Transistores - Bipolar (BJT) - Simple

BC 808-40 E6327

Infineon Technologies

TRANS PNP 25V 0.5A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Paquete: TO-236-3, SC-59, SOT-23-3

2SA1931,NIKKIQ(J

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
• Power - Max: 2W
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paquete: TO-220-3 Full Pack

JANS2N3440

Microsemi Corporation

TRANS NPN 250V 1A

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 250V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max): 2µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 800mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

Paquete: TO-205AD, TO-39-3 Metal Can

2SA1244-Y(Q)

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
• Power - Max: 1W
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BD179

ON Semiconductor

TRANS NPN 80V 3A TO-225

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 30W
• Frequency - Transition: 3MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-225AA

Paquete: TO-225AA, TO-126-3

2N5551RLRM

ON Semiconductor

TRANS NPN 160V 0.6A TO-92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 160V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

KSA708CYBU

Fairchild/ON Semiconductor

TRANS PNP 60V 0.7A TO-92

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 700mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 50MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA)

PBSS2515E,115

NXP

TRANS NPN 15V 0.5A SC75

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 420MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SC-75

Paquete: SC-75, SOT-416

JANTXV2N6300

Microsemi Corporation

TRANS NPN DARL 60V 8A TO66

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 8A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
• Current - Collector Cutoff (Max): 500µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
• Power - Max: 75W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-213AA, TO-66-2
• Supplier Device Package: TO-66 (TO-213AA)

Paquete: TO-213AA, TO-66-2

2SB1216T-TL-E

ON Semiconductor

TRANS PNP 100V 4A TP-FA

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 1W
• Frequency - Transition: 130MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: 2-TP-FA

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

2SCR523V1T2L

Rohm Semiconductor

TRANS NPN 50V 0.1A VML

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

BC858BW-7-F

Diodes Incorporated

TRANS PNP 30V 0.1A SC70-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

Paquete: SC-70, SOT-323

TIP31C

STMicroelectronics

TRANS NPN 100V 3A TO-220

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (Max): 300µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paquete: TO-220-3

PMBT4401,215

Nexperia USA Inc.

TRANS NPN 40V 0.6A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

Paquete: TO-236-3, SC-59, SOT-23-3

MJH11021G

ON Semiconductor

TRANS PNP DARL 250V 15A TO247

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 15A
• Voltage - Collector Emitter Breakdown (Max): 250V
• Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
• Power - Max: 150W
• Frequency - Transition: 3MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paquete: TO-247-3

MMBT3906,215

Nexperia USA Inc.

TRANS PNP 40V 0.2A SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

Paquete: TO-236-3, SC-59, SOT-23-3

NTE2546

NTE Electronics, Inc

TRANS PNP DARL 60V 5A TO220

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 5 A
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2.5A
• Current - Collector Cutoff (Max): 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2.5A, 2V
• Power - Max: 1.75 W
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

Paquete: -

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2SB1412-R-TP

Micro Commercial Co

TRANS PNP 30V 5A DPAK

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5 A
• Voltage - Collector Emitter Breakdown (Max): 30 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
• Power - Max: 1 W
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK

Paquete: -

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2N5661U3

Microchip Technology

TRANS NPN 300V 2A U3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 300 V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
• Current - Collector Cutoff (Max): 200nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
• Power - Max: 2 W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: U3

Paquete: -

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2SC4617E3HZGTLQ

Rohm Semiconductor

TRANS PNP 50V 150MA EMT3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150 mW
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

Paquete: -

JANSF2N7373

Microchip Technology

RH POWER BJT

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
• Current - Collector Cutoff (Max): 50µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
• Power - Max: 4 W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-254-3, TO-254AA
• Supplier Device Package: TO-254AA

Paquete: -

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ZXTN07060BGQTC

Diodes Incorporated

Pwr Mid Perf Transistor SOT223 T

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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JANSM2N2907AUB-TR

Microchip Technology

TRANS PNP 60V 0.6A UB

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 500 mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB

Paquete: -

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2N4449UA

Microchip Technology

SMALL-SIGNAL BJT

• Transistor Type: NPN
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): 15 V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 400nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 500 mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Supplier Device Package: UA

Paquete: -

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2N327A

Microchip Technology

NPN POWER SILICON TRANSISTORS

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MSR2N3501UB-TR

Microchip Technology

RH SMALL-SIGNAL BJT

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

MMBTA55Q-13-F

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 310 mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: -

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PBSS5440D-QX

Nexperia USA Inc.

PBSS5440D-Q/SOT457/SC-74

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 320mV @ 600mA, 6A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 360 mW
• Frequency - Transition: 110MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

Paquete: -

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