Página 106 - Transistores - FET, MOSFET - RF | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - RF

Registros 3.855
Página  106/138
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA071701EV4XWSA1
Infineon Technologies

FET RF LDMOS 170W H36248-2

  • Transistor Type: LDMOS
  • Frequency: 765MHz
  • Gain: 18.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
Paquete: 2-Flatpack, Fin Leads
En existencias5.072
765MHz
18.7dB
30V
-
-
900mA
150W
65V
2-Flatpack, Fin Leads
H-36248-2
PTFA181001FV4R250FTMA1
Infineon Technologies

IC FET RF LDMOS 100W H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
Paquete: 2-Flatpack, Fin Leads, Flanged
En existencias7.792
1.88GHz
16.5dB
28V
1µA
-
750mA
100W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
PTFA082201EV4XWSA1
Infineon Technologies

FET RF 65V 894MHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 894MHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.95A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
Paquete: 2-Flatpack, Fin Leads
En existencias3.488
894MHz
18dB
30V
10µA
-
1.95A
220W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA080551F V1
Infineon Technologies

IC FET RF LDMOS 55W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
Paquete: 2-Flatpack, Fin Leads, Flanged
En existencias7.184
960MHz
18.5dB
28V
10µA
-
600mA
55W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
hot MRF7S21170HR3
NXP

FET RF 65V 2.17GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
Paquete: NI-880
En existencias4.352
2.17GHz
16dB
28V
-
-
1.4A
50W
65V
NI-880
NI-880
BLF7G22L-200,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.62A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
Paquete: SOT-502A
En existencias5.328
2.11GHz ~ 2.17GHz
18.5dB
28V
-
-
1.62A
55W
65V
SOT-502A
LDMOST
ON5257,215
NXP

MOSFET RF SOT23 TO-236AB

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias6.720
-
-
-
-
-
-
-
-
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MRF8S18120HR5
NXP

FET RF 65V 1.81GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz
  • Gain: 18.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 72W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
Paquete: NI-780
En existencias4.320
1.81GHz
18.2dB
28V
-
-
800mA
72W
65V
NI-780
NI-780
MRFG35003NR5
NXP

FET RF 15V 3.55GHZ

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 11.5dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 55mA
  • Power - Output: 3W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
Paquete: PLD-1.5
En existencias2.480
3.55GHz
11.5dB
12V
-
-
55mA
3W
15V
PLD-1.5
PLD-1.5
2N5486G
ON Semiconductor

JFET N-CH 25V 30MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 30mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias2.560
-
-
-
30mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF998,235
NXP

MOSFET N-CH 12V 30MA SOT143

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 30mA
  • Noise Figure: 0.6dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
Paquete: TO-253-4, TO-253AA
En existencias3.360
200MHz
-
8V
30mA
0.6dB
10mA
-
12V
TO-253-4, TO-253AA
SOT-143B
BLF2043,112
Ampleon USA Inc.

RF FET LDMOS 75V 12.5DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 12.5dB
  • Voltage - Test: 26V
  • Current Rating: 2.2A
  • Noise Figure: -
  • Current - Test: 85mA
  • Power - Output: 10W
  • Voltage - Rated: 75V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
Paquete: SOT467C
En existencias7.840
2GHz
12.5dB
26V
2.2A
-
85mA
10W
75V
SOT467C
SOT467C
hot MRF8P29300HSR6
NXP

FET RF 2CH 65V 2.9GHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.9GHz
  • Gain: 13.3dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 320W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
Paquete: NI-1230S
En existencias7.408
2.9GHz
13.3dB
30V
-
-
100mA
320W
65V
NI-1230S
NI-1230S
BLF8G22LS-270U
Ampleon USA Inc.

RF FET LDMOS 65V 17.7DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.4A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
Paquete: SOT-502B
En existencias2.432
2.11GHz ~ 2.17GHz
17.7dB
28V
-
-
2.4A
80W
65V
SOT-502B
SOT502B
LET9120
STMicroelectronics

MOSFET N-CH 80V 18A M-246

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 18dB
  • Voltage - Test: 32V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 150W
  • Voltage - Rated: 80V
  • Package / Case: M246
  • Supplier Device Package: M246
Paquete: M246
En existencias5.264
860MHz
18dB
32V
18A
-
400mA
150W
80V
M246
M246
MMRF1314HR5
NXP

TRANS 960-1215MHZ 1000W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
Paquete: SOT-979A
En existencias7.552
1.4GHz
17.7dB
50V
-
-
100mA
1000W
105V
SOT-979A
NI-1230-4H
BLS7G2729LS-350P,1
Ampleon USA Inc.

RF FET LDMOS 65V 13DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 13dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 350W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
Paquete: SOT539B
En existencias4.624
2.7GHz ~ 2.9GHz
13dB
32V
-
-
200mA
350W
65V
SOT539B
SOT539B
hot MRF166C
M/A-Com Technology Solutions

FET RF 65V 500MHZ 319-07

  • Transistor Type: N-Channel
  • Frequency: 30MHz ~ 500MHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: 319-07
  • Supplier Device Package: 319-07, Style 3
Paquete: 319-07
En existencias5.392
30MHz ~ 500MHz
16dB
28V
4A
-
25mA
20W
65V
319-07
319-07, Style 3
150-101N09A-00
IXYS

RF MOSFET N-CHANNEL DE150

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 25µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 100V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
Paquete: 6-SMD, Flat Lead Exposed Pad
En existencias7.536
100MHz
-
-
25µA
-
-
200W
100V
6-SMD, Flat Lead Exposed Pad
DE150
BLF7G10LS-250,118
Ampleon USA Inc.

RF FET LDMOS 65V 19.5DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
Paquete: SOT-502B
En existencias6.304
920MHz ~ 960MHz
19.5dB
30V
-
-
1.8A
60W
65V
SOT-502B
SOT502B
BLA6H0912L-1000U
Ampleon USA Inc.

RF FET LDMOS 100V 15.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.03GHz
  • Gain: 15.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 1000W
  • Voltage - Rated: 100V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
Paquete: SOT539A
En existencias4.128
1.03GHz
15.5dB
50V
-
-
200mA
1000W
100V
SOT539A
SOT539A
VRF2933
Microsemi Corporation

MOSFET RF PWR N-CH 50V 300W M177

  • Transistor Type: N-Channel
  • Frequency: 150MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: 2mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 300W
  • Voltage - Rated: 170V
  • Package / Case: M177
  • Supplier Device Package: M177
Paquete: M177
En existencias7.920
150MHz
25dB
50V
2mA
-
250mA
300W
170V
M177
M177
CGHV1J070D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

  • Transistor Type: HEMT
  • Frequency: 18GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360mA
  • Power - Output: 70W
  • Voltage - Rated: 100V
  • Package / Case: Die
  • Supplier Device Package: Die
Paquete: Die
En existencias8.340
18GHz
17dB
40V
-
-
360mA
70W
100V
Die
Die
CLF1G0060-30
Ampleon USA Inc.

RF MOSFET GAN HEMT 50V CDFM2

  • Transistor Type: GaN HEMT
  • Frequency: 3GHz ~ 3.5GHz
  • Gain: 13dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 30W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1227A
  • Supplier Device Package: CDFM2
Paquete: -
Request a Quote
3GHz ~ 3.5GHz
13dB
50 V
-
-
70 mA
30W
150 V
SOT-1227A
CDFM2
BB502MBS-TR-E
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
C4H18W500AY
Ampleon USA Inc.

RF MOSFET 48V SOT1273-1

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 1.8GHz ~ 2GHz
  • Gain: 14.6dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350 mA
  • Power - Output: 500W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1273-1
  • Supplier Device Package: SOT1273-1
Paquete: -
En existencias180
1.8GHz ~ 2GHz
14.6dB
48 V
-
-
350 mA
500W
150 V
SOT-1273-1
SOT1273-1
GTVA123501FA-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 20dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 350W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
Paquete: -
En existencias213
1.2GHz ~ 1.4GHz
20dB
50 V
-
-
100 mA
350W
125 V
H-37265J-2
H-37265J-2
PTFB241402F-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 17dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 110W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
Paquete: -
Request a Quote
2.4GHz
17dB
30 V
-
-
120 mA
110W
65 V
H-37248-4
H-37248-4