Página 48 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  48/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7901D1TR
Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias63.732
Logic Level Gate
30V
6.2A
38 mOhm @ 5A, 4.5V
1V @ 250µA
10.5nC @ 5V
780pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
UPA2670T1R-E2-AX
Renesas Electronics America

MOSFET 2P-CH 20V 3A 6HUSON

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 79 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 473pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
Paquete: 6-WFDFN Exposed Pad
En existencias5.232
Logic Level Gate, 1.8V Drive
20V
3A
79 mOhm @ 1.5A, 4.5V
-
5.1nC @ 4.5V
473pF @ 10V
2.3W
150°C (TJ)
Surface Mount
6-WFDFN Exposed Pad
6-HUSON (2x2)
SI4544DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.856
Logic Level Gate
30V
-
35 mOhm @ 6.5A, 10V
1V @ 250µA (Min)
35nC @ 10V
-
2.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6993DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 3.6A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias85.908
Logic Level Gate
30V
3.6A
31 mOhm @ 4.7A, 10V
3V @ 250µA
20nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI9934BDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 4.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias456.828
Logic Level Gate
12V
4.8A
35 mOhm @ 6.4A, 4.5V
1.4V @ 250µA
20nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTQD6866R2G
ON Semiconductor

MOSFET 2N-CH 20V 4.7A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
  • Power - Max: 940mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias6.256
Logic Level Gate
20V
4.7A
32 mOhm @ 6.9A, 4.5V
1.2V @ 250µA
22nC @ 4.5V
1400pF @ 16V
940mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
STS3C2F100
STMicroelectronics

MOSFET N/P-CH 100V 3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.360
Logic Level Gate
100V
3A
145 mOhm @ 1.5A, 10V
2V @ 250µA
20nC @ 10V
460pF @ 25V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
VMK165-007T
IXYS

MOSFET 2N-CH 70V 165A TO-240AA

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 165A
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 82.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
  • Supplier Device Package: TO-240AA
Paquete: TO-240AA
En existencias3.216
Standard
70V
165A
7 mOhm @ 82.5A, 10V
4V @ 8mA
480nC @ 10V
8800pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
TO-240AA
TO-240AA
ALD210814PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
Paquete: 16-DIP (0.300", 7.62mm)
En existencias5.008
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
-
-
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
SP8M4FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias2.128
Logic Level Gate
30V
9A, 7A
18 mOhm @ 9A, 10V
2.5V @ 1mA
21nC @ 5V
1190pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot DMP2004DWK-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.43A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 430mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias912.780
Logic Level Gate
20V
430mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
-
175pF @ 16V
250mW
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot AO6601
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.3A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
Paquete: SC-74, SOT-457
En existencias11.386.968
Logic Level Gate
30V
3.4A, 2.3A
60 mOhm @ 3.4A, 10V
1.5V @ 250µA
12nC @ 10V
285pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
BUK9K18-40E,115
Nexperia USA Inc.

MOSFET 2N-CH 40V 30A LFPAK56D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
  • Power - Max: 38W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Paquete: SOT-1205, 8-LFPAK56
En existencias7.312
Logic Level Gate
40V
30A
16 mOhm @ 10A, 10V
2.1V @ 1mA
14.5nC @ 10V
1061pF @ 25V
38W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot 2N7002DW
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.115A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias2.247.348
Logic Level Gate
60V
115mA
7.5 Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot STS9D8NH3LL
STMicroelectronics

MOSFET 2N-CH 30V 8A/9A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 9A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias1.096.416
Logic Level Gate
30V
8A, 9A
22 mOhm @ 4A, 10V
1V @ 250µA
10nC @ 4.5V
857pF @ 25V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
STL40C30H3LL
STMicroelectronics

MOSFET N/P-CH 30V POWERFLAT

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A, 30A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
  • Power - Max: 60W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
Paquete: 8-PowerVDFN
En existencias5.008
Logic Level Gate
30V
40A, 30A
21 mOhm @ 4A, 10V
1V @ 250µA (Min)
4.6nC @ 4.5V
475pF @ 24V
60W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
QH8JA1TCR
Rohm Semiconductor

20V PCH+PCH MIDDLE POWER MOSFET,

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Paquete: 8-SMD, Flat Lead
En existencias23.028
-
30V
5A
38 mOhm @ 5A, 4.5V
1.2V @ 1mA
10.2nC @ 4.5V
720pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot SI4618DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
  • Power - Max: 1.98W, 4.16W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias1.490.928
Standard
30V
8A, 15.2A
17 mOhm @ 8A, 10V
2.5V @ 1mA
44nC @ 10V
1535pF @ 15V
1.98W, 4.16W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQJ951EP-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
  • Power - Max: 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
Paquete: -
En existencias17.205
-
30V
30A (Tc)
17mOhm @ 7.5A, 10V
2.5V @ 250µA
50nC @ 10V
1680pF @ 10V
56W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
DMP31D7LVQ-13
Diodes Incorporated

MOSFET 2P-CH 30V 0.62A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
En existencias30.000
-
30V
620mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
0.8nC @ 10V
19pF @ 15V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
UT6J3TCR1
Rohm Semiconductor

MOSFET 2P-CH 20V 3A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: DFN2020-8D
Paquete: -
En existencias8.922
-
20V
3A (Ta)
85mOhm @ 3A, 4.5V
1V @ 1mA
8.5nC @ 4.5V
2000pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerUDFN
DFN2020-8D
MSCMC170AM08CT6LIAG
Microchip Technology

SIC 2N-CH 1700V 280A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 108mA
  • Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V
  • Power - Max: 1780W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
Paquete: -
Request a Quote
-
1700V (1.7kV)
280A (Tc)
11.7mOhm @ 300A, 20V
4V @ 108mA
1128nC @ 20V
22000pF @ 1000V
1780W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
SP6C LI
94-2518PBF
Infineon Technologies

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
VEC2307-TL-E
onsemi

PCH+PCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
G1K8P06S2
Goford Semiconductor

MOSFET 2P-CH 60V 3.2A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
  • Power - Max: 2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias11.874
-
60V
3.2A (Tc)
170mOhm @ 1A, 10V
2.5V @ 250µA
11.3nC @ 10V
594pF @ 30V
2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TSM2538CQ-RFG
Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 5.5A/10A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
  • Power - Max: 1.89W (Ta), 5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (2x2)
Paquete: -
En existencias35.670
-
20V
5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
800mV @ 250µA
7.5nC @ 4.5V, 9.4nC @ 4.5V
534pF @ 10V, 909pF @ 10V
1.89W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-DFN (2x2)
FAM65CR51XZ1
onsemi

APM16-CDA SF3 650V 51MOHM ALN Y

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4864pF @ 400V
  • Power - Max: 463W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SSIP Exposed Pad, Formed Leads
  • Supplier Device Package: APMCA-A16
Paquete: -
Request a Quote
-
650V
64A (Tc)
51mOhm @ 20A, 10V
5V @ 3.3mA
123nC @ 10V
4864pF @ 400V
463W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
12-SSIP Exposed Pad, Formed Leads
APMCA-A16
UM6K1NA-TPQ2
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
30V
500mA
750mOhm @ 300mA, 10V
1.5V @ 250µA
1.28nC @ 10V
28pF @ 15V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363