Página 600 - Transistores - Bipolar (BJT) - Simple | Productos semiconductores discretos | Heisener Electronics
Contáctenos
SalesDept@heisener.com 86-755-83210559 x831
Iniciar sesión/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carro 0

Transistores - Bipolar (BJT) - Simple

Registros 20.307
Página  600/726
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTXV2N2432A
Microsemi Corporation

TRANS NPN 45V 0.1A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paquete: TO-206AA, TO-18-3 Metal Can
En existencias5.600
100mA
45V
0.15mV @ 500µA, 10V
10nA
80 @ 1mA, 5V
300mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
BD897A-S
Bourns Inc.

TRANS NPN DARL 60V 8A

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.8V @ 16mA, 4A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: TO-220-3
En existencias3.312
8A
60V
2.8V @ 16mA, 4A
500µA
750 @ 4A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
2STD2360T4
STMicroelectronics

TRANS PNP 60V 3A DPAK

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
  • Power - Max: 15W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.512
3A
60V
500mV @ 150mA, 3A
100nA (ICBO)
160 @ 1A, 2V
15W
130MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
2STL1360
STMicroelectronics

TRANS NPN 60V 3A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
  • Power - Max: 1.2W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92L
Paquete: TO-226-3, TO-92-3 Long Body
En existencias4.224
3A
60V
500mV @ 150mA, 3A
100nA (ICBO)
160 @ 1A, 2V
1.2W
130MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92L
hot MPSA56G
ON Semiconductor

TRANS PNP 80V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias12.600
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N3390_D75Z
Fairchild/ON Semiconductor

TRANS NPN 25V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 4.5V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias2.496
500mA
25V
-
100nA (ICBO)
400 @ 2mA, 4.5V
625mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BC849AMTF
Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 310mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias539.376
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
310mW
300MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZTX603STZ
Diodes Incorporated

TRANS NPN DARL 80V 1A E-LINE

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
Paquete: E-Line-3, Formed Leads
En existencias3.376
1A
80V
1V @ 1mA, 1A
10µA
2000 @ 1A, 5V
1W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
DSC9G02D0L
Panasonic Electronic Components

TRANS NPN 30V 0.015A SSMINI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Power - Max: 125mW
  • Frequency - Transition: 650MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
Paquete: SC-89, SOT-490
En existencias7.472
15mA
30V
-
-
65 @ 1mA, 6V
125mW
650MHz
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
hot TIP121TU
Fairchild/ON Semiconductor

TRANS NPN DARL 80V 5A TO-220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
Paquete: TO-220-3
En existencias230.868
5A
80V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FJD3305H1TM
Fairchild/ON Semiconductor

TRANS NPN 400V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: 4MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias7.200
4A
400V
1V @ 1A, 4A
1µA (ICBO)
8 @ 2A, 5V
1.1W
4MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
CMNT3904E TR
Central Semiconductor Corp

TRANS NPN 60V 0.2A SOT953

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-953
  • Supplier Device Package: SOT-953
Paquete: SOT-953
En existencias7.536
200mA
40V
200mV @ 5mA, 50mA
-
100 @ 10mA, 1V
250mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-953
SOT-953
PHPT60610NYX
Nexperia USA Inc.

IC TRANS NPN 60V 10A LFPAK56

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 1A, 10A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-100, SOT-669
  • Supplier Device Package: LFPAK56, Power-SO8
Paquete: SC-100, SOT-669
En existencias15.402
10A
60V
360mV @ 1A, 10A
100nA
240 @ 500mA, 2V
1.5W
140MHz
175°C (TJ)
Surface Mount
SC-100, SOT-669
LFPAK56, Power-SO8
BC807-40QAZ
Nexperia USA Inc.

TRANS PNP 45V 0.5A DFN1010D-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
  • Power - Max: 900mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1010D-3
Paquete: 3-XDFN Exposed Pad
En existencias157.110
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
40 @ 500mA, 1V
900mW
80MHz
150°C (TJ)
Surface Mount
3-XDFN Exposed Pad
DFN1010D-3
hot FCX591TA
Diodes Incorporated

TRANS PNP 60V 1A SOT-89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
Paquete: TO-243AA
En existencias1.142.244
1A
60V
600mV @ 100mA, 1A
100nA
100 @ 500mA, 5V
1W
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot MMBT2484LT1G
ON Semiconductor

TRANS NPN 60V 0.1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
  • Power - Max: 225mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias992.160
100mA
60V
350mV @ 100µA, 1mA
10nA (ICBO)
250 @ 1mA, 5V
225mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot 2SA1162-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias288.000
150mA
50V
300mV @ 10mA, 100mA
100µA (ICBO)
120 @ 2mA, 6V
150mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
TIP29G
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
  • Power - Max: 2 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
Paquete: -
Request a Quote
1 A
40 V
700mV @ 125mA, 1A
300µA
40 @ 200mA, 4V
2 W
3MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
PBHV8110DA_R1_00001
Panjit International Inc.

TRANS NPN 100V 1A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
  • Power - Max: 1.25 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: -
En existencias3.123
1 A
100 V
450mV @ 100mA, 1A
500nA (ICBO)
140 @ 150mA, 2V
1.25 W
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BF821-QVL
Nexperia USA Inc.

BF821-Q/SOT23/TO-236AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
  • Power - Max: 250 mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
Paquete: -
Request a Quote
50 mA
300 V
800mV @ 5mA, 30mA
10nA (ICBO)
50 @ 25mA, 20V
250 mW
60MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
JANTXV2N3500U4
Microchip Technology

TRANS NPN 150V 0.3A U4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
Paquete: -
Request a Quote
300 mA
150 V
400mV @ 15mA, 150mA
50nA (ICBO)
40 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
MMBT5401-D87Z
onsemi

TRANS PNP 150V 0.6A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 350 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: -
Request a Quote
600 mA
150 V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
350 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SA1179-6-TB-E
Sanyo

PNP SILICON TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
Paquete: -
Request a Quote
150 mA
50 V
500mV @ 5mA, 50mA
100nA (ICBO)
200 @ 1mA, 6V
200 mW
180MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
JANSD2N2222AUB-TR
Microchip Technology

TRANS NPN 50V 0.8A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paquete: -
Request a Quote
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C
Surface Mount
3-SMD, No Lead
UB
2N3752
General Semiconductor

TRANS 80V 5A TO111

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 30 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-111-4, Stud
  • Supplier Device Package: TO-111
Paquete: -
Request a Quote
5 A
80 V
250mV @ 50mA, 1A
100nA (ICBO)
100 @ 1A, 5V
30 W
50MHz
-
Stud Mount
TO-111-4, Stud
TO-111
2N3487
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7.5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 115 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package: TO-61
Paquete: -
Request a Quote
7.5 A
60 V
-
-
-
115 W
-
-
Stud Mount
TO-211MA, TO-210AC, TO-61-4, Stud
TO-61
2N4926
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N6229
Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-