Página 81 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  81/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF5850TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 960mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias72.756
Logic Level Gate
20V
2.2A
135 mOhm @ 2.2A, 4.5V
1.2V @ 250µA
5.4nC @ 4.5V
320pF @ 15V
960mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot IRF7379PBF
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias254.172
Standard
30V
5.8A, 4.3A
45 mOhm @ 5.8A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7901D1
Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias274.680
Logic Level Gate
30V
6.2A
38 mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDY2001PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.15A SOT-563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 150mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
Paquete: SOT-563, SOT-666
En existencias3.104
Logic Level Gate
20V
150mA
8 Ohm @ 150mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
100pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
GWM120-0075P3
IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 118A
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL?
  • Supplier Device Package: ISOPLUS-DIL?
Paquete: ISOPLUS-DIL?
En existencias5.376
Standard
75V
118A
5.5 mOhm @ 60A, 10V
4V @ 1mA
100nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL?
ISOPLUS-DIL?
hot NDM3000
Fairchild/ON Semiconductor

MOSFET 3N/3P-CH 30V 3A SO16

  • FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paquete: 16-SOIC (0.154", 3.90mm Width)
En existencias211.392
Logic Level Gate
30V
3A
90 mOhm @ 3A, 10V
3V @ 250µA
25nC @ 10V
360pF @ 10V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
APTMC120AM12CT3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 220A SP3F

  • FET Type: 2 N Channel (Phase Leg)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 220A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
  • Power - Max: 925W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias5.568
Standard
1200V (1.2kV)
220A
12 mOhm @ 150A, 20V
2.4V @ 30mA (Typ)
483nC @ 20V
8400pF @ 1000V
925W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
DMNH6022SSD-13
Diodes Incorporated

MOSFET 2NCH 60V 7.1A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.536
Standard
60V
7.1A, 22.6A
27 mOhm @ 5A, 10V
3V @ 250µA
32nC @ 10V
2127pF @ 25V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UT6K3TCR
Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
Paquete: 6-UDFN Exposed Pad
En existencias4.688
-
30V
5.5A
42 mOhm @ 5A, 4.5V
1.5V @ 1mA
4nC @ 4.5V
450pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
ALD310704ASCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 380mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paquete: 16-SOIC (0.154", 3.90mm Width)
En existencias6.864
Standard
8V
-
-
380mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
SIA923AEDJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paquete: PowerPAK? SC-70-6 Dual
En existencias3.440
Logic Level Gate
20V
4.5A
54 mOhm @ 3.8A, 4.5V
900mV @ 250µA
25nC @ 8V
770pF @ 10V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
DMN3016LDN-7
Diodes Incorporated

MOSFET 2N-CH 30V 7.3A 8VDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: V-DFN3030-8 (Type J)
Paquete: 8-PowerWDFN
En existencias4.608
Logic Level Gate
30V
7.3A
20 mOhm @ 11A, 10V
2V @ 250µA
25.1nC @ 10V
1415pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
V-DFN3030-8 (Type J)
hot DMN63D8LDW-7
Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias88.800
Logic Level Gate
30V
220mA
2.8 Ohm @ 250mA, 10V
1.5V @ 250µA
870nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NTMFD2D4N03P8
onsemi

MOSFET 2N-CH 30V 17A/56A 8PQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V
  • Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PQFN (5x6)
Paquete: -
En existencias18.000
-
30V
17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
3V @ 250µA, 3V @ 1mA
24nC @ 10V, 55nC @ 10V
1715pF @ 15V, 3825pF @ 15V
1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PQFN (5x6)
PJQ5866A-AU_R2_000A1
Panjit International Inc.

MOSFET 2N-CH 60V 7A/40A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
  • Power - Max: 2W (Ta), 68.2W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
Paquete: -
En existencias16.434
-
60V
7A (Ta), 40A (Tc)
17mOhm @ 20A, 10V
2.5V @ 250µA
13.5nC @ 4.5V
1574pF @ 25V
2W (Ta), 68.2W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
IRF7331TRPBF-1
Infineon Technologies

MOSFET 2N-CH 20V 7A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
Request a Quote
-
20V
7A (Ta)
30mOhm @ 7A, 4.5V
1.2V @ 250µA
20nC @ 4.5V
1340pF @ 16V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UPA2752GR-E2-A
Renesas

MOSFET 2N-CH 30V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 1.7W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
30V
8A (Tc)
23mOhm @ 4A, 10V
2.5V @ 1mA
10nC @ 10V
480pF @ 10V
1.7W (Ta)
150°C
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
DMP2045UFDB-7
Diodes Incorporated

MOSFET 2P-CH 20V 3.1A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V
  • Power - Max: 740mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: -
Request a Quote
-
20V
3.1A (Ta)
90mOhm @ 4A, 4.5V
1V @ 250µA
6.8nC @ 4.5V
634pF @ 10V
740mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
UPA503T-T1-A
Renesas Electronics Corporation

MOSFET 2P-CH 50V 0.1A SC59-5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SC-59-5, Mini Mold
Paquete: -
Request a Quote
-
50V
100mA
60Ohm @ 10mA, 10V
2.5V @ 1µA
-
17pF @ 5V
300mW
-
Surface Mount
SC-74A, SOT-753
SC-59-5, Mini Mold
DMT6017LDV-7
Diodes Incorporated

MOSFET 2N-CH 25.3 POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
Paquete: -
Request a Quote
-
-
25.3 (Tc)
22mOhm @ 6A, 10V
2.3V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
BSO615NGHUMA1
Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8DSO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
Paquete: -
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Logic Level Gate
60V
2.6A
150mOhm @ 2.6A, 4.5V
2V @ 20µA
20nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
PJL9812_R2_00001
Panjit International Inc.

MOSFET 2N-CH 30V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
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-
30V
6A (Ta)
35mOhm @ 6A, 10V
1.3V @ 250µA
5.1nC @ 4.5V
421pF @ 15V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CAB008M12GM3T
Wolfspeed, Inc.

SIC 2N-CH 1200V 146A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 146A (Tj)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 46mA
  • Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
En existencias3
-
1200V (1.2kV)
146A (Tj)
10.4mOhm @ 150A, 15V
3.6V @ 46mA
472nC @ 15V
13600pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
UT6ME5TCR
Rohm Semiconductor

MOSFET N/P-CH 100V 2A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
Paquete: -
En existencias9.870
-
100V
2A (Ta), 1A (Ta)
207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
2.5V @ 1mA
2.8nC @ 10V, 6.7nC @ 10V
90pF @ 50V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
NXH011T120M3F2PTHG
onsemi

11M 1200V 40A M3S SIC TNPC MODUL

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V
  • Power - Max: 272W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 29-PIM (56.7x42.5)
Paquete: -
En existencias51
-
1200V (1.2kV)
91A (Tc)
16mOhm @ 70A, 18V
4.4V @ 40mA
306nC @ 20V
6331pF @ 800V
272W (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
29-PIM (56.7x42.5)
TSM5055DCR
Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 107A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V
  • Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
Paquete: -
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-
30V
10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
2.5V @ 250µA
9.3nC @ 10V, 49nC @ 10V
555pF @ 15V, 2550pF @ 15V
2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
TPC8227-H-LQ
Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
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-
40V
5.1A
33mOhm @ 2.6A, 10V
2.3V @ 100µA
10nC @ 10V
640pF @ 10V
1.5W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CBB032M12FM3
Wolfspeed, Inc.

SIC 4N-CH 1200V 40A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
  • Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
En existencias21
-
1200V (1.2kV)
40A (Tj)
42.6mOhm @ 30A, 15V
3.6V @ 11.5mA
118nC @ 15V
3400pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-