Página 711 - Transistores - Bipolar (BJT) - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - Bipolar (BJT) - Simple

Registros 20.307
Página  711/726
Imagen
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Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCV48E6327HTSA1
Infineon Technologies

TRANS PNP DARL 60V 0.5A SOT-89

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
Paquete: TO-243AA
En existencias2.688
500mA
60V
1V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
1W
200MHz
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89
2SD2257(CANO,A,Q)
Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
Paquete: TO-220-3 Full Pack
En existencias7.632
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
STX93003-AP
STMicroelectronics

TRANS PNP 400V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias3.584
1A
400V
500mV @ 100mA, 500mA
1mA
16 @ 350mA, 5V
1.5W
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
hot STH13009
STMicroelectronics

TRANS NPN 400V 12A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 12A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 2.4A, 12A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 5A, 5V
  • Power - Max: 100W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias6.112
12A
400V
2V @ 2.4A, 12A
-
18 @ 5A, 5V
100W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot TIP117
Fairchild/ON Semiconductor

TRANS PNP DARL 100V 2A TO-220

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
Paquete: TO-220-3
En existencias130.524
2A
100V
2.5V @ 8mA, 2A
2mA
1000 @ 1A, 4V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BC212B
Fairchild/ON Semiconductor

TRANS PNP 50V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias4.144
100mA
50V
600mV @ 5mA, 100mA
15nA (ICBO)
60 @ 2mA, 5V
350mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2SD2620J0L
Panasonic Electronic Components

TRANS NPN 100V 0.02A SSMINI-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
Paquete: SC-89, SOT-490
En existencias26.544
20mA
100V
200mV @ 1mA, 10mA
1µA
400 @ 2mA, 10V
125mW
200MHz
125°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F1
MJE803
ON Semiconductor

TRANS NPN DARL 80V 4A TO225AA

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
Paquete: TO-225AA, TO-126-3
En existencias3.328
4A
80V
2.8V @ 40mA, 2A
100µA
750 @ 2A, 3V
40W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
hot 2SD2528
Panasonic Electronic Components

TRANS NPN 60V 5A TO-220D

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 4A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220D-A1
Paquete: TO-220-3 Full Pack
En existencias20.556
5A
60V
300mV @ 100mA, 4A
100µA (ICBO)
500 @ 1A, 4V
2W
30MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220D-A1
SBC807-25WT1G
ON Semiconductor

TRANS PNP 45V 0.5A SC-70

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 460mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias2.800
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
460mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BC337-40 B1G
TSC America Inc.

TRANSISTOR, NPN, 45V, 0.8A, 250A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.280
800mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 5V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
JANTX2N5154
Aeroflex Metelics, Division of MACOM

DIODE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias4.432
2A
80V
1.5V @ 500mA, 5A
50µA
70 @ 2.5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
hot TIP41CTU
Fairchild/ON Semiconductor

TRANS NPN 100V 6A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
Paquete: TO-220-3
En existencias1.383.828
6A
100V
1.5V @ 600mA, 6A
700µA
15 @ 3A, 4V
2W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2SC57880PA
Panasonic Electronic Components

TRANS NPN 60V 3A MT-4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 375mA, 3A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: MT-4-A1
Paquete: 3-SIP
En existencias21.252
3A
60V
800mV @ 375mA, 3A
100µA
160 @ 1A, 4V
2W
180MHz
150°C (TJ)
Through Hole
3-SIP
MT-4-A1
2SCR522MT2L
Rohm Semiconductor

TRANS NPN 20V 0.2A VMT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VMT3
Paquete: SOT-723
En existencias6.288
200mA
20V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 1mA, 2V
150mW
400MHz
150°C (TJ)
Surface Mount
SOT-723
VMT3
hot FCX1051ATA
Diodes Incorporated

TRANS NPN 40V 3A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 5A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 10mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 155MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
Paquete: TO-243AA
En existencias24.432
3A
40V
340mV @ 100mA, 5A
10nA
290 @ 10mA, 2V
1W
155MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BC847CM3-TP
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 265 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
Paquete: -
Request a Quote
100 mA
50 V
600mV @ 5mA, 100mA
1mA
420 @ 2mA, 5V
265 mW
100MHz
-55°C ~ 150°C
Surface Mount
SOT-723
SOT-723
JANSM2N2219
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
Request a Quote
800 mA
50 V
1.6V @ 50mA, 500mA
10nA
100 @ 150mA, 10V
800 mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
NTE96
NTE Electronics, Inc

TRANS NPN 100V 7A TO59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 700mA, 7A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
  • Power - Max: 60 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
Paquete: -
Request a Quote
7 A
100 V
1.2V @ 700mA, 7A
-
60 @ 2A, 2V
60 W
30MHz
-65°C ~ 200°C (TJ)
Stud Mount
TO-210AA, TO-59-4, Stud
TO-59
2SAR544PFRAT100
Rohm Semiconductor

TRANS PNP 80V 2.5A MPT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2.5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 500 mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
Paquete: -
En existencias2.700
2.5 A
80 V
400mV @ 50mA, 1A
1µA (ICBO)
120 @ 100mA, 3V
500 mW
280MHz
150°C (TJ)
Surface Mount
TO-243AA
MPT3
TTD1409B-S4X
Toshiba Semiconductor and Storage

TRANS NPN DARL 400V 20UA TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
Paquete: -
En existencias126
6 A
400 V
2V @ 40mA, 4A
20µA (ICBO)
600 @ 2A, 2V
2 W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220SIS
2N5339QFN
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
Request a Quote
5 A
100 V
1.2V @ 500mA, 5A
100µA
60 @ 2A, 2V
1 W
-
-55°C ~ 200°C
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
CP208-2N3054-WN
Central Semiconductor Corp

TRANS NPN 55V 4A DIE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 55 V
  • Vce Saturation (Max) @ Ib, Ic: 6V @ 1A, 3A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
  • Power - Max: 25 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paquete: -
Request a Quote
4 A
55 V
6V @ 1A, 3A
500µA
25 @ 500mA, 4V
25 W
3MHz
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die
JANS2N3421S
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 5µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
Request a Quote
3 A
80 V
500mV @ 200mA, 2A
5µA
40 @ 1A, 2V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BCP53-16T-QF
Nexperia USA Inc.

BCP53-16T-Q/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 600 mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: -
En existencias11.700
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
600 mW
140MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANTX2N6693
Microchip Technology

TRANS NPN 400V 15A TO61

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
  • Current - Collector Cutoff (Max): 1mA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
  • Power - Max: 3 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
Paquete: -
Request a Quote
15 A
400 V
1V @ 3A, 15A
1mA (ICBO)
15 @ 1A, 3V
3 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
2SA1871-T1-AZ
Renesas Electronics Corporation

TRANSISTOR

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JAN2N5660U3
Microchip Technology

TRANS NPN 200V 2A U3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U3
Paquete: -
Request a Quote
2 A
200 V
800mV @ 400mA, 2A
200nA
40 @ 500mA, 5V
2 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U3