Página 116 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  116/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BTS7904BATMA1
Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V, 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Power - Max: 69W, 96W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: PG-TO263-5
Paquete: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
En existencias3.472
Logic Level Gate
55V, 30V
40A
11.7 mOhm @ 20A, 10V
2.2V @ 40µA
121nC @ 10V
6100pF @ 25V
69W, 96W
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
PG-TO263-5
JANTX2N7334
Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

  • FET Type: 4 N-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: MO-036AB
Paquete: 14-DIP (0.300", 7.62mm)
En existencias4.448
Standard
100V
1A
700 mOhm @ 600mA, 10V
4V @ 250µA
60nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
MO-036AB
hot ECH8651R-TL-HX
ON Semiconductor

MOSFET 2N-CH 24V 10A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
Paquete: 8-SMD, Flat Lead
En existencias1.502.940
Logic Level Gate
24V
10A
14 mOhm @ 5A, 4.5V
-
24nC @ 10V
-
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
SI6963BDQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 3.4A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias4.544
Logic Level Gate
20V
3.4A
45 mOhm @ 3.9A, 4.5V
1.4V @ 250µA
11nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTM100A12STG
Microsemi Corporation

MOSFET 2N-CH 1000V 68A LP8W

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 68A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 616nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17400pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias7.504
Standard
1000V (1kV)
68A
120 mOhm @ 34A, 10V
5V @ 10mA
616nC @ 10V
17400pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTC60DHM24T3G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias2.512
Super Junction
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
FW217A-TL-2W
ON Semiconductor

MOSFET 2N-CH 35V 6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
  • Power - Max: 2.2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.104
Logic Level Gate, 4.5V Drive
35V
6A
39 mOhm @ 6A, 10V
-
10nC @ 10V
470pF @ 20V
2.2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC6070LND-7
Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
Paquete: 8-PowerVDFN
En existencias7.088
Standard
60V
3.1A, 2.4A
85 mOhm @ 1.5A, 10V
3V @ 250µA
11.5nC @ 10V
731pF @ 20V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
ALD212900PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 14 Ohm
  • Vgs(th) (Max) @ Id: 20mV @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
Paquete: 8-DIP (0.300", 7.62mm)
En existencias6.144
Logic Level Gate
10.6V
80mA
14 Ohm
20mV @ 20µA
-
30pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
PMDXB950UPEZ
Nexperia USA Inc.

MOSFET 2P-CH 20V 0.5A 6DFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
Paquete: 6-XFDFN Exposed Pad
En existencias107.412
Logic Level Gate
20V
500mA
1.4 Ohm @ 500mA, 4.5V
950mV @ 250µA
2.1nC @ 4.5V
43pF @ 10V
265mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
SIZF640DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 41A PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 159A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.37mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5750pF @ 20V
  • Power - Max: 4.2W (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerDFN
  • Supplier Device Package: PowerPAIR® 6x5FS
Paquete: -
Request a Quote
-
40V
41A (Ta), 159A (Tc)
1.37mOhm @ 15A, 10V
2.4V @ 250µA
106nC @ 10V
5750pF @ 20V
4.2W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerDFN
PowerPAIR® 6x5FS
PMCM650CUNEZ
Nexperia USA Inc.

MOSFET 2N-CH 6WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 556mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WLCSP (1.48x0.98)
Paquete: -
En existencias13.500
-
-
-
-
900mV @ 250µA
13nC @ 4.5V
-
556mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFBGA, WLCSP
6-WLCSP (1.48x0.98)
UPA1760G-E1-A
Renesas

MOSFET 2N-CH 30V 8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
30V
8A (Ta)
26mOhm @ 4A, 10V
2.5V @ 1mA
14nC @ 10V
760pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
DMTH4008LPDW-13
Diodes Incorporated

MOSFET 2N-CH 40V 10A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
  • Power - Max: 2.67W (Ta), 39.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
Paquete: -
En existencias7.500
-
40V
10A (Ta), 46.2A (Tc)
12.3mOhm @ 20A, 10V
2.3V @ 250µA
12.3nC @ 10V
881pF @ 20V
2.67W (Ta), 39.4W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
2N7002KDW-TP-HF
Micro Commercial Co

MOSFET 2N-CH 60V 0.34A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
60V
340mA
3Ohm @ 500mA, 10V
2.5V @ 1mA
-
40pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN2991UDJ
Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35C @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
Paquete: -
Request a Quote
-
20V
520mA (Ta)
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.35C @ 4.5V
21.5pF @ 15V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
FDS6990S
Fairchild Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
Request a Quote
-
30V
7.5A (Ta)
22mOhm @ 7.5A, 10V
3V @ 1mA
16nC @ 5V
1233pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FF3MR12KM1HHPSA1
Infineon Technologies

FF3MR12KM1HHPSA1

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
  • Vgs(th) (Max) @ Id: 5.1V @ 112mA
  • Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MMHB
Paquete: -
Request a Quote
-
1200V (1.2kV)
190A (Tc)
4.44mOhm @ 280A, 18V
5.1V @ 112mA
800nC @ 18V
24200pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-62MMHB
UT6KC5TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: DFN2020-8D
Paquete: -
En existencias3.987
-
60V
3.5A (Ta)
95mOhm @ 3.5A, 10V
2.5V @ 1mA
3.1nC @ 10V
135pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerUDFN
DFN2020-8D
SIZ200DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 22A 8POWERPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
Paquete: -
Request a Quote
-
30V
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
2.4V @ 250µA
28nC @ 10V, 30nC @ 10V
1510pF @ 15V, 1600pF @ 15V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
DMT2005UDV-7
Diodes Incorporated

MOSFET 2N-CH 24V 50A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
Paquete: -
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-
24V
50A (Tc)
7mOhm @ 14A, 10V
1.5V @ 250µA
46.7nC @ 10V
2060pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
NDS9952A-F011
onsemi

MOSFET N/P-CH 30V 2.9A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
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-
30V
2.9A
80mOhm @ 1A, 10V
2.8V @ 250µA
27nC @ 10V, 5nC @ 10V
320pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NXV08H250DT1
onsemi

APM17-MDC, MV7 80V, AL2O3, 2 PHA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
  • Vgs(th) (Max) @ Id: 4.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
  • Power - Max: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
  • Supplier Device Package: APM17-MDC
Paquete: -
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-
80V
-
1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
4.6V @ 1mA
320nC @ 10V
24350pF @ 40V
-
175°C (TJ)
Through Hole
17-PowerDIP Module (1.390", 35.30mm)
APM17-MDC
SSM6N48FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
  • Power - Max: 300mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paquete: -
En existencias8.250
-
30V
100mA (Ta)
3.2Ohm @ 10mA, 4V
1.5V @ 100µA
-
15.1pF @ 3V
300mW
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
DMN3401LV-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 490mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
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-
30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 100µA
1.2nC @ 10V
50pF @ 15V
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN3061SVTQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
  • Power - Max: 880mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
Paquete: -
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-
30V
3.4A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
6.6nC @ 10V
278pF @ 15V
880mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMN52D0UV-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.48A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 5mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
  • Power - Max: 480mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
En existencias9.000
-
50V
480mA (Ta)
2Ohm @ 5mA, 5V
1V @ 250µA
1.5nC @ 10V
39pF @ 25V
480mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
BUK9K25-40E-1X
Nexperia USA Inc.

MOSFET 40V 18.2A LFPAK56D

  • FET Type: -
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
  • Power - Max: 32W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
Paquete: -
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Logic Level Gate
40V
18.2A (Ta)
24mOhm @ 5A, 10V
2.1V @ 1mA
6.3nC @ 5V
701pF @ 25V
32W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D