Página 112 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arreglos

Registros 5.684
Página  112/203
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF5810TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
  • Power - Max: 960mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias385.164
Logic Level Gate
20V
2.9A
90 mOhm @ 2.9A, 4.5V
1.2V @ 250µA
9.6nC @ 4.5V
650pF @ 16V
960mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot VQ1001P
Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
Paquete: -
En existencias17.436
Logic Level Gate
30V
830mA
1.75 Ohm @ 200mA, 5V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot NTLJD3119CTAG
ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
Paquete: 6-WDFN Exposed Pad
En existencias34.752
Logic Level Gate
20V
2.6A, 2.3A
65 mOhm @ 3.8A, 4.5V
1V @ 250µA
3.7nC @ 4.5V
271pF @ 10V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
GWM120-0075X1-SMDSAM
IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 110A
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
Paquete: 17-SMD, Gull Wing
En existencias3.504
Standard
75V
110A
4.9 mOhm @ 60A, 10V
4V @ 1mA
115nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
hot SI1972DH-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias1.570.536
Standard
30V
1.3A
225 mOhm @ 1.3A, 10V
2.8V @ 250µA
2.8nC @ 10V
75pF @ 15V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
IXTL2X220N075T
IXYS

MOSFET 2N-CH 75V 120A I5-PAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
  • Power - Max: 150W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
Paquete: ISOPLUSi5-Pak?
En existencias4.848
Standard
75V
120A
5.5 mOhm @ 50A, 10V
4V @ 250µA
165nC @ 10V
7700pF @ 25V
150W
-55°C ~ 175°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
hot NTMD2P01R2G
ON Semiconductor

MOSFET 2P-CH 16V 2.3A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias469.392
Logic Level Gate
16V
2.3A
100 mOhm @ 2.4A, 4.5V
1.5V @ 250µA
18nC @ 4.5V
750pF @ 16V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SP8K5TB
Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias1.183.044
Logic Level Gate
30V
3.5A
83 mOhm @ 3.5A, 10V
2.5V @ 1mA
3.5nC @ 5V
140pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FMP26-02P
IXYS

MOSFET N/P-CH 200V 26A/17A I4PAC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 26A, 17A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
Paquete: i4-Pac?-5
En existencias4.320
Standard
200V
26A, 17A
60 mOhm @ 25A, 10V
5V @ 250µA
70nC @ 10V
2720pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
hot SI5935CDC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
Paquete: 8-SMD, Flat Lead
En existencias13.044
Standard
20V
4A
100 mOhm @ 3.1A, 4.5V
1V @ 250µA
11nC @ 5V
455pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
FDMD82100
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 7A 12POWER

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
Paquete: 12-PowerWDFN
En existencias2.688
Standard
100V
7A
19 mOhm @ 7A, 10V
4V @ 250µA
17nC @ 10V
1070pF @ 50V
1W
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
AOC2806
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN
  • Supplier Device Package: 4-AlphaDFN (1.7x1.7)
Paquete: 4-XDFN
En existencias7.920
Standard
-
-
-
-
12.5nC @ 4.5V
-
700mW
-55°C ~ 150°C (TJ)
Surface Mount
4-XDFN
4-AlphaDFN (1.7x1.7)
hot NTLJD3115PT1G
ON Semiconductor

MOSFET 2P-CH 20V 2.3A 6-WDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
Paquete: 6-WDFN Exposed Pad
En existencias122.064
Logic Level Gate
20V
2.3A
100 mOhm @ 2A, 4.5V
1V @ 250µA
6.2nC @ 4.5V
531pF @ 10V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
hot ECH8695R-TL-W
ON Semiconductor

MOSFET 2N-CH 24V 11A SOT28

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/ECH8
Paquete: 8-SMD, Flat Lead
En existencias17.904
Logic Level Gate, 2.5V Drive
24V
11A
9.1 mOhm @ 5A, 4.5V
1.3V @ 1mA
10nC @ 4.5V
-
1.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/ECH8
hot MTM78E2B0LBF
Panasonic Electronic Components

MOSFET 2N-CH 20V 4A WSMINI8-F1-B

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 2A, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: WSMini8-F1-B
Paquete: 8-SMD, Flat Lead
En existencias458.880
Standard
20V
4A
25 mOhm @ 2A, 4V
1.3V @ 1mA
-
1100pF @ 10V
150mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
WSMini8-F1-B
NTMFD024N06CT1G
onsemi

MOSFET 2N-CH 60V 8A/24A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
  • Power - Max: 3.1W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Paquete: -
Request a Quote
-
60V
8A (Ta), 24A (Tc)
22.6mOhm @ 3A, 10V
4V @ 20µA
5.7nC @ 10V
333pF @ 30V
3.1W (Ta), 28W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMTH4014LDVW-7
Diodes Incorporated

MOSFET 2N-CH 40V 10.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Power - Max: 1.16W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
Paquete: -
Request a Quote
-
40V
10.2A (Ta), 27.5A (Tc)
15mOhm @ 20A, 10V
3V @ 250µA
11.2nC @ 10V
750pF @ 20V
1.16W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
AO4807L_102
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
Request a Quote
-
30V
6A (Ta)
35mOhm @ 6A, 10V
2.4V @ 250µA
16nC @ 10V
760pF @ 15V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
G06N06S2
Goford Semiconductor

MOSFET 2N-CH 60V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V
  • Power - Max: 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
Request a Quote
-
60V
6A (Tc)
25mOhm @ 6A, 10V
2.4V @ 250µA
46nC @ 10V
1600pF @ 30V
2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M31HZGTB
Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias3.630
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
3V @ 1mA
7nC @ 5V, 40nC @ 10V
500pF @ 10V, 2500pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NXH040P120MNF1PG
onsemi

SIC 2N-CH 1200V 30A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
  • Power - Max: 74W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
1200V (1.2kV)
30A (Tc)
56mOhm @ 25A, 20V
4.3V @ 10mA
122.1nC @ 20V
1505pF @ 800V
74W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
FW803-TL-E
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMP31D7LDWQ-7
Diodes Incorporated

MOSFET 2P-CH 30V 0.55A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
En existencias9.000
-
30V
550mA (Ta)
900mOhm @ 420mA, 10V
2.6V @ 250µA
0.8nC @ 10V
19pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
FF4MR12W2M1HB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V 170A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
En existencias51
-
1200V (1.2kV)
170A (Tj)
4mOhm @ 200A, 18V
5.15V @ 80mA
594nC @ 18V
17600pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
DF23MR12W1M1B11BOMA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
  • Vgs(th) (Max) @ Id: 5.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1BM-2
Paquete: -
Request a Quote
-
1200V (1.2kV)
25A
45mOhm @ 25A, 15V
5.5V @ 10mA
620nC @ 15V
2000pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1BM-2
SIS590DN-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 100V 2.7A PPAK1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
  • Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V
  • Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
Paquete: -
Request a Quote
-
100V
2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
2.5V @ 250µA
-
265pF 2 50V, 325pF @ 50V
2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8 Dual
PowerPAK® 1212-8 Dual
TSM110NB04LDCR
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 10A/48A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
  • Power - Max: 2W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
Paquete: -
Request a Quote
-
40V
10A (Ta), 48A (Tc)
11mOhm @ 10A, 10V
2.5V @ 250µA
23nC @ 10V
1269pF @ 20V
2W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
PMDXB590UPEZ
Nexperia USA Inc.

MOSFET 2P-CH 20V 0.57A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 570mA (Ta), 2.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 770mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 10V
  • Power - Max: 280mW (Ta), 6W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
Paquete: -
En existencias15.000
-
20V
570mA (Ta), 2.3A (Tc)
770mOhm @ 1.2A, 4.5V
1V @ 250µA
0.8nC @ 4.5V
53.5pF @ 10V
280mW (Ta), 6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6