Página 93 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  93/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO6601_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paquete: SC-74, SOT-457
En existencias7.984
Logic Level Gate
30V
3.4A, 2.3A
60 mOhm @ 3.4A, 10V
1.5V @ 250µA
12nC @ 10V
285pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
VQ1001P-E3
Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
Paquete: -
En existencias2.672
Logic Level Gate
30V
830mA
1.75 Ohm @ 200mA, 5V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot AO8804
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias74.952
Logic Level Gate
20V
-
13 mOhm @ 8A, 10V
1V @ 250µA
17.9nC @ 4.5V
1810pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
FDMJ1032C
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 3.2A/2.5A SC75

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A, 2.5A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: SC-75, MicroFET
Paquete: 6-WFDFN Exposed Pad
En existencias5.984
Logic Level Gate
20V
3.2A, 2.5A
90 mOhm @ 3.2A, 4.5V
1.5V @ 250µA
3nC @ 4.5V
270pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
SC-75, MicroFET
hot USB10H
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias393.288
Logic Level Gate
20V
1.9A
170 mOhm @ 1.9A, 4.5V
1.5V @ 250µA
4.2nC @ 4.5V
441pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
GWM120-0075P3-SL
IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 118A
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
Paquete: 17-SMD, Flat Leads
En existencias4.352
Standard
75V
118A
5.5 mOhm @ 60A, 10V
4V @ 1mA
100nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
SI7236DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 60A PWRPAK 8-SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
  • Power - Max: 46W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paquete: PowerPAK? SO-8 Dual
En existencias4.240
Standard
20V
60A
5.2 mOhm @ 20.7A, 4.5V
1.5V @ 250µA
105nC @ 10V
4000pF @ 10V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
NTLLD4901NFTWG
ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
  • Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
  • Power - Max: 800mW, 810mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WDFN (3x3)
Paquete: 8-PowerWDFN
En existencias3.456
Logic Level Gate
30V
5.5A, 6.3A
17.4 mOhm @ 9A, 10V
2.2V @ 250µA
12nC @ 10V
605pF @ 15V
800mW, 810mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WDFN (3x3)
hot SI4276DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Power - Max: 3.6W, 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias9.396
Logic Level Gate
30V
8A
15.3 mOhm @ 9.5A, 10V
2.5V @ 250µA
26nC @ 10V
1000pF @ 15V
3.6W, 2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ZXMN2088DE6TA
Diodes Incorporated

MOSFET 2N-CH 20V 1.7A SOT-26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 279pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paquete: SOT-23-6
En existencias733.356
Logic Level Gate
20V
1.7A
200 mOhm @ 1A, 4.5V
1V @ 250µA
3.8nC @ 4.5V
279pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
hot CSD87384M
Texas Instruments

MOSFET 2N-CH 30V 30A 5PTAB

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-LGA
  • Supplier Device Package: 5-PTAB (5x3.5)
Paquete: 5-LGA
En existencias5.808
Logic Level Gate
30V
30A
7.7 mOhm @ 25A, 8V
1.9V @ 250µA
9.2nC @ 4.5V
1150pF @ 15V
8W
-55°C ~ 150°C (TJ)
Surface Mount
5-LGA
5-PTAB (5x3.5)
NX3008NBKSH
Nexperia USA Inc.

NX3008NBKS/SC-88/REEL 7" Q3/T4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 445mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias5.824
Standard
30V
350mA (Ta)
1.4 Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
445mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
SQ4961EY-T1_GE3
Vishay Siliconix

MOSFET DUAL P-CHAN 60V SO8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power - Max: 3.3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.840
Standard
60V
4.4A (Tc)
85 mOhm @ 3.5A, 10V
2.5V @ 250µA
40nC @ 10V
1140pF @ 25V
3.3W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDMS3660AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/30A 8QFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 30A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
Paquete: 8-PowerTDFN
En existencias5.040
Logic Level Gate
30V
13A, 30A
8 mOhm @ 13A, 10V
2.7V @ 250µA
30nC @ 10V
2230pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
IRF7324PBF
Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias32.034
Logic Level Gate
20V
9A
18 mOhm @ 9A, 4.5V
1V @ 250µA
63nC @ 5V
2940pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF9358PBF
Infineon Technologies

MOSFET 2P-CH 30V 9.2A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias22.560
Logic Level Gate
30V
9.2A
16.3 mOhm @ 9.2A, 10V
2.4V @ 25µA
38nC @ 10V
1740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRL6372TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 8.1A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A
  • Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 8.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias33.840
Logic Level Gate
30V
8.1A
17.9 mOhm @ 8.1A, 4.5V
1.1V @ 10µA
11nC @ 4.5V
1020pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDMA6023PZT
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.6A 6MICROFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
Paquete: 6-UDFN Exposed Pad
En existencias13.428
Logic Level Gate
20V
3.6A
60 mOhm @ 3.6A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
885pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-MicroFET (2x2)
hot UM6K1NTN
Rohm Semiconductor

MOSFET 2N-CH 30V .1A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias3.766.380
Logic Level Gate
30V
100mA
8 Ohm @ 10mA, 4V
1.5V @ 100µA
-
13pF @ 5V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
FF17MR12W1M1HPB11BPSA1
Infineon Technologies

SIC 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
Paquete: -
En existencias84
-
1200V (1.2kV)
-
-
-
-
-
-
-
Chassis Mount
Module
AG-EASY1B
FDZ1827NZ
Fairchild Semiconductor

MOSFET 2N-CH 20V 10A 6WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WLCSP (1.3x2.3)
Paquete: -
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-
20V
10A (Ta)
13mOhm @ 1A, 4.5V
1.2V @ 250µA
24nC @ 10V
2055pF @ 10V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFBGA, WLCSP
6-WLCSP (1.3x2.3)
EFC2K103NUZTDG
onsemi

MOSFET 2N-CH 12V 40A 10WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.3W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-WLCSP (3.54x1.77)
Paquete: -
En existencias288
Logic Level Gate, 2.5V Drive
12V
40A (Ta)
1.8mOhm @ 5A, 4.5V
1.3V @ 1mA
62nC @ 6V
-
3.3W (Ta)
150°C (TJ)
Surface Mount
10-SMD, No Lead
10-WLCSP (3.54x1.77)
AONY36304
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 20A/51A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (5x6)
Paquete: -
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-
30V
20A (Ta), 51A (Tc), 26A (Ta), 83A (Tc)
5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
30nC @ 10V, 40nC @ 10V
1000pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 31.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
RF3S49092SM9A
Fairchild Semiconductor

MOSFET N/P-CH 12V 20A TO263-5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 10A (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V, 775pF @ 10V
  • Power - Max: 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
Paquete: -
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Logic Level Gate
12V
20A (Tc), 10A (Tc)
60mOhm @ 20A, 5V, 140mOhm @ 10A, 5V
1V @ 250µA
25nC @ 10V, 24nC @ 10V
750pF @ 10V, 775pF @ 10V
50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
TO-263-5
TSM8588CS
Taiwan Semiconductor Corporation

MOSFET N/P-CH 60V 2.5A/5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V
  • Power - Max: 1.4W (Ta), 5.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
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-
60V
2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
2.5V @ 250µA
9.4nC @ 10V, 9nC @ 10V
527pF @ 30V, 436pF @ 30V
1.4W (Ta), 5.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FW257-TL-E-ON
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM120HRM163AG
Microchip Technology

SIC 4N-CH 1200V/700V 173A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V
  • Power - Max: 745W (Tc), 365W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1200V (1.2kV), 700V
173A (Tc), 124A (Tc)
16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
2.8V @ 6mA, 2.4V @ 4mA
464nC, 215nC @ 20V
6040pF @ 1000V, 4500pF @ 700V
745W (Tc), 365W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
UPA679TB-T1-A
Renesas Electronics Corporation

MOSFET N/P-CH 20V SC-70 6SSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA, 250mA
  • Rds On (Max) @ Id, Vgs: 570mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 10V
  • Power - Max: 200mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88
Paquete: -
Request a Quote
Logic Level Gate
20V
350mA, 250mA
570mOhm @ 300mA, 4.5V
-
-
28pF @ 10V
200mW
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88