Página 195 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  195/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRFH4255DTRPBF
Infineon Technologies

MOSFET 2N-CH 25V 64A/105A PQFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 64A, 105A
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
  • Power - Max: 31W, 38W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PQFN (5x6)
Paquete: 8-PowerVDFN
En existencias5.472
Logic Level Gate
25V
64A, 105A
3.2 mOhm @ 30A, 10V
2.1V @ 35µA
15nC @ 4.5V
1314pF @ 13V
31W, 38W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PQFN (5x6)
hot BSO200N03
Infineon Technologies

MOSFET 2N-CH 30V 6.6A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias636.780
Logic Level Gate
30V
6.6A
20 mOhm @ 7.9A, 10V
2V @ 13µA
8nC @ 5V
1010pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot BSO150N03
Infineon Technologies

MOSFET 2N-CH 30V 7.6A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias667.368
Standard
30V
7.6A
15 mOhm @ 9.1A, 10V
2V @ 25µA
15nC @ 5V
1890pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot BSO612CV
Infineon Technologies

MOSFET N/P-CH 60V 3A/2A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias6.640
Standard
60V
3A, 2A
120 mOhm @ 3A, 10V
4V @ 20µA
15.5nC @ 10V
340pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
AO7600_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH SC70-6

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 900mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias3.904
Standard
20V
900mA
300 mOhm @ 900mA, 4.5V
900mV @ 250µA
1.9nC @ 4.5V
120pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
hot ECH8602M-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 6A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
Paquete: 8-SMD, Flat Lead
En existencias1.008.000
Logic Level Gate
30V
6A
30 mOhm @ 3A, 4.5V
-
7.5nC @ 4.5V
-
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
FD6M043N08
Fairchild/ON Semiconductor

MOSFET 2N-CH 75V 65A EPM15

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: EPM15
  • Supplier Device Package: EPM15
Paquete: EPM15
En existencias7.824
Standard
75V
65A
4.3 mOhm @ 40A, 10V
4V @ 250µA
148nC @ 10V
6180pF @ 25V
-
-40°C ~ 150°C (TJ)
Through Hole
EPM15
EPM15
hot 2N7002V-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: SOT-563, SOT-666
En existencias36.000
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot NDS8947
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias92.136
Logic Level Gate
30V
4A
65 mOhm @ 4A, 10V
2.8V @ 250µA
30nC @ 10V
690pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IPG16N10S4L61AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
  • Power - Max: 29W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
Paquete: 8-PowerVDFN
En existencias3.104
Logic Level Gate
100V
16A
61 mOhm @ 16A, 10V
2.1V @ 90µA
11nC @ 10V
845pF @ 25V
29W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
NVMFD5489NLT3G
ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Paquete: 8-PowerTDFN
En existencias2.992
Logic Level Gate
60V
4.5A
65 mOhm @ 15A, 10V
2.5V @ 250µA
12.4nC @ 10V
330pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
BUK9K5R1-30EX
Nexperia USA Inc.

MOSFET 2N-CH 30V 40A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Paquete: SOT-1205, 8-LFPAK56
En existencias7.904
Logic Level Gate
30V
40A
5.3 mOhm @ 10A, 5V
2.1V @ 1mA
26.7nC @ 5V
3065pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
ALD110814PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
  • Vgs(th) (Max) @ Id: 1.42V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
Paquete: 16-DIP (0.300", 7.62mm)
En existencias6.624
Standard
10.6V
12mA, 3mA
500 Ohm @ 5.4V
1.42V @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
SIA537EDJ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 12V/20V SC-70-6L

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
Paquete: PowerPAK? SC-70-6 Dual
En existencias5.760
Logic Level Gate
12V, 20V
4.5A
28 mOhm @ 5.2A, 4.5V
1V @ 250µA
16nC @ 8V
455pF @ 6V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
BSS138BKS,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 320mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V
  • Power - Max: 445mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias248.130
Logic Level Gate
60V
320mA
1.6 Ohm @ 320mA, 10V
1.6V @ 250µA
0.7nC @ 4.5V
56pF @ 10V
445mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot FDS3890
Fairchild/ON Semiconductor

MOSFET 2N-CH 80V 4.7A 8-SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias243.708
Logic Level Gate
80V
4.7A
44 mOhm @ 4.7A, 10V
4V @ 250µA
35nC @ 10V
1180pF @ 40V
900mW
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
HP8KC7TB1
Rohm Semiconductor

60V 24A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
  • Power - Max: 3W (Ta), 26W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
Paquete: -
En existencias7.410
-
60V
13.5A (Ta), 24A (Tc)
11.5mOhm @ 13.5A, 10V
2.5V @ 1mA
22nC @ 10V
1400pF @ 30V
3W (Ta), 26W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
DMN33D9LV-13A
Diodes Incorporated

MOSFET 2N-CH 30V 0.35A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
  • Power - Max: 430mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
Request a Quote
-
30V
350mA (Ta)
2.4Ohm @ 250mA, 10V
1.4V @ 100µA
1.23nC @ 10V
48pF @ 5V
430mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
PJS6835_S2_00001
Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
Paquete: -
Request a Quote
Logic Level Gate, 1.2V Drive
20V
500mA (Ta)
1.2Ohm @ 500mA, 4.5V
1V @ 250µA
1.4nC @ 4.5V
38pF @ 10V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
SI7844DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.4A PPAK SO-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
Paquete: -
Request a Quote
Logic Level Gate
30V
6.4A
22mOhm @ 10A, 10V
2.4V @ 250µA
20nC @ 10V
-
1.4W
-
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
ZXMD65P03N8TA
Diodes Incorporated

MOSFET 2P-CH 30V 3.8A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: -
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-
30V
3.8A
55mOhm @ 4.9A, 10V
1V @ 250µA
25.7nC @ 10V
930pF @ 25V
1.25W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
QH8JC5TCR
Rohm Semiconductor

MOSFET 2P-CH 60V 3.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
Paquete: -
En existencias14.064
-
60V
3.5A (Ta)
91mOhm @ 3.5A, 10V
2.5V @ 1mA
17.3nC @ 10V
850pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
G100C04D52
Goford Semiconductor

MOSFET 40V 40A/24A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2213pF @ 20V, 2451pF @ 20V
  • Power - Max: 65W (Tc), 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (4.9x5.75)
Paquete: -
Request a Quote
-
40V
40A (Tc), 24A (Tc)
9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V
2.5V @ 250µA
29nC @ 10V, 45nC @ 10V
2213pF @ 20V, 2451pF @ 20V
65W (Tc), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (4.9x5.75)
EMH2402-TL-E
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMG6302UDW-7
Diodes Incorporated

MOSFET 2P-CH 25V 0.15A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 140mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.7pF @ 10V
  • Power - Max: 310mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
25V
150mA (Ta)
10Ohm @ 140mA, 4.5V
1.5V @ 250µA
0.34nC @ 4.5V
30.7pF @ 10V
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SFS9630YDTU
Fairchild Semiconductor

MOSFET P-CH 200V 4.4A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MTC120WX75GD-SMD
IXYS

MOSFET 6N-CH 75V 180A ISOPLUS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL™
  • Supplier Device Package: ISOPLUS-DIL™
Paquete: -
Request a Quote
-
75V
180A (Tc)
3.1mOhm @ 100A, 10V
4V @ 1mA
178nC @ 10V
10500pF @ 25V
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL™
ISOPLUS-DIL™
MSCMC90AM12C3AG
Microchip Technology

SIC 900V 110A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
Paquete: -
Request a Quote
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900V
110A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
SP3F