Diodos - Rectificadores
- Simple

BA159DGPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

SK32

Micro Commercial Co

DIODE SCHOTTKY 20V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AB, SMC

1N3293AR

GeneSiC Semiconductor

DIODE GEN REV 600V 100A DO205AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 17mA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

Paquete: DO-205AA, DO-8, Stud

VS-87HFR10

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 180°C

Paquete: DO-203AB, DO-5, Stud

VS-20ETF08STRR-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 20A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 100µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SRAF1620 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: TO-220-2 Full Pack

VS-10TQ035S-M3

Vishay Semiconductor Diodes Division

DIODE RECT 35V 10A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 35V
• Capacitance @ Vr, F: 900pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VSSC520S-M3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V DO-214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 200V
• Capacitance @ Vr, F: 280pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: DO-214AB, SMC

UG06DHA1G

TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 200V, 1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

SFT17GHA0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 500V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

1T2G R0G

TSC America Inc.

DIODE, 1A, 100V, TS-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

RB050LAM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

Paquete: SOD-128

MUR360S R7G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 600V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-214AB, SMC

SK510AFL-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 5A DO221AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 100V
• Capacitance @ Vr, F: 170pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SMA-FL)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-221AC, SMA Flat Leads

STPS2L60RL

STMicroelectronics

DIODE SCHOTTKY 60V 2A DO41

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: 150°C (Max)

Paquete: DO-204AL, DO-41, Axial

RGP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

NTE5896

NTE Electronics, Inc

DIODE GEN PURP 200V 16A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 12 mA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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NTE5933

NTE Electronics, Inc

DIODE GEN PURP 1KV 20A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 63 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 12 mA @ 1000 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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1N2159R

Solid State Inc.

DIODE GEN PURP REV 500V 40A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 500 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 500 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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V2PL63LHM3-H

Vishay General Semiconductor - Diodes Division

2A, 60V SMP TRENCH SKY RECT.

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 60 V
• Capacitance @ Vr, F: 360pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

HS3G-K-M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 37pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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C6D04065E

Wolfspeed, Inc.

DIODE SIL CARB 650V 16A TO252-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 650 V
• Capacitance @ Vr, F: 256pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

AS1K-HF

Comchip Technology

DIODE GEN PURP 800V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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CUHS15F30-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: US2H
• Operating Temperature - Junction: 150°C

Paquete: -

VS-15ETL06STRR-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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SDURB520

SMC Diode Solutions

DIODE GEN PURP 200V D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

FRS200CA120

SanRex Corporation

DIODE GEN PURP 1.2KV 200A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350 ns
• Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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FR1006GP-AP

Micro Commercial Co

DIODE GEN PURP 800V 10A R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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