Página 46 - Transistores - Bipolar (BJT) - RF | Productos semiconductores discretos | Heisener Electronics
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Transistores - Bipolar (BJT) - RF

Registros 1.633
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Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFG 196 E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 9dB ~ 14.5dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
Paquete: TO-261-4, TO-261AA
En existencias5.168
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
9dB ~ 14.5dB
800mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BFP640FE6327
Infineon Technologies

TRANSISTOR NPN RF 4V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
Paquete: 4-SMD, Flat Leads
En existencias4.976
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
23dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
2SC3356-T1B-R25-A
CEL

SAME AS NE85633 NPN SILICON AMPL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias2.448
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MS2204
Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias2.432
20V
1.09GHz
-
10.8dB
600mW
15 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
M115
M115
MS2322
Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias2.016
65V
1.025GHz ~ 1.15GHz
-
10dB
87.5W
10 @ 100mA, 5V
1.5A
-
Chassis Mount
M115
M115
hot MS2211
Microsemi Corporation

TRANS RF BIPO 25W 900MA M222

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 48V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.3dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 900mA
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M222
  • Supplier Device Package: M222
Paquete: M222
En existencias14.544
48V
960MHz ~ 1.215GHz
-
9.3dB
25W
30 @ 250mA, 5V
900mA
250°C (TJ)
Chassis Mount
M222
M222
MRF553G
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paquete: Power Macro
En existencias4.320
16V
175MHz
-
11dB ~ 13dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
MPSH17_D26Z
Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias3.872
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSH10_D26Z
Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias4.464
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NESG2107M33-A
CEL

TRANS NPN 2GHZ M33

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
  • Gain: 7dB ~ 10dB
  • Power - Max: 130mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SuperMiniMold (M33)
Paquete: 3-SMD, Flat Leads
En existencias3.008
5V
10GHz
0.9dB ~ 1.5dB @ 2GHz
7dB ~ 10dB
130mW
140 @ 5mA, 1V
100mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SuperMiniMold (M33)
KSC1393RBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.328
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
40 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot KSC1393YBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias1.188.000
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
90 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NE68130-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paquete: SC-70, SOT-323
En existencias2.976
10V
7GHz
1.4dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE68819-T1
CEL

TRANS NPN 2GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: 3-SuperMiniMold (19)
Paquete: SOT-523
En existencias7.216
6V
5GHz
1.7dB ~ 2.5dB @ 2GHz
-
125mW
80 @ 3mA, 1V
100mA
150°C (TJ)
Surface Mount
SOT-523
3-SuperMiniMold (19)
MZ0912B50Y,114
Ampleon USA Inc.

TRANSISTOR POWER NPN SOT443A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-443A
  • Supplier Device Package: CDFM2
Paquete: SOT-443A
En existencias3.840
20V
1.215GHz
-
8dB
150W
-
3A
-
Surface Mount
SOT-443A
CDFM2
BFR505T,115
NXP

TRANS NPN 15V 9GHZ SOT-416

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
Paquete: SC-75, SOT-416
En existencias3.440
15V
9GHz
1.2dB ~ 2.1dB @ 900MHz
-
150mW
60 @ 5mA, 6V
18mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75
1214-32L
Microsemi Corporation

TRANS RF BIPO 125W 5A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.8dB ~ 8.9dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
Paquete: 55AW-1
En existencias6.304
50V
1.2GHz ~ 1.4GHz
-
7.8dB ~ 8.9dB
125W
20 @ 1A, 5V
5A
200°C (TJ)
Chassis Mount
55AW-1
55AW-1
hot UPA801T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias36.000
12V
4.5GHz
1.2dB @ 1GHz
9dB
200mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DSC9G02C0L
Panasonic Electronic Components

TRANS RF NPN 20V 15MA SSMINI3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
Paquete: SC-89, SOT-490
En existencias4.512
20V
650MHz
3.3dB @ 100MHz
24dB
125mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
hot ZUMT918TA
Diodes Incorporated

TRANSISTOR NPN 15V 100MA SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paquete: SC-70, SOT-323
En existencias216.000
15V
600MHz
6dB @ 60MHz
15dB
330mW
20 @ 3mA, 1V
100mA
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFU550XRR
NXP

TRANS RF NPN 12V 50MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
Paquete: SOT-143R
En existencias3.296
12V
11GHz
0.7dB @ 900MHz
21.5dB
450mW
60 @ 15mA, 8V
50mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
hot 2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB ~ 16.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paquete: SC-70, SOT-323
En existencias72.000
12V
7GHz
1.1dB @ 1GHz
11dB ~ 16.5dB
100mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 12dB ~ 17dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paquete: SC-70, SOT-323
En existencias53.310
12V
7GHz
1.1dB @ 1GHz
12dB ~ 17dB
100mW
120 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
NE67818-A
CEL

RF TRANS NPN 6V 12GHZ SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: -
Paquete: -
Request a Quote
6V
12GHz
1.7dB @ 2GHz
13dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
-
MRF313
MACOM Technology Solutions

TRANS RF NPN 30V 150MA 305A-01

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 16dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 305A-01
  • Supplier Device Package: 305A-01, Style 1
Paquete: -
Request a Quote
30V
2.5GHz
-
16dB
1W
20 @ 100mA, 10V
150mA
-
Chassis Mount
305A-01
305A-01, Style 1
2SC4227-A
CEL

RF TRANS NPN 10V 7GHZ SC70

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paquete: -
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10V
7GHz
1.4dB @ 1GHz
12dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
BFP182WE6327
Infineon Technologies

RF TRANSISTOR, L BAND, NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paquete: -
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12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
MSC1090M
Microsemi Corporation

RF TRANS 65V 1.15GHZ M220

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5.52A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
Paquete: -
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65V
1.025GHz ~ 1.15GHz
-
8.4dB
220W
15 @ 500mA, 5V
5.52A
200°C
Chassis Mount
M220
M220