Página 489 - Transistores - Bipolar (BJT) - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - Bipolar (BJT) - Simple

Registros 20.307
Página  489/726
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BCP54H6327XTSA1
Infineon Technologies

TRANS NPN 45V 1A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
Paquete: TO-261-4, TO-261AA
En existencias6.160
1A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
2W
100MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
SE9302
Central Semiconductor Corp

TRANS NPN BIPOLAR TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 150mA, 7.5A
  • Current - Collector Cutoff (Max): 200µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 7.5A, 3V
  • Power - Max: 70W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: TO-220-3
En existencias5.984
10A
100V
2.5V @ 150mA, 7.5A
200µA (ICBO)
100 @ 7.5A, 3V
70W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TN6726A_D26Z
Fairchild/ON Semiconductor

TRANS PNP 30V 1.5A TO226

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-226
Paquete: TO-226-3, TO-92-3 Long Body (Formed Leads)
En existencias2.832
1.5A
30V
500mV @ 100mA, 1A
100nA (ICBO)
50 @ 1A, 1V
1W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-226
hot MJE271
ON Semiconductor

TRANS PNP DARL 100V 2A TO-225

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: 6MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
Paquete: TO-225AA, TO-126-3
En existencias150.600
2A
100V
3V @ 1.2mA, 120mA
1mA
1500 @ 120mA, 10V
1.5W
6MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BC237G
ON Semiconductor

TRANS NPN 45V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias4.736
100mA
45V
600mV @ 5mA, 100mA
15nA
380 @ 2mA, 5V
350mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N6338
ON Semiconductor

TRANS NPN 100V 25A TO-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
  • Power - Max: 200W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
Paquete: TO-204AA, TO-3
En existencias6.112
25A
100V
1.8V @ 2.5A, 25A
50µA
30 @ 10A, 2V
200W
40MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
MPSA56RLRAG
ON Semiconductor

TRANS PNP 80V 0.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias4.944
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC214L_L34Z
Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.232
500mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
140 @ 2mA, 5V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N6668
STMicroelectronics

TRANS PNP DARL 80V 10A TO-220

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
  • Power - Max: 65W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias14.976
10A
80V
3V @ 100mA, 10A
1mA
1000 @ 5A, 3V
65W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
BC850BWH6327XTSA1
Infineon Technologies

TRANS NPN 45V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
Paquete: SC-70, SOT-323
En existencias2.256
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
2SA0963
Panasonic Electronic Components

TRANS PNP 40V 1.5A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 10W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
Paquete: TO-225AA, TO-126-3
En existencias6.132
1.5A
40V
1V @ 150mA, 1.5A
100µA
80 @ 1A, 5V
10W
150MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
2SB1216T-H
ON Semiconductor

TRANS PNP 100V 4A TP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias4.048
4A
100V
500mV @ 200mA, 2A
1µA (ICBO)
200 @ 500mA, 5V
1W
130MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
BC817-40Q-7-F
Diodes Incorporated

TRANS NPN 45V 500MA SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 310mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias6.048
500mA
45V
700mV @ 50mA, 500mA
100nA
100 @ 100mA, 1V
310mW
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BSP62,115
Nexperia USA Inc.

TRANS PNP DARL 80V 1A SOT223

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: TO-261-4, TO-261AA
En existencias6.048
1A
80V
1.3V @ 500µA, 500mA
50nA
2000 @ 500mA, 10V
1.25W
200MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot MMBT2907ALT1G
ON Semiconductor

TRANS PNP 60V 0.6A SOT23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias64.190.028
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
300mW
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SCR563F3TR
Rohm Semiconductor

TRANS NPN 50V 6A HUML2020L3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
  • Power - Max: 1 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L3
Paquete: -
En existencias6.495
6 A
50 V
350mV @ 150mA, 3A
1µA (ICBO)
180 @ 500mA, 3V
1 W
200MHz
150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
HUML2020L3
2N2219-PBFREE
Central Semiconductor Corp

TRANS NPN 30V 0.8A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: -
En existencias5.058
800 mA
30 V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
800 mW
250MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
BC846BR-TR-PBFREE
Central Semiconductor Corp

TRANS NPN 65V SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: -
  • Frequency - Transition: 100MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: -
En existencias53.655
-
65 V
250mV @ 500µA, 10mA
15nA (ICBO)
200 @ 2mA, 5V
-
100MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
SJW3281G
onsemi

TRANSISTOR NPN 250V TO-3P

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BC849B
Diotec Semiconductor

BJT SOT23 30V NPN 0.25W 150C

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paquete: -
Request a Quote
100 mA
30 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
JANKCCF2N3500
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
Request a Quote
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANS2N3498
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
Request a Quote
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
MPSW01A-AP
Micro Commercial Co

TRANS NPN 40V 1A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
  • Power - Max: 625 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
Paquete: -
Request a Quote
1 A
40 V
500mV @ 100mA, 1A
100nA (ICBO)
60 @ 100mA, 1V
625 mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92
DXTN03100CFG-7
Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 1.2 W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Paquete: -
En existencias5.940
5 A
100 V
220mV @ 500mA, 5A
20nA
200 @ 1A, 2V
1.2 W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
8-PowerVDFN
PowerDI3333-8 (SWP) Type UX
JANTX2N2222AP
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paquete: -
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800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
BCP54-QX
Nexperia USA Inc.

BCP54-Q/SOT223/SC-73

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 650 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
Paquete: -
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1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
650 mW
180MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANTXV2N6299
Microchip Technology

TRANS PNP DARL 80V 500UA TO66

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500 µA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 1A, 3V
  • Power - Max: 64 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)
Paquete: -
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500 µA
80 V
2V @ 80mA, 8A
500µA
500 @ 1A, 3V
64 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
TO-66 (TO-213AA)
2SC3393T-AC
Sanyo

NPN EPITAXIAL PLANAR SILICON

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SSIP
  • Supplier Device Package: 3-SPA
Paquete: -
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500 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
100 @ 10mA, 5V
300 mW
200MHz
150°C (TJ)
Through Hole
3-SSIP
3-SPA