowerSO-10 Exposed Bottom Pad
En existencias8.748
945MHz
14dB
28V
4A
-
50mA
30W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
CGH40006P
Cree/Wolfspeed

FET RF 84V 6GHZ 440109

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 3.5A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: 440109
  • Supplier Device Package: 440109
Paquete: 440109
En existencias9.324
0Hz ~ 6GHz
13dB
28V
3.5A
-
100mA
8W
84V
440109
440109
GTVA101K42EV-V1-R250
MACOM Technology Solutions

RF MOSFET HEMT 50V H-36275-4

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 1400W
  • Voltage - Rated: 125 V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
Paquete: -
Request a Quote
960MHz ~ 1.215GHz
17dB
50 V
-
-
200 mA
1400W
125 V
H-36275-4
H-36275-4
AFIC31025NR1
NXP

RF MOSFET LDMOS TO270-17

  • Transistor Type: LDMOS
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 30dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 25W
  • Voltage - Rated: 32 V
  • Package / Case: TO-270-17 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-17
Paquete: -
Request a Quote
2.7GHz ~ 3.1GHz
30dB
-
-
-
-
25W
32 V
TO-270-17 Variant, Flat Leads
TO-270WB-17
CLF3H0060-10U
Ampleon USA Inc.

RF MOSFET GAN HEMT 50V CDFM2

  • Transistor Type: GaN HEMT
  • Frequency: 6GHz
  • Gain: 20.1dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 10W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1227A
  • Supplier Device Package: CDFM2
Paquete: -
En existencias135
6GHz
20.1dB
50 V
-
-
40 mA
10W
150 V
SOT-1227A
CDFM2
MHT1801B
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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