Página 589 - Transistores - Bipolar (BJT) - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - Bipolar (BJT) - Simple

Registros 20.307
Página  589/726
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JANTXV2N3960UB
Microsemi Corporation

TRANS NPN 12V UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paquete: 3-SMD, No Lead
En existencias2.800
-
12V
300mV @ 3mA, 30mA
10µA (ICBO)
60 @ 10mA, 1V
400mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
BD645-S
Bourns Inc.

TRANS NPN DARL 60V 8A TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 50mA, 5A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: TO-220-3
En existencias7.104
8A
60V
2.5V @ 50mA, 5A
500µA
750 @ 3A, 3V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STBV42D
STMicroelectronics

TRANS NPN 400V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias7.600
1A
400V
1.5V @ 250mA, 750mA
1mA
10 @ 400mA, 5V
1W
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PN100_D75Z
Fairchild/ON Semiconductor

TRANS NPN 45V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias3.376
500mA
45V
400mV @ 20mA, 200mA
50nA
100 @ 150mA, 5V
625mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC640_J35Z
Fairchild/ON Semiconductor

TRANS PNP 80V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias5.824
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1W
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
KSP5179TA
Fairchild/ON Semiconductor

TRANS NPN 12V 0.05A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 2GHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias6.800
50mA
12V
400mV @ 1mA, 10mA
20nA (ICBO)
25 @ 3mA, 1V
200mW
2GHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FZT956TC
Diodes Incorporated

TRANS PNP 200V 2A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
  • Power - Max: 3W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: TO-261-4, TO-261AA
En existencias6.336
2A
200V
370mV @ 300mA, 3A
50nA (ICBO)
100 @ 1A, 5V
3W
110MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2N3906_D27ZS00Z
Fairchild/ON Semiconductor

TRANS PNP 40V 0.2A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias7.248
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N3636L
Microsemi Corporation

TRANS PNP 175V 1A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
Paquete: TO-205AA, TO-5-3 Metal Can
En existencias3.456
1A
175V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
hot FCX495TC
Diodes Incorporated

TRANS NPN 150V 1A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
Paquete: TO-243AA
En existencias126.108
1A
150V
300mV @ 50mA, 500mA
100nA
100 @ 1mA, 10V
1W
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
QST3TR
Rohm Semiconductor

TRANS PNP 30V 5A TSMT6

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias3.696
5A
30V
250mV @ 40mA, 2A
100nA (ICBO)
270 @ 500mA, 2V
1.25W
200MHz
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
BC856B RFG
TSC America Inc.

TRANSISTOR, PNP, -65V, -0.1A, 22

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias7.984
100mA
65V
650mV @ 5mA, 100mA
100nA (ICBO)
220 @ 2mA, 5V
200mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot MJD47G
ON Semiconductor

TRANS NPN 250V 1A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
  • Current - Collector Cutoff (Max): 200µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
  • Power - Max: 1.56W
  • Frequency - Transition: 10MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.144
1A
250V
1V @ 200mA, 1A
200µA
30 @ 300mA, 10V
1.56W
10MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
DSC7101R0L
Panasonic Electronic Components

TRANS NPN 80V 0.5A MINIP3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
Paquete: TO-243AA
En existencias14.142
500mA
80V
400mV @ 30mA, 300mA
100nA (ICBO)
130 @ 150mA, 10V
1W
150MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
hot DCP52-16-13
Diodes Incorporated

TRANS PNP 60V 1A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: TO-261-4, TO-261AA
En existencias60.000
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
SMMBTA13LT1
onsemi

TRANS NPN DARL 30V 0.3A SOT23-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 225 mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paquete: -
Request a Quote
300 mA
30 V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
225 mW
125MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SBC807-16LT3
onsemi

TRANS PNP 45V 0.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paquete: -
Request a Quote
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
DSS5220T-7
Diodes Incorporated

TRANS PNP 20V 2A SOT23-3 T&R

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 500mA, 2V
  • Power - Max: 1.2 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: -
En existencias8.640
2 A
20 V
250mV @ 100mA, 2A
100nA (ICBO)
225 @ 500mA, 2V
1.2 W
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC847-QVL
Nexperia USA Inc.

BC847-Q/SOT23/TO-236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
Paquete: -
Request a Quote
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
2SB1508R
onsemi

2SB1508 - PNP EPITAXIAL PLANAR S

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 12 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 3 W
  • Frequency - Transition: 10MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PML
Paquete: -
Request a Quote
12 A
50 V
500mV @ 300mA, 6A
100µA (ICBO)
100 @ 1A, 2V
3 W
10MHz
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PML
PXTA42-QX
Nexperia USA Inc.

PXTA42-Q/SOT89/MPT3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 1.3 W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paquete: -
Request a Quote
100 mA
300 V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
1.3 W
50MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2N3446
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7.5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 115 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
Paquete: -
Request a Quote
7.5 A
80 V
-
-
-
115 W
-
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2N2878
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 30 W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-211MB, TO-63-4, Stud
  • Supplier Device Package: TO-63
Paquete: -
Request a Quote
5 A
60 V
-
-
-
30 W
-
-
Stud Mount
TO-211MB, TO-63-4, Stud
TO-63
2N4931U4
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
Paquete: -
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200 mA
250 V
1.2V @ 3mA, 30mA
250nA (ICBO)
50 @ 30mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
JANSD2N3635
Microchip Technology

TRANS PNP 140V 1A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
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1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BC807-25LVL
Nexperia USA Inc.

BC807-25L/SOT23/TO-236AB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 250 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
Paquete: -
En existencias29.556
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
160 @ 100mA, 1V
250 mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
JAN2N4236L
Microchip Technology

POWER BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
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1 A
80 V
600mV @ 100mA, 1A
1mA
40 @ 100mA, 1V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BC856CW
Diotec Semiconductor

IC

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paquete: -
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100 mA
65 V
650mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323