Página 52 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  52/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO6604L_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V 6-TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.5A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paquete: SC-74, SOT-457
En existencias3.840
Logic Level Gate
20V
3.4A, 2.5A
60 mOhm @ 3.4A, 4.5V
1V @ 250µA
3.8nC @ 4.5V
320pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
FDS6898A_NF40
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.648
Logic Level Gate
20V
9.4A
14 mOhm @ 9.4A, 4.5V
1.5V @ 250µA
23nC @ 4.5V
1821pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM10DUM05TG
Microsemi Corporation

MOSFET 2N-CH 100V 278A SP4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 278A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias7.296
Standard
100V
278A
5 mOhm @ 125A, 10V
4V @ 5mA
700nC @ 10V
20000pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot FDW2501NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias1.439.760
Logic Level Gate
20V
5.5A
18 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
1286pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDM2509NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 8.7A 2X5MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x5)
Paquete: 6-WFDFN Exposed Pad
En existencias104.400
Logic Level Gate
20V
8.7A
18 mOhm @ 8.7A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
1200pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-MicroFET (2x5)
IPG20N06S2L50AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 19µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 51W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
Paquete: 8-PowerVDFN
En existencias7.376
Logic Level Gate
55V
20A
50 mOhm @ 15A, 10V
2V @ 19µA
17nC @ 10V
560pF @ 25V
51W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
ALD114904PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Depletion Mode
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
  • Vgs(th) (Max) @ Id: 360mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paquete: 8-DIP (0.300", 7.62mm)
En existencias3.984
Depletion Mode
10.6V
12mA, 3mA
500 Ohm @ 3.6V
360mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot PMDT290UCE,115
Nexperia USA Inc.

MOSFET N/P-CH 20V SOT666

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
Paquete: SOT-563, SOT-666
En existencias162.720
Logic Level Gate
20V
800mA, 550mA
380 mOhm @ 500mA, 4.5V
950mV @ 250µA
0.68nC @ 4.5V
83pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
2N7002PV,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.35A SOT-666

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
Paquete: SOT-563, SOT-666
En existencias2.192
Logic Level Gate
60V
350mA
1.6 Ohm @ 500mA, 10V
2.4V @ 250µA
0.8nC @ 4.5V
50pF @ 10V
330mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
QS8M51TR
Rohm Semiconductor

MOSFET N/P-CH 100V 2A/1.5A TSMT8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
  • Rds On (Max) @ Id, Vgs: 325 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Paquete: 8-SMD, Flat Lead
En existencias2.352
Logic Level Gate
100V
2A, 1.5A
325 mOhm @ 2A, 10V
2.5V @ 1mA
4.7nC @ 5V
290pF @ 25V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot STS10DN3LH5
STMicroelectronics

MOSFET 2N-CH 30V 10A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias71.088
Logic Level Gate
30V
10A
21 mOhm @ 5A, 10V
1V @ 250µA
4.6nC @ 5V
475pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDG6301N
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.22A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias5.998.320
Logic Level Gate
25V
220mA
4 Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
AON7804_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A/22A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 3.1W (Ta), 17W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (3x3)
Paquete: -
Request a Quote
-
30V
9A (Ta), 22A (Tc)
21mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
3.1W (Ta), 17W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (3x3)
EMH2603-TL-E
onsemi

PCH+NCH 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UHB50SC12E1BC3N
Qorvo

1200V/50A,SIC,HALF-BRIDGE,G3,E1B

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CMXDM7002A-BK-PBFREE
Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.592nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
Paquete: -
Request a Quote
-
60V
280mA (Ta)
2Ohm @ 500mA, 10V
2.5V @ 250µA
0.592nC @ 4.5V
50pF @ 25V
350mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
MSCSM120TLM08CAG
Microchip Technology

SIC 4N-CH 1200V 333A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
  • Power - Max: 1378W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
Paquete: -
En existencias15
-
1200V (1.2kV)
333A (Tc)
7.8mOhm @ 80A, 20V
2.8V @ 4mA
928nC @ 20V
12000pF @ 1000V
1378W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
CAB011M12FM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 105A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 105A
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 35mA
  • Gate Charge (Qg) (Max) @ Vgs: 324nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
En existencias15
-
1200V (1.2kV)
105A
14mOhm @ 100A, 15V
3.6V @ 35mA
324nC @ 15V
10300pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
MSCSM70TLM07CAG
Microchip Technology

SIC 4N-CH 700V 349A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 966W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
Paquete: -
En existencias12
-
700V
349A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
966W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
MSCSM120TAM31T3AG
Microchip Technology

SIC 6N-CH 1200V 89A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
  • Power - Max: 395W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1200V (1.2kV)
89A (Tc)
31mOhm @ 40A, 20V
2.8V @ 3mA
232nC @ 20V
3020pF @ 1000V
395W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
UPA2350T1G-2-E4-A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UPA1874BGR-9JG-E1-A
Renesas Electronics Corporation

MOSFET 2N-CH 30V 8A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: -
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Logic Level Gate
30V
8A
14mOhm @ 4A, 4.5V
1.5V @ 1mA
10nC @ 4V
930pF @ 10V
2W
-
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMP22D5UDJ
Diodes Incorporated

MOSFET 2P-CH 20V 0.36A SOT963

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
Paquete: -
Request a Quote
-
20V
360mA (Ta)
1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.3nC @ 4.5V
17pF @ 15V
380mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
AOC3860C
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 25A 6ALPHADFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-AlphaDFN (3.05x1.77)
Paquete: -
En existencias23.970
-
12V
25A (Ta)
3.5mOhm @ 5A, 4.5V
1.1V @ 250µA
36nC @ 4.5V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
6-AlphaDFN (3.05x1.77)
SSF2116
Good-Ark Semiconductor

MOSFET N/P-CH 20V 3.8A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 1.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
Paquete: -
En existencias32.760
-
20V
3.8A (Tc), 2.5A (Tc)
40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
1V @ 250µA
10nC @ 4.5V
600pF @ 15V
1.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
MSCSM170TAM45CT3AG
Microchip Technology

SIC 6N-CH 1700V 64A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
  • Power - Max: 319W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1700V (1.7kV)
64A (Tc)
45mOhm @ 30A, 20V
3.2V @ 2.5mA
178nC @ 20V
3300pF @ 1000V
319W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SQJQ910EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 100V 70A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
  • Power - Max: 187W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
Paquete: -
En existencias5.970
-
100V
70A (Tc)
8.6mOhm @ 10A, 10V
2.5V @ 250µA
58nC @ 10V
2832pF @ 50V
187W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
DMG1029SVQ-7
Diodes Incorporated

MOSFET N/P-CH 60V 0.5A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
  • Power - Max: 450mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
En existencias9.000
-
60V
500mA (Ta), 360mA (Ta)
1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
2.5V @ 250µA, 3V @ 250µA
0.3nC @ 4.5V, 0.28nC @ 4.5V
30pF @ 25V, 25pF @ 25V
450mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563