Página 130 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF6802SDTR1PBF	Infineon Technologies	MOSFET 2N-CH 25V 16A SA FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V Power - Max: 1.7W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric SA Supplier Device Package: DIRECTFET? SA	Paquete: DirectFET? Isometric SA	En existencias3.936	Logic Level Gate	25V	16A	4.2 mOhm @ 16A, 10V	2.1V @ 35µA	13nC @ 4.5V	1350pF @ 13V	1.7W	-40°C ~ 150°C (TJ)	Surface Mount	DirectFET? Isometric SA	DIRECTFET? SA
GWS9293	Intersil	MOSFET 2N-CH 20V 9.4A 4QFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 3.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VDFN Supplier Device Package: 4-QFN (2x2)	Paquete: 4-VDFN	En existencias7.840	Standard	20V	9.4A (Ta)	17 mOhm @ 3A, 4.5V	1.5V @ 1mA	3.5nC @ 4V	400pF @ 10V	3.6W	-55°C ~ 150°C (TJ)	Surface Mount	4-VDFN	4-QFN (2x2)
AO6808_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4.6A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Paquete: SC-74, SOT-457	En existencias6.768	Logic Level Gate	20V	4.6A	23 mOhm @ 6A, 4.5V	1V @ 250µA	21nC @ 10V	780pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
APTM50DHM75TG	Microsemi Corporation	MOSFET 2N-CH 500V 46A SP4 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	Paquete: SP4	En existencias4.032	Standard	500V	46A	90 mOhm @ 23A, 10V	5V @ 2.5mA	123nC @ 10V	5600pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
NTQD6968R2	ON Semiconductor	MOSFET 2N-CH 20V 6.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 16V Power - Max: 1.42W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	Paquete: 8-TSSOP (0.173", 4.40mm Width)	En existencias21.876	Logic Level Gate	20V	6.6A	22 mOhm @ 6.6A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	900pF @ 16V	1.42W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTM50TAM65FPG	Microsemi Corporation	MOSFET 6N-CH 500V 51A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	Paquete: SP6	En existencias7.040	Standard	500V	51A	78 mOhm @ 25.5A, 10V	5V @ 2.5mA	140nC @ 10V	7000pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
NTMFD4C87NT1G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	Paquete: 8-PowerTDFN	En existencias5.072	Standard	30V	11.7A, 14.9A	5.4 mOhm @ 30A, 10V	2.2V @ 250µA	22.2nC @ 10V	1252pF @ 15V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
MCH6603-TL-H	ON Semiconductor	MOSFET 2P-CH 50V 0.14A MCPH6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	Paquete: 6-SMD, Flat Leads	En existencias3.968	Logic Level Gate, 1.5V Drive	50V	140mA	23 Ohm @ 40mA, 4V	-	1.4nC @ 10V	7.4pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
CSD88584Q5DCT	Texas Instruments	MOSFET ARRAY 2N-CH 40V 22VSON FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	Paquete: 22-PowerTFDFN	En existencias5.408	Standard	40V	-	0.95 mOhm @ 30A, 10V	2.3V @ 250µA	88nC @ 4.5V	12400pF @ 20V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)
BUK9K5R6-30EX	Nexperia USA Inc.	MOSFET 2N-CH 30V 40A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Paquete: SOT-1205, 8-LFPAK56	En existencias3.680	Logic Level Gate	30V	40A	5.8 mOhm @ 10A, 5V	2.1V @ 1mA	22.6nC @ 5V	2480pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SQJB00EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 60V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	Paquete: PowerPAK? SO-8 Dual	En existencias6.688	Standard	60V	30A (Tc)	13 mOhm @ 10A, 10V	3.5V @ 250µA	35nC @ 10V	1700pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ALD110804SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Paquete: 16-SOIC (0.154", 3.90mm Width)	En existencias7.184	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.4V	420mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
BUK7K45-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 21.4A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21.4A Rds On (Max) @ Id, Vgs: 37.6 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V Power - Max: 53W Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	Paquete: SOT-1205, 8-LFPAK56	En existencias7.792	Standard	100V	21.4A	37.6 mOhm @ 5A, 10V	4V @ 1mA	25.9nC @ 10V	1533pF @ 25V	53W	-	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AON6978	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 20A/28A 8-DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A, 28A Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	Paquete: 8-PowerVDFN	En existencias180.000	Logic Level Gate	30V	20A, 28A	5.7 mOhm @ 20A, 10V	2.2V @ 250µA	25nC @ 10V	1010pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
SI4501BDY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V/8V 8SOIC FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 12A, 8A Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V Power - Max: 4.5W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias146.220	Logic Level Gate	30V, 8V	12A, 8A	17 mOhm @ 10A, 10V	2V @ 250µA	25nC @ 10V	805pF @ 15V	4.5W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7304PBF	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias144.000	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3021LK4-13	Diodes Incorporated	MOSFET N/P-CH 30V TO252-4L FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD	En existencias4.256	Logic Level Gate	30V	9.4A, 6.8A	21 mOhm @ 7A, 10V	2.1V @ 250µA	17.4nC @ 10V	751pF @ 10V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
UM6K31NTN	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A UMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias782.052	Logic Level Gate, 2.5V Drive	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
FDMC89521L	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 8.2A POWER33 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	Paquete: 8-PowerWDFN	En existencias52.296	Logic Level Gate	60V	8.2A	17 mOhm @ 8.2A, 10V	3V @ 250µA	24nC @ 10V	1635pF @ 30V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
MCQ4828-TP	Micro Commercial Co	MOSFET 2N-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 1.25W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: -	Request a Quote	-	60V	4.5A (Ta)	56mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	1.25W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN4027SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 5.4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: -	Request a Quote	-	40V	5.4A (Ta)	27mOhm @ 7A, 10V	3V @ 250µA	12.9nC @ 10V	604pF @ 20V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSO615NGXUMA1	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	Paquete: -	En existencias80.190	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
DMN10H6D2LFDB-13	Diodes Incorporated	MOSFET 2N-CH 100V 0.27A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Paquete: -	Request a Quote	-	100V	270mA (Ta)	6Ohm @ 190mA, 10V	2V @ 1mA	1.2nC @ 10V	41pF @ 50V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
KFC4B22180LE	Nuvoton Technology Corporation	DUAL NCH MOSFET 20V, 5A, 9.4MOHM FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 640µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 10V Power - Max: 400mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-XFLGA, CSP Supplier Device Package: 4-CSP (1.74x1.74)	Paquete: -	En existencias3.000	-	20V	5A (Ta)	11.9mOhm @ 2.5A, 4.5V	1.4V @ 640µA	23nC @ 4V	2440pF @ 10V	400mW (Ta)	150°C	Surface Mount	4-XFLGA, CSP	4-CSP (1.74x1.74)
EPC2105	EPC	GANFET 2N-CH 80V 9.5A/38A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Paquete: -	En existencias2.898	-	80V	9.5A, 38A	14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	2.5V @ 2.5mA, 2.5V @ 10mA	2.5nC @ 5V, 10nC @ 5V	300pF @ 40V, 1100pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
DMC2710UV-7	Diodes Incorporated	MOSFET N/P-CH 20V 1.1A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 460mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Paquete: -	En existencias25.704	-	20V	1.1A (Ta), 800mA (Ta)	400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	460mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
AOD609G	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 12A TO252-4L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	Paquete: -	Request a Quote	-	40V	12A (Tc)	30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V	3V @ 250µA	13nC @ 10V, 21nC @ 10V	545pF @ 20V, 890pF @ 20V	2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252-4L
MCH6626-TL-E	onsemi	MOSFET N/P-CH 20V 1.6A 6MCPH FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	Paquete: -	Request a Quote	Logic Level Gate	20V	1.6A, 1A	230mOhm @ 800mA, 4V	-	1.4nC @ 4V	105pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH

IRF6802SDTR1PBF

Infineon Technologies

MOSFET 2N-CH 25V 16A SA

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Power - Max: 1.7W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric SA
Supplier Device Package: DIRECTFET? SA

Paquete: DirectFET? Isometric SA

En existencias3.936

Logic Level Gate

25V

16A

4.2 mOhm @ 16A, 10V

2.1V @ 35µA

13nC @ 4.5V

1350pF @ 13V

1.7W

-40°C ~ 150°C (TJ)

Surface Mount

DirectFET? Isometric SA

DIRECTFET? SA

GWS9293

Intersil

MOSFET 2N-CH 20V 9.4A 4QFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 3.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Supplier Device Package: 4-QFN (2x2)

Paquete: 4-VDFN

En existencias7.840

Standard

20V

9.4A (Ta)

17 mOhm @ 3A, 4.5V

1.5V @ 1mA

3.5nC @ 4V

400pF @ 10V

3.6W

-55°C ~ 150°C (TJ)

Surface Mount

4-VDFN

4-QFN (2x2)

AO6808_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.6A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

Paquete: SC-74, SOT-457

En existencias6.768

Logic Level Gate

20V

4.6A

23 mOhm @ 6A, 4.5V

1V @ 250µA

21nC @ 10V

780pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

APTM50DHM75TG

Microsemi Corporation

MOSFET 2N-CH 500V 46A SP4

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

Paquete: SP4

En existencias4.032

Standard

500V

46A

90 mOhm @ 23A, 10V

5V @ 2.5mA

123nC @ 10V

5600pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

NTQD6968R2

ON Semiconductor

MOSFET 2N-CH 20V 6.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 16V
Power - Max: 1.42W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

Paquete: 8-TSSOP (0.173", 4.40mm Width)

En existencias21.876

Logic Level Gate

20V

6.6A

22 mOhm @ 6.6A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

900pF @ 16V

1.42W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTM50TAM65FPG

Microsemi Corporation

MOSFET 6N-CH 500V 51A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

Paquete: SP6

En existencias7.040

Standard

500V

51A

78 mOhm @ 25.5A, 10V

5V @ 2.5mA

140nC @ 10V

7000pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

NTMFD4C87NT1G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

Paquete: 8-PowerTDFN

En existencias5.072

Standard

30V

11.7A, 14.9A

5.4 mOhm @ 30A, 10V

2.2V @ 250µA

22.2nC @ 10V

1252pF @ 15V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

MCH6603-TL-H

ON Semiconductor

MOSFET 2P-CH 50V 0.14A MCPH6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 140mA
Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

Paquete: 6-SMD, Flat Leads

En existencias3.968

Logic Level Gate, 1.5V Drive

50V

140mA

23 Ohm @ 40mA, 4V

-

1.4nC @ 10V

7.4pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

CSD88584Q5DCT

Texas Instruments

MOSFET ARRAY 2N-CH 40V 22VSON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerTFDFN
Supplier Device Package: 22-VSON-CLIP (5x6)

Paquete: 22-PowerTFDFN

En existencias5.408

Standard

40V

-

0.95 mOhm @ 30A, 10V

2.3V @ 250µA

88nC @ 4.5V

12400pF @ 20V

12W

-55°C ~ 150°C (TJ)

Surface Mount

22-PowerTFDFN

22-VSON-CLIP (5x6)

BUK9K5R6-30EX

Nexperia USA Inc.

MOSFET 2N-CH 30V 40A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Paquete: SOT-1205, 8-LFPAK56

En existencias3.680

Logic Level Gate

30V

40A

5.8 mOhm @ 10A, 5V

2.1V @ 1mA

22.6nC @ 5V

2480pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SQJB00EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

Paquete: PowerPAK? SO-8 Dual

En existencias6.688

Standard

60V

30A (Tc)

13 mOhm @ 10A, 10V

3.5V @ 250µA

35nC @ 10V

1700pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

ALD110804SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

En existencias7.184

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.4V

420mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

BUK7K45-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 21.4A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Rds On (Max) @ Id, Vgs: 37.6 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Power - Max: 53W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

Paquete: SOT-1205, 8-LFPAK56

En existencias7.792

Standard

100V

21.4A

37.6 mOhm @ 5A, 10V

4V @ 1mA

25.9nC @ 10V

1533pF @ 25V

53W

-

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AON6978

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 20A/28A 8-DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 28A
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

Paquete: 8-PowerVDFN

En existencias180.000

Logic Level Gate

30V

20A, 28A

5.7 mOhm @ 20A, 10V

2.2V @ 250µA

25nC @ 10V

1010pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

SI4501BDY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V/8V 8SOIC

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Power - Max: 4.5W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias146.220

Logic Level Gate

30V, 8V

12A, 8A

17 mOhm @ 10A, 10V

2V @ 250µA

25nC @ 10V

805pF @ 15V

4.5W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRF7304PBF

Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias144.000

Logic Level Gate

20V

4.3A

90 mOhm @ 2.2A, 4.5V

700mV @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3021LK4-13

Diodes Incorporated

MOSFET N/P-CH 30V TO252-4L

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.4A, 6.8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 751pF @ 10V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD

En existencias4.256

Logic Level Gate

30V

9.4A, 6.8A

21 mOhm @ 7A, 10V

2.1V @ 250µA

17.4nC @ 10V

751pF @ 10V

2.7W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

UM6K31NTN

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias782.052

Logic Level Gate, 2.5V Drive

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

FDMC89521L

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 8.2A POWER33

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

Paquete: 8-PowerWDFN

En existencias52.296

Logic Level Gate

60V

8.2A

17 mOhm @ 8.2A, 10V

3V @ 250µA

24nC @ 10V

1635pF @ 30V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

MCQ4828-TP

Micro Commercial Co

MOSFET 2N-CH 60V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Power - Max: 1.25W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: -

Request a Quote

-

60V

4.5A (Ta)

56mOhm @ 4.5A, 10V

3V @ 250µA

10.5nC @ 10V

540pF @ 30V

1.25W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN4027SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 5.4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: -

Request a Quote

-

40V

5.4A (Ta)

27mOhm @ 7A, 10V

3V @ 250µA

12.9nC @ 10V

604pF @ 20V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSO615NGXUMA1

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

Paquete: -

En existencias80.190

Logic Level Gate

60V

2.6A

150mOhm @ 2.6A, 4.5V

2V @ 20µA

20nC @ 10V

380pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

DMN10H6D2LFDB-13

Diodes Incorporated

MOSFET 2N-CH 100V 0.27A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

Paquete: -

Request a Quote

-

100V

270mA (Ta)

6Ohm @ 190mA, 10V

2V @ 1mA

1.2nC @ 10V

41pF @ 50V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

KFC4B22180LE

Nuvoton Technology Corporation

DUAL NCH MOSFET 20V, 5A, 9.4MOHM

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 640µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 10V
Power - Max: 400mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-XFLGA, CSP
Supplier Device Package: 4-CSP (1.74x1.74)

Paquete: -

En existencias3.000

-

20V

5A (Ta)

11.9mOhm @ 2.5A, 4.5V

1.4V @ 640µA

23nC @ 4V

2440pF @ 10V

400mW (Ta)

150°C

Surface Mount

4-XFLGA, CSP

4-CSP (1.74x1.74)

EPC2105

EPC

GANFET 2N-CH 80V 9.5A/38A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

Paquete: -

En existencias2.898

-

80V

9.5A, 38A

14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

2.5V @ 2.5mA, 2.5V @ 10mA

2.5nC @ 5V, 10nC @ 5V

300pF @ 40V, 1100pF @ 40V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

DMC2710UV-7

Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Power - Max: 460mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

Paquete: -

En existencias25.704

-

20V

1.1A (Ta), 800mA (Ta)

400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V, 0.7nC @ 4.5V

42pF @ 16V, 49pF @ 16V

460mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

AOD609G

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 12A TO252-4L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

Paquete: -

Request a Quote

-

40V

12A (Tc)

30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V

3V @ 250µA

13nC @ 10V, 21nC @ 10V

545pF @ 20V, 890pF @ 20V

2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

TO-252-4L

MCH6626-TL-E

onsemi

MOSFET N/P-CH 20V 1.6A 6MCPH

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A, 1A
Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

Paquete: -

Request a Quote

Logic Level Gate

20V

1.6A, 1A

230mOhm @ 800mA, 4V

-

1.4nC @ 4V

105pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH