Transistores - Bipolar (BJT) - RF

BFR 360F E6327

Infineon Technologies

TRANSISTOR RF NPN 6V TSFP-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

Paquete: SOT-723

BFP405E6740HTSA1

Infineon Technologies

TRANSISTOR NPN RF 4.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

Paquete: SC-82A, SOT-343

BFS 469L6 E6327

Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 5V, 10V
• Frequency - Transition: 22GHz, 9GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
• Gain: 14.5dB
• Power - Max: 200mW, 250mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
• Current - Collector (Ic) (Max): 50mA, 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: PG-TSLP-6

Paquete: 6-XFDFN

2SC4094-T1-A

CEL

RF TRANSISTOR NPN SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

Paquete: TO-253-4, TO-253AA

2SC3356-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
• Gain: 13dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

NE202930-A

CEL

RF TRANSISTOR NPN SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 1.15dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: 3-SuperMiniMold (30 PKG)

Paquete: SC-70, SOT-323

MS2212

Microsemi Corporation

TRANS RF BIPO 50W 1.8A M222

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 55V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.1dB ~ 8.9dB
• Power - Max: 50W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
• Current - Collector (Ic) (Max): 1.8A
• Operating Temperature: 250°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M222
• Supplier Device Package: M222

Paquete: M222

FH105A-TR-E

ON Semiconductor

TRANS NPN 30MA 10V MCP6

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
• Gain: 10dB @ 1.5GHz
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-MCP

Paquete: 6-TSSOP, SC-88, SOT-363

BF959G

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 700MHz
• Noise Figure (dB Typ @ f): 3dB @ 200MHz
• Gain: -
• Power - Max: 625mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Current - Collector (Ic) (Max): 100mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA)

MX0912B251Y,114

Ampleon USA Inc.

TRANSISTOR POWER NPN SOT439A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 7.4dB
• Power - Max: 690W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 15A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-439A
• Supplier Device Package: CDFM2

Paquete: SOT-439A

NE68139-A

CEL

RF TRANSISTOR NPN SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
• Gain: 13.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

Paquete: TO-253-4, TO-253AA

BFG520/X,235

NXP

TRANS RF NPN 9GHZ 15V SOT143B

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
• Gain: -
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

Paquete: TO-253-4, TO-253AA

MDS800

Microsemi Corporation

TRANS RF BIPO 1458W 60A 55ST1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8.6dB
• Power - Max: 1458W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Current - Collector (Ic) (Max): 60A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55ST-1
• Supplier Device Package: 55ST-1

Paquete: 55ST-1

UMIL3

Microsemi Corporation

TRANS RF BIPO 11W 700MA 55FT3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 225MHz ~ 400MHz
• Noise Figure (dB Typ @ f): -
• Gain: 11.8db ~ 13dB
• Power - Max: 11W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
• Current - Collector (Ic) (Max): 700mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: 55FT
• Supplier Device Package: 55FT

Paquete: 55FT

BFU630F,115

NXP

TRANSISTOR NPN SOT343F

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
• Gain: 13dB ~ 22.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: 4-DFP

Paquete: SOT-343F

PH2731-75L

M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 2.7-3.1GHZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 8.16dB ~ 8.86dB
• Power - Max: 75W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 7A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

Paquete: -

2SC4562GRL

Panasonic Electronic Components

TRANS NPN 50VCEO 50MA SMINI-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 50V
• Frequency - Transition: 250MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-85
• Supplier Device Package: SMini3-F2

Paquete: SC-85

BFP420FH6327XTSA1

Infineon Technologies

TRANS RF NPN 5.5V 35MA 4TSFP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• Frequency - Transition: 25GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
• Gain: 19.5dB
• Power - Max: 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

Paquete: 4-SMD, Flat Leads

MRF455MP

MACOM Technology Solutions

TRANSISTOR,<30MHZ,12.5V,60W,MATC

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 30MHz
• Noise Figure (dB Typ @ f): -
• Gain: 13dB
• Power - Max: 175W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
• Current - Collector (Ic) (Max): 15A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 211-07, Style 1
• Supplier Device Package: 211-07, Style 1

Paquete: -

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PH2226-50M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,50W,36V,2.20-

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 63V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 8dB
• Power - Max: 159W
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 6A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 2L-FLG
• Supplier Device Package: -

Paquete: -

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2SC5617-T3-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
• Gain: 8.5dB
• Power - Max: 140mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Lead
• Supplier Device Package: 3-MINIMOLD

Paquete: -

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MS2266

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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44022H

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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2SC5773JR-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 10.8GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 900MHz
• Gain: 11.9dB
• Power - Max: 700mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-MPAK

Paquete: -

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SD1019

Microsemi Corporation

RF TRANS NPN 35V 136MHZ M130

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 35V
• Frequency - Transition: 136MHz
• Noise Figure (dB Typ @ f): -
• Gain: 4.5dB
• Power - Max: 117W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 500mA, 5V
• Current - Collector (Ic) (Max): 9A
• Operating Temperature: 200°C
• Mounting Type: Stud Mount
• Package / Case: M130
• Supplier Device Package: M130

Paquete: -

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CPH6074-TL-E

onsemi

TRANSISTOR

• Transistor Type: 2 PNP (Dual)
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.2GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-CPH

Paquete: -

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5962-9474901MEA

Harris Corporation

NPN TRANSISTOR ARRAY

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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42106HS

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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