Página 282 - Transistores - Bipolar (BJT) - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - Bipolar (BJT) - Simple

Registros 20.307
Página  282/726
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BD743B-S
Bourns Inc.

TRANS NPN 80V 15A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 15A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: TO-220-3
En existencias2.976
15A
80V
3V @ 5A, 15A
1µA
20 @ 5A, 4V
2W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
TIP33-S
Bourns Inc.

TRANS NPN 40V 10A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
  • Power - Max: 3.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
Paquete: TO-218-3
En existencias4.848
10A
40V
4V @ 2.5A, 10A
700µA
20 @ 3A, 4V
3.5W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
MPS6651G
ON Semiconductor

TRANS PNP 25V 1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.232
1A
25V
600mV @ 100mA, 1A
100nA
50 @ 500mA, 1V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BD437T
ON Semiconductor

TRANS NPN 45V 4A TO-225AA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 36W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
Paquete: TO-225AA, TO-126-3
En existencias7.008
4A
45V
800mV @ 300mA, 3A
100µA (ICBO)
85 @ 500mA, 1V
36W
3MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
hot 2SD2097TV2R
Rohm Semiconductor

TRANS NPN 20V 5A ATV

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: ATV
Paquete: 3-SIP
En existencias60.000
5A
20V
1V @ 100mA, 4A
500nA (ICBO)
180 @ 500mA, 2V
1W
150MHz
150°C (TJ)
Through Hole
3-SIP
ATV
ESM4045DV
STMicroelectronics

TRANS NPN DARL 450V 42A ISOTOP

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 42A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2A, 35A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 35A, 5V
  • Power - Max: 150W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
Paquete: ISOTOP
En existencias2.592
42A
450V
1.4V @ 2A, 35A
-
220 @ 35A, 5V
150W
-
150°C (TJ)
Chassis Mount
ISOTOP
ISOTOP?
BC394
STMicroelectronics

TRANS NPN 180V 0.1A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
Paquete: TO-206AA, TO-18-3 Metal Can
En existencias4.976
100mA
180V
400mV @ 5mA, 50mA
50nA (ICBO)
30 @ 10mA, 10V
400mW
-
175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
FMMT618TC
Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias2.368
2.5A
20V
200mV @ 50mA, 2.5A
100nA
200 @ 2A, 2V
625mW
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 2N5416
STMicroelectronics

TRANS PNP 300V 1A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 15MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias16.824
1A
300V
2.5V @ 5mA, 50mA
50µA
30 @ 50mA, 10V
1W
15MHz
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2N2221AUA
Microsemi Corporation

TRANS NPN 50V 0.8A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD
  • Supplier Device Package: 4-SMD
Paquete: 4-SMD
En existencias5.840
800mA
50V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD
4-SMD
2SC4027S-H
ON Semiconductor

TRANS NPN 160V 1.5A TP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias2.640
1.5A
160V
450mV @ 50mA, 500mA
1µA (ICBO)
140 @ 100mA, 5V
1W
120MHz
150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
hot 2N3055G
ON Semiconductor

TRANS NPN 60V 15A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
  • Power - Max: 115W
  • Frequency - Transition: 2.5MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
Paquete: TO-204AA, TO-3
En existencias4.272
15A
60V
3V @ 3.3A, 10A
700µA
20 @ 4A, 4V
115W
2.5MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
CMPT5089 TR
Central Semiconductor Corp

TRANS NPN 25V 0.05A SOT-23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias3.552
50mA
25V
500mV @ 1mA, 10mA
50nA (ICBO)
400 @ 100µA, 5V
350mW
50MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot TIP102TU
Fairchild/ON Semiconductor

TRANS NPN DARL 100V 8A TO-220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
Paquete: TO-220-3
En existencias14.916
8A
100V
2.5V @ 80mA, 8A
50µA
1000 @ 3A, 4V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot MJD340-13
Diodes Incorporated

TRANS NPN 300V 0.5A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1.56W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias369.864
500mA
300V
-
100µA (ICBO)
30 @ 50mA, 10V
1.56W
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
APT13003EU-G1
Diodes Incorporated

TRANS NPN 465V 1.5A TO126

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 465V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
  • Power - Max: 20W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
Paquete: TO-225AA, TO-126-3
En existencias28.488
1.5A
465V
400mV @ 250mA, 1A
-
13 @ 500mA, 2V
20W
4MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
NTE290A
NTE Electronics, Inc

TRANS PNP 80V 0.5A TO92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Power - Max: 600 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
Paquete: -
Request a Quote
500 mA
80 V
600mV @ 40mA, 400mA
1µA (ICBO)
100 @ 50mA, 5V
600 mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
JAN2N3765U4
Microchip Technology

TRANS PNP 60V 1.5A U4

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: U4
Paquete: -
Request a Quote
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
500 mW
-
-55°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
U4
JANTXV2N2946AUB
Microchip Technology

TRANS PNP 35V 0.1A UB

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 35 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
Paquete: -
Request a Quote
100 mA
35 V
-
10µA (ICBO)
50 @ 1mA, 500mV
400 mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
MSR2N3501
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
Paquete: -
Request a Quote
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BC56-16PAWQ-7
Diodes Incorporated

PWR MID PERF TRANSISTOR W-DFN202

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN Exposed Pad
  • Supplier Device Package: W-DFN2020-3 (Type A)
Paquete: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
500 mW
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
3-UDFN Exposed Pad
W-DFN2020-3 (Type A)
2C6420-MSCL
Microchip Technology

POWER BJT

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTXV2N6306T1
Microchip Technology

TRANS NPN 250V 8A TO254

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
Paquete: -
Request a Quote
8 A
250 V
-
-
-
-
-
200°C (TJ)
Through Hole
TO-254-3, TO-254AA
TO-254
JANS2N6676T1
Microchip Technology

TRANS NPN 300V 15A TO254

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
Paquete: -
Request a Quote
15 A
300 V
-
-
-
-
-
200°C (TJ)
Through Hole
TO-254-3, TO-254AA
TO-254
2N3110
Solid State Inc.

TRANS NPN 40V 1A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 1V
  • Power - Max: 800 mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: -
Request a Quote
1 A
40 V
1V @ 100mA, 1A
10nA
40 @ 150mA, 1V
800 mW
60MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SA1562-E
onsemi

BIP PNP 1.2A 25V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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2SD1005-T1-AY
Renesas Electronics Corporation

2SD1005 - SIGNAL DEVICE

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 160MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SC-62
Paquete: -
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1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
90 @ 100mA, 2V
2 W
160MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SC-62
MJD44H11-13
Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
  • Power - Max: 1.5 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
Paquete: -
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8 A
80 V
1V @ 400mA, 8A
1µA
60 @ 2A, 1V
1.5 W
3MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)