Transistores - Bipolar (BJT) - RF

JANTXV2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
• Gain: 25dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-72-3 Metal Can
• Supplier Device Package: TO-72

Paquete: TO-72-3 Metal Can

2SC5011-T1-A

CEL

RF TRANSISTOR NPN SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 6.5GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
• Gain: 13dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343

Paquete: SC-82A, SOT-343

MS2203

Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 10.8dB ~ 12.3dB
• Power - Max: 5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
• Current - Collector (Ic) (Max): 300mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M220
• Supplier Device Package: M220

Paquete: M220

NE68033-T1B-R44-A

CEL

RF TRANSISTOR NPN SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
• Gain: 9dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 6V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

BFU725F,115

NXP

TRANS NPN 20GHZ SOT343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.8V
• Frequency - Transition: 70GHz
• Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: 4-DFP

Paquete: SOT-343F

NESG2107M33-T3-A

CEL

TRANS NPN 2GHZ M33

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.5dB @ 2GHz
• Gain: 7dB ~ 10dB
• Power - Max: 130mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 5mA, 1V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Leads
• Supplier Device Package: 3-SuperMiniMold (M33)

Paquete: 3-SMD, Flat Leads

NE685M03-T1-A

CEL

TRANSISTOR NPN 2GHZ M03

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
• Gain: -
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-623F
• Supplier Device Package: M03

Paquete: SOT-623F

NE97833-A

CEL

RF TRANSISTOR PNP SOT-23

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 5.5GHz
• Noise Figure (dB Typ @ f): 2dB @ 1GHz
• Gain: 10dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

MPSH10G

ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (Ic) (Max): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA)

BFG520/XR,235

NXP

TRANS RF NPN 9GHZ 15V SOT143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-143R
• Supplier Device Package: SOT-143R

Paquete: SOT-143R

BFG424W,115

NXP

TRANS NPN 10V 30MA SOT343R

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 22dB
• Power - Max: 135mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: CMPAK-4

Paquete: SC-82A, SOT-343

10502

Microsemi Corporation

TRANS BIPO 50V 500W 55SM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 8.5dB
• Power - Max: 1458W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
• Current - Collector (Ic) (Max): 40A
• Operating Temperature: 230°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55SM
• Supplier Device Package: 55SM

Paquete: 55SM

MAPRST0912-50

M/A-Com Technology Solutions

TRANS NPN 50W 960MHZ-1215MHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 10.16dB ~ 10.25dB
• Power - Max: 50W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 5.3A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SS9018GBU

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.1GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 400mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA)

SD1274-01

STMicroelectronics

TRANS NPN RF MICROWAVE VHF M113

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 70W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
• Current - Collector (Ic) (Max): 8A
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: M113
• Supplier Device Package: M113

Paquete: M113

MT3S16U(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 5V 1GHZ USM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 4GHz
• Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
• Gain: 4.5dBi
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
• Current - Collector (Ic) (Max): 60mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

BFU610F,115

NXP

TRANSISTOR NPN SOT343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: 15GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
• Gain: 13.5dB ~ 23.5dB
• Power - Max: 136mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V
• Current - Collector (Ic) (Max): 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: 4-DFP

Paquete: SOT-343F

BFR181WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 20MA SOT323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 175mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Paquete: SC-70, SOT-323

HFA3134IHZ96

Intersil

IC TRANS ARRAY NPN MATCH SOT23-6

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 8.5GHz
• Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V
• Current - Collector (Ic) (Max): 26mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6

Paquete: SOT-23-6

CA3227M96

Intersil

SMALL SIGNAL BIPOLAR TRANSISTOR

• Transistor Type: 5 NPN
• Voltage - Collector Emitter Breakdown (Max): 8V
• Frequency - Transition: 3GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 85mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: -

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NESG340033-T1B-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: 10GHz
• Noise Figure (dB Typ @ f): 0.7dB @ 1GHz
• Gain: 12dB
• Power - Max: 480mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 15mA, 3.3V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-MINIMOLD

Paquete: -

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PH3135-25S

MACOM Technology Solutions

TRANSISTOR,25W,3.1-3.5GHZ,2US,10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 3.5GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.5dB
• Power - Max: 195W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 3A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 2L-FLG
• Supplier Device Package: 2L-FLG

Paquete: -

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MRF429

MACOM Technology Solutions

TRANS RF NPN 50V 16A 211-11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 50V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 15dB
• Power - Max: 150W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
• Current - Collector (Ic) (Max): 16A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 211-11, Style 2
• Supplier Device Package: 211-11, Style 2

Paquete: -

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MS1019

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MS1030

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MRF1150MB

MACOM Technology Solutions

TRANS NPN 150W 906MHZ-1215MHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 9.8dB
• Power - Max: 150W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
• Current - Collector (Ic) (Max): 12A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 332A-03
• Supplier Device Package: 332A-03

Paquete: -

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PH1214-40M

MACOM Technology Solutions

TRANSISTOR,40W,40V,1.20-1.40GHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 70V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 8.5dB
• Power - Max: 100W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 3A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 2L-FLG
• Supplier Device Package: -

Paquete: -

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2SC5231C9-TL-E

onsemi

2SC5231 - RF SMALL SIGNAL BIPOLA

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB @ 1GHz
• Gain: 12dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: 3-SMCP

Paquete: -

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