Página 58 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  58/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SI4562DY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias706.836
Logic Level Gate
20V
-
25 mOhm @ 7.1A, 4.5V
1.6V @ 250µA
50nC @ 4.5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO6804
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 6TSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paquete: SC-74, SOT-457
En existencias267.288
Logic Level Gate
20V
4A
32 mOhm @ 5A, 4.5V
1.2V @ 250µA
7.7nC @ 4.5V
725pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
SI5943DU-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 6A 8PWRPAK

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
  • Power - Max: 8.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
Paquete: PowerPAK? ChipFET? Dual
En existencias2.032
Logic Level Gate
12V
6A
64 mOhm @ 3.6A, 4.5V
1V @ 250µA
15nC @ 8V
460pF @ 6V
8.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot ZXMN6A09DN8TC
Diodes Incorporated

MOSFET 2N-CH 60V 4.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias372.300
Logic Level Gate
60V
4.3A
40 mOhm @ 8.2A, 10V
3V @ 250µA
24.2nC @ 5V
1407pF @ 40V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
APTMC120TAM17CTPAG
Microsemi Corporation

MOSFET 6N-CH 1200V 147A SP6P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 147A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V
  • Power - Max: 625W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias6.352
Standard
1200V (1.2kV)
147A
17 mOhm @ 100A, 20V
2.4V @ 20mA (Typ)
322nC @ 20V
5600pF @ 1000V
625W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
hot AO4832
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 10A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias334.080
Logic Level Gate
30V
10A
13 mOhm @ 10A, 10V
2.5V @ 250µA
17nC @ 10V
910pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIRB40DP-T1-GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 40A SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
  • Power - Max: 46.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
Paquete: PowerPAK? SO-8 Dual
En existencias3.296
Standard
40V
40A (Tc)
3.25 mOhm @ 10A, 10V
2.4V @ 250µA
45nC @ 4.5V
4290pF @ 20V
46.2W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot DMP2035UTS-13
Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

  • FET Type: 2 P-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.04A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
  • Power - Max: 890mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias6.592
Logic Level Gate
20V
6.04A
35 mOhm @ 4A, 4.5V
1V @ 250µA
15.4nC @ 4.5V
1610pF @ 10V
890mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MCCD2004-TP
Micro Commercial Co

MOSFET 2N-CH 20V 10A

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1955pF @ 10V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: DFN2030-6
Paquete: 6-WFDFN Exposed Pad
En existencias3.856
Standard
20V
10A
10 mOhm @ 8A, 10V
1V @ 250µA
18.5nC @ 4.5V
1955pF @ 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
DFN2030-6
hot 2N7002VA
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.28A SOT563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563F
Paquete: SOT-563, SOT-666
En existencias576.000
Logic Level Gate
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563F
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.17A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias58.848
Standard
60V
170mA
3.9 Ohm @ 100mA, 10V
2.1V @ 250µA
0.35nC @ 4.5V
17pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
hot ZXMC3A16DN8TA
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias457.956
Logic Level Gate
30V
4.9A, 4.1A
35 mOhm @ 9A, 10V
1V @ 250µA (Min)
17.5nC @ 10V
796pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
PJT7807_R1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
20V
500mA (Ta)
1.2Ohm @ 500mA, 4.5V
1V @ 250µA
1.4nC @ 4.5V
38pF @ 10V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SP8M4TB
Rohm Semiconductor

MOSFET 30V 9A/7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7A
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
30V
9A, 7A
18mOhm @ 9A, 10V
2.5V @ 1mA
21nC @ 5V
1190pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HT8KC6TB1
Rohm Semiconductor

60V 15A, DUAL NCH+NCH, HSMT8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 2W (Ta), 14W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-HSMT (3.2x3)
Paquete: -
Request a Quote
-
60V
6.5A (Ta), 15A (Tc)
29mOhm @ 6.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
2W (Ta), 14W (Tc)
150°C (TJ)
Surface Mount
8-PowerVDFN
8-HSMT (3.2x3)
DMN3270UVT-13
Diodes Incorporated

MOSFET 2N-CH 30V 1.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
  • Power - Max: 760mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
Paquete: -
Request a Quote
-
30V
1.6A (Ta)
270mOhm @ 650mA, 4.5V
900mV @ 40µA
3.07nC @ 4.5V
161pF @ 15V
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
NXH040P120MNF1PTG
onsemi

SIC 2N-CH 1200V 30A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
  • Power - Max: 74W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1200V (1.2kV)
30A (Tc)
56mOhm @ 25A, 20V
4.3V @ 10mA
122.1nC @ 20V
1505pF @ 800V
74W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
AONE36132
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 17A/60A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 12.5V, 3215pF @ 12.5V
  • Power - Max: 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN-EP (3.3x3.3)
Paquete: -
Request a Quote
-
25V
17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc)
4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V
1.8V @ 250µA
21nC @ 10V, 80nC @ 10V
880pF @ 12.5V, 3215pF @ 12.5V
2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN-EP (3.3x3.3)
CMSBN4612-HF
Comchip Technology

MOSFET 2N-CH 22V 6A 4CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 22V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: CSPB1313-4
Paquete: -
Request a Quote
-
22V
6A (Ta)
36mOhm @ 3A, 4.5V
1.3V @ 250µA
7.2nC @ 10V
-
1.4W (Ta)
150°C
Surface Mount
4-SMD, No Lead
CSPB1313-4
UPA2350T1G-1-E4-A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
NTMFD5875NLT1G
onsemi

MOSFET 2N-CH 60V 7A/22A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W (Ta), 32W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Paquete: -
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Logic Level Gate
60V
7A (Ta), 22A (Tc)
33mOhm @ 7.5A, 10V
3V @ 250µA
5.9nC @ 4.5V
540pF @ 25V
3.2W (Ta), 32W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
BSS84DWQ-13
Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
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-
50V
130mA (Ta)
10Ohm @ 100mA, 5V
2V @ 1mA
-
45pF @ 25V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DI038N04PQ2
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
  • Power - Max: 21W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: TDSON-8-4
Paquete: -
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-
45V
38A (Tc)
13.5mOhm @ 10A, 10V
2.5V @ 250µA
14nC @ 10V
830pF @ 30V
21W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
TDSON-8-4
DMN62D4LDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 330mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
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-
60V
261mA (Ta)
3Ohm @ 200mA, 10V
2V @ 250µA
1.04nC @ 10V
41pF @ 30V
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SIS9634LDN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6A PPAK 1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
  • Power - Max: 2.5W (Ta), 17.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
Paquete: -
En existencias35.490
-
60V
6A (Ta), 6A (Tc)
31mOhm @ 5A, 10V
3V @ 250µA
11nC @ 10V
420pF @ 30V
2.5W (Ta), 17.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
PJQ5606_R2_00001
Panjit International Inc.

MOSFET N/P-CH 30V 7A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
  • Power - Max: 1.7W (Ta), 21W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
Paquete: -
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-
30V
7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
2.5V @ 250µA
4.8nC @ 4.5V, 7.8nC @ 4.5V
429pF @ 25V, 846pF @ 15V
1.7W (Ta), 21W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
SQJ912AEP-T2_BE3
Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
Paquete: -
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-
40V
30A (Tc)
9.3mOhm @ 9.7A, 10V
2.5V @ 250µA
38nC @ 10V
1835pF @ 20V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
FF17MR12W1M1HB70BPSA1
Infineon Technologies

SIC 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
Paquete: -
En existencias63
-
1200V (1.2kV)
-
-
-
-
-
-
-
Chassis Mount
Module
AG-EASY1B