Página 530 - Transistores - Bipolar (BJT) - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - Bipolar (BJT) - Simple

Registros 20.307
Página  530/726
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
JAN2N1016B
Microsemi Corporation

TRANS NPN 100V 7.5A

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias6.896
-
-
-
-
-
-
-
-
-
-
-
TIP32B-S
Bourns Inc.

TRANS PNP 80V 3A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 40W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: TO-220-3
En existencias2.032
3A
80V
1.2V @ 375mA, 3A
300µA
10 @ 3A, 4V
40W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
KSD986OS
Fairchild/ON Semiconductor

TRANS NPN DARL 80V 1.5A TO-126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
Paquete: TO-225AA, TO-126-3
En existencias6.032
1.5A
80V
1.5V @ 1mA, 1A
10µA (ICBO)
4000 @ 1A, 2V
1W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
BUL903ED
STMicroelectronics

TRANS NPN 400V 5A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 3V
  • Power - Max: 70W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias2.976
5A
400V
1V @ 150mA, 1A
1mA
20 @ 500mA, 3V
70W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
JANTXV2N4236
Microsemi Corporation

TRANS PNP 80V 1A TO39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias5.904
1A
80V
600mV @ 100mA, 1A
1mA
30 @ 250mA, 1V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
hot 2PC4081Q,115
Nexperia USA Inc.

TRANS NPN 50V 0.15A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
Paquete: SC-70, SOT-323
En existencias36.000
150mA
50V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
200mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
KSC5305DFTTU
Fairchild/ON Semiconductor

TRANS NPN 400V 5A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
  • Power - Max: 75W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220-3F
Paquete: TO-220-3 Full Pack
En existencias17.772
5A
400V
500mV @ 400mA, 2A
10µA (ICBO)
8 @ 2A, 1V
75W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220-3F
BC638TA
Fairchild/ON Semiconductor

TRANS PNP 60V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias2.112
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1W
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS4032NZ,115
Nexperia USA Inc.

TRANS NPN 30V 4.9A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4.9A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 5.4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
  • Power - Max: 2W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: TO-261-4, TO-261AA
En existencias18.984
4.9A
30V
340mV @ 270mA, 5.4A
100nA
250 @ 2A, 2V
2W
145MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot ZX5T949GTA
Diodes Incorporated

TRANS PNP 30V 5.5A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 3W
  • Frequency - Transition: 110MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: TO-261-4, TO-261AA
En existencias253.920
5.5A
30V
210mV @ 500mA, 5.5A
20nA (ICBO)
100 @ 1A, 1V
3W
110MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot 2DA1213Y-13
Diodes Incorporated

TRANS PNP 50V 2A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
Paquete: TO-243AA
En existencias229.908
2A
50V
500mV @ 50mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
1W
160MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot DSS5240T-7
Diodes Incorporated

TRANS PNP 40V 2A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias7.648
2A
40V
350mV @ 200mA, 2A
100nA (ICBO)
210 @ 1A, 2V
600mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot FMMTA14TA
Diodes Incorporated

TRANS NPN DARL 40V 0.3A SOT23-3

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
  • Power - Max: 330mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias216.000
300mA
40V
900mV @ 100µA, 100mA
100nA
20000 @ 100mA, 5V
330mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2SA1122CCTR-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 55 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 12V
  • Power - Max: 150 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-CMPAK
Paquete: -
Request a Quote
100 mA
55 V
500mV @ 1mA, 10mA
500nA (ICBO)
160 @ 2mA, 12V
150 mW
-
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-CMPAK
2SCR542F3TR
Rohm Semiconductor

TRANS NPN 30V 3A HUML2020L3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L3
Paquete: -
En existencias7.722
3 A
30 V
200mV @ 50mA, 1A
100nA (ICBO)
200 @ 500mA, 2V
1 W
250MHz
150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
HUML2020L3
2SD1065R
onsemi

POWER BIPOLAR TRANSISTOR NPN

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 8A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
  • Power - Max: 90 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PB
Paquete: -
Request a Quote
15 A
50 V
400mV @ 400mA, 8A
100µA (ICBO)
100 @ 1A, 2V
90 W
20MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PB
2SA992-T-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N4123-AP
Micro Commercial Co

TRANS NPN 30V 0.2A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
  • Power - Max: 625 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
Paquete: -
Request a Quote
200 mA
30 V
300mV @ 5mA, 50mA
50nA (ICBO)
50 @ 2mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
JANKCDR2N2907A
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paquete: -
Request a Quote
600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
MPS2907ARLRA
onsemi

TRANS PNP SS GP 60V TO92

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SD1804S-E
onsemi

BIP NPN 8A 50V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC237A-AP
Micro Commercial Co

TRANS NPN 45V 0.1A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
  • Power - Max: 350 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
Paquete: -
Request a Quote
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
120 @ 2mA, 5V
350 mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
2SC6142-Q
Toshiba Semiconductor and Storage

TRANS NPN 375V 1.5A PW-MOLD2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 375 V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Stub Leads, IPAK
  • Supplier Device Package: PW-MOLD2
Paquete: -
Request a Quote
1.5 A
375 V
900mV @ 100mA, 800mA
50µA (ICBO)
100 @ 100mA, 5V
1.1 W
-
150°C (TJ)
Through Hole
TO-251-3 Stub Leads, IPAK
PW-MOLD2
KTA1504-O-TP
Micro Commercial Co

TRANS PNP 50V 0.15A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: -
Request a Quote
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
150 mW
80MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SC4519-5-TB-E
onsemi

BIP NPN 0.5A 45V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NSVT1418LT1G
onsemi

TRANS PNP 160V 1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 420 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paquete: -
En existencias6.870
1 A
160 V
500mV @ 25mA, 250mA
100nA (ICBO)
100 @ 100mA, 5V
420 mW
120MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BUX11-PBFREE
Central Semiconductor Corp

TRANS NPN 20A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20 A
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: 8MHz
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
20 A
-
-
-
-
-
8MHz
-
-
-
-
40406-TIN-LEAD
Central Semiconductor Corp

TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100µA, 10V
  • Power - Max: -
  • Frequency - Transition: 100MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: -
Request a Quote
-
50 V
-
-
30 @ 100µA, 10V
-
100MHz
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39