Página 184 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7754TRPBF	Infineon Technologies	MOSFET 2P-CH 12V 5.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paquete: 8-TSSOP (0.173", 4.40mm Width)	En existencias3.152	Logic Level Gate	12V	5.5A	25 mOhm @ 5.4A, 4.5V	900mV @ 250µA	22nC @ 4.5V	1984pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TMC1620-TO	Trinamic Motion Control GmbH	MOSFET N/P-CH 60V TO252-4 FET Type: N and P-Channel, Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.6A, 4.7A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Power - Max: 3.13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD	En existencias7.808	Standard	60V	6.6A, 4.7A	36 mOhm @ 6A, 10V	3V @ 250µA	19.2nC @ 4.5V	1560pF @ 25V	3.13W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
NTMD5836NLR2G	ON Semiconductor	MOSFET 2N-CH 40V 9A/5.7A SO-8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 5.7A Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias7.552	Logic Level Gate	40V	9A, 5.7A	12 mOhm @ 10A, 10V	3V @ 250µA	50nC @ 10V	2120pF @ 20V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTJD3158CT2G	ON Semiconductor	MOSFET N/P-CH 20V SC88-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias378.300	Logic Level Gate	20V	630mA, 820mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NTHD4401PT3	ON Semiconductor	MOSFET 2P-CH 20V 2.1A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	Paquete: 8-SMD, Flat Lead	En existencias2.144	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	1.2V @ 250µA	6nC @ 4.5V	300pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
SLA5096	Sanken	MOSFET 3N/3P-CH 55V 8A 15-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: 15-SIP, Exposed Tab, Formed Leads Supplier Device Package: 15-SIP	Paquete: 15-SIP, Exposed Tab, Formed Leads	En existencias6.544	Standard	55V	8A	-	-	-	-	-	-	Through Hole	15-SIP, Exposed Tab, Formed Leads	15-SIP
SI4214DDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias688.488	Logic Level Gate	30V	8.5A	19.5 mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	660pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN65D8LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 180MA SOT363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	En existencias3.600	-	-	-	-	-	-	-	-	-	-	-	-
TSM6866SDCA RVG	TSC America Inc.	MOSFET, DUAL, N-CHANNEL, TRENCH, FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paquete: 8-TSSOP (0.173", 4.40mm Width)	En existencias422.556	Standard	20V	6A (Ta)	30 mOhm @ 6A, 4.5V	600mV @ 250µA	5nC @ 4.5V	565pF @ 8V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CSD87331Q3D	Texas Instruments	MOSFET 2N-CH 30V 15A 8SON FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 518pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	Paquete: 8-PowerLDFN	En existencias3.456	Standard	30V	15A	-	2.1V @ 250µA	3.2nC @ 4.5V	518pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
SI4214DDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias632.880	Logic Level Gate	30V	8.5A	19.5 mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	660pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6930A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias531.120	Logic Level Gate	30V	5.5A	40 mOhm @ 5.5A, 10V	3V @ 250µA	7nC @ 5V	460pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN62D0UDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.35A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias3.344	Standard	60V	350mA	2 Ohm @ 100mA, 4.5V	1V @ 250µA	0.5nC @ 4.5V	32pF @ 30V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SLA5064	Sanken	MOSFET 3N/3P-CH 60V 10A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP Supplier Device Package: 12-SIP	Paquete: 12-SIP	En existencias51.852	Logic Level Gate	60V	10A	140 mOhm @ 5A, 4V	-	-	460pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP
CAS530M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 630A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Paquete: -	Request a Quote	-	1200V (1.2kV)	630A (Tc)	3.47mOhm @ 530A, 15V	3.6V @ 127mA	1362nC @ 15V	38900pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
DMTH10H017LPD-13	Diodes Incorporated	MOSFET 2N-CH 100V 59A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Power - Max: 2.6W (Ta), 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type E)	Paquete: -	En existencias6.912	-	100V	59A (Tc)	17.4mOhm @ 17A, 10V	3V @ 250µA	28.6nC @ 10V	1986pF @ 50V	2.6W (Ta), 93W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type E)
PJS6604_S2_00001	Panjit International Inc.	MOSFET N/P-CH 30V 4.4A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 15V, 443pF @ 15V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	Paquete: -	Request a Quote	-	30V	4.4A (Ta), 3.1A (Ta)	48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V	1.2V @ 250µA, 1.3V @ 250µA	11.3nC @ 10V, 11nC @ 10V	447pF @ 15V, 443pF @ 15V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
SIZ250DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 14A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	Paquete: -	En existencias1.410	-	60V	14A (Ta), 38A (Tc)	12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V	2.4V @ 250µA	21nC @ 10V	840pF @ 30V, 790pF @ 30V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
FDG6304P-F169	onsemi	MOSFET 2P-CH 25V 0.41A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	Paquete: -	Request a Quote	Logic Level Gate	25V	410mA (Ta)	1.1Ohm @ 410mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	62pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDMS8025AS	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRF7343QTRPBF	Infineon Technologies	MOSFET N/P-CH 55V 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: -	Request a Quote	-	55V	4.7A, 3.4A	50mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP32D9UDA-7B	Diodes Incorporated	MOSFET 2P-CH 0.22A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	Paquete: -	Request a Quote	-	-	220mA (Ta)	5Ohm @ 100mA, 4.5V	1V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
FW341-TL-E	onsemi	PCH+NCH 4V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
EPC2106	EPC	GANFET 2N-CH 100V 1.7A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	En existencias247.662	-	100V	1.7A	70mOhm @ 2A, 5V	2.5V @ 600µA	0.73nC @ 5V	75pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
DMP2160UFDB-7R	Diodes Incorporated	MOSFET P-CH SOT23 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMP4013SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NVMFD030N06CT1G	onsemi	MOSFET 2N-CH 60V 7A/19A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V Power - Max: 3.2W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Paquete: -	Request a Quote	-	60V	7A (Ta), 19A (Tc)	29.7mOhm @ 3A, 10V	4V @ 13µA	4.7nC @ 10V	255pF @ 30V	3.2W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
G05NP04S	Goford Semiconductor	MOSFET 40V 4.5A/10A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), 10A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 1A, 10V, 37mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V, 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V, 520pF @ 20V Power - Max: 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: -	Request a Quote	-	40V	4.5A (Tc), 10A (Tc)	41mOhm @ 1A, 10V, 37mOhm @ 10A, 10V	2.5V @ 250µA	8.9nC @ 10V, 13nC @ 10V	516pF @ 20V, 520pF @ 20V	2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

IRF7754TRPBF

Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paquete: 8-TSSOP (0.173", 4.40mm Width)

En existencias3.152

Logic Level Gate

12V

5.5A

25 mOhm @ 5.4A, 4.5V

900mV @ 250µA

22nC @ 4.5V

1984pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

TMC1620-TO

Trinamic Motion Control GmbH

MOSFET N/P-CH 60V TO252-4

FET Type: N and P-Channel, Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 4.7A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
Power - Max: 3.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD

En existencias7.808

Standard

60V

6.6A, 4.7A

36 mOhm @ 6A, 10V

3V @ 250µA

19.2nC @ 4.5V

1560pF @ 25V

3.13W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

NTMD5836NLR2G

ON Semiconductor

MOSFET 2N-CH 40V 9A/5.7A SO-8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 5.7A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias7.552

Logic Level Gate

40V

9A, 5.7A

12 mOhm @ 10A, 10V

3V @ 250µA

50nC @ 10V

2120pF @ 20V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTJD3158CT2G

ON Semiconductor

MOSFET N/P-CH 20V SC88-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias378.300

Logic Level Gate

20V

630mA, 820mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NTHD4401PT3

ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

Paquete: 8-SMD, Flat Lead

En existencias2.144

Logic Level Gate

20V

2.1A

155 mOhm @ 2.1A, 4.5V

1.2V @ 250µA

6nC @ 4.5V

300pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

SLA5096

Sanken

MOSFET 3N/3P-CH 55V 8A 15-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 15-SIP, Exposed Tab, Formed Leads
Supplier Device Package: 15-SIP

Paquete: 15-SIP, Exposed Tab, Formed Leads

En existencias6.544

Standard

55V

8A

-

Through Hole

15-SIP, Exposed Tab, Formed Leads

15-SIP

SI4214DDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias688.488

Logic Level Gate

30V

8.5A

19.5 mOhm @ 8A, 10V

2.5V @ 250µA

22nC @ 10V

660pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN65D8LDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 180MA SOT363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

En existencias3.600

-

TSM6866SDCA RVG

TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paquete: 8-TSSOP (0.173", 4.40mm Width)

En existencias422.556

Standard

20V

6A (Ta)

30 mOhm @ 6A, 4.5V

600mV @ 250µA

5nC @ 4.5V

565pF @ 8V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CSD87331Q3D

Texas Instruments

MOSFET 2N-CH 30V 15A 8SON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 518pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

Paquete: 8-PowerLDFN

En existencias3.456

Standard

30V

15A

-

2.1V @ 250µA

3.2nC @ 4.5V

518pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

SI4214DDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias632.880

Logic Level Gate

30V

8.5A

19.5 mOhm @ 8A, 10V

2.5V @ 250µA

22nC @ 10V

660pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6930A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias531.120

Logic Level Gate

30V

5.5A

40 mOhm @ 5.5A, 10V

3V @ 250µA

7nC @ 5V

460pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN62D0UDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.35A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias3.344

Standard

60V

350mA

2 Ohm @ 100mA, 4.5V

1V @ 250µA

0.5nC @ 4.5V

32pF @ 30V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SLA5064

Sanken

MOSFET 3N/3P-CH 60V 10A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP

Paquete: 12-SIP

En existencias51.852

Logic Level Gate

60V

10A

140 mOhm @ 5A, 4V

-

460pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP

CAS530M12BM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 630A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

Paquete: -

Request a Quote

-

1200V (1.2kV)

630A (Tc)

3.47mOhm @ 530A, 15V

3.6V @ 127mA

1362nC @ 15V

38900pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

DMTH10H017LPD-13

Diodes Incorporated

MOSFET 2N-CH 100V 59A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Power - Max: 2.6W (Ta), 93W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type E)

Paquete: -

En existencias6.912

-

100V

59A (Tc)

17.4mOhm @ 17A, 10V

3V @ 250µA

28.6nC @ 10V

1986pF @ 50V

2.6W (Ta), 93W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type E)

PJS6604_S2_00001

Panjit International Inc.

MOSFET N/P-CH 30V 4.4A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 15V, 443pF @ 15V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

Paquete: -

Request a Quote

-

30V

4.4A (Ta), 3.1A (Ta)

48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V

1.2V @ 250µA, 1.3V @ 250µA

11.3nC @ 10V, 11nC @ 10V

447pF @ 15V, 443pF @ 15V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SIZ250DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 14A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V, 790pF @ 30V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

Paquete: -

En existencias1.410

-

60V

14A (Ta), 38A (Tc)

12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V

2.4V @ 250µA

21nC @ 10V

840pF @ 30V, 790pF @ 30V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

FDG6304P-F169

onsemi

MOSFET 2P-CH 25V 0.41A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

Paquete: -

Request a Quote

Logic Level Gate

25V

410mA (Ta)

1.1Ohm @ 410mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

62pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FDMS8025AS

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

IRF7343QTRPBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: -

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55V

4.7A, 3.4A

50mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP32D9UDA-7B

Diodes Incorporated

MOSFET 2P-CH 0.22A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

Paquete: -

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-

220mA (Ta)

5Ohm @ 100mA, 4.5V

1V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

FW341-TL-E

onsemi

PCH+NCH 4V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

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EPC2106

EPC

GANFET 2N-CH 100V 1.7A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

En existencias247.662

-

100V

1.7A

70mOhm @ 2A, 5V

2.5V @ 600µA

0.73nC @ 5V

75pF @ 50V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

DMP2160UFDB-7R

Diodes Incorporated

MOSFET P-CH SOT23

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

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DMP4013SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

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NVMFD030N06CT1G

onsemi

MOSFET 2N-CH 60V 7A/19A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Power - Max: 3.2W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Paquete: -

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60V

7A (Ta), 19A (Tc)

29.7mOhm @ 3A, 10V

4V @ 13µA

4.7nC @ 10V

255pF @ 30V

3.2W (Ta), 23W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

G05NP04S

Goford Semiconductor

MOSFET 40V 4.5A/10A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), 10A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 1A, 10V, 37mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V, 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 516pF @ 20V, 520pF @ 20V
Power - Max: 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: -

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40V

4.5A (Tc), 10A (Tc)

41mOhm @ 1A, 10V, 37mOhm @ 10A, 10V

2.5V @ 250µA

8.9nC @ 10V, 13nC @ 10V

516pF @ 20V, 520pF @ 20V

2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP