Diodos - Rectificadores
- Simple

R6100830XXYZ

Powerex Inc.

DIODE GEN PURP 800V 300A DO205AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 13µs
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -65°C ~ 190°C

Paquete: DO-205AB, DO-9, Stud

VS-31DQ10

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 3.3A C16

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3.3A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: C-16, Axial
• Supplier Device Package: C-16
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: C-16, Axial

S2KW4C-1P

Semtech Corporation

DIODE GEN PURP 4KV 8A MODULE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4000V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 4V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 2µA @ 4000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: Module

VS-VSKE270-04PBF

Vishay Semiconductor Diodes Division

DIODE GEN 400V 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: MAGN-A-PAK (3)

CMSH2-20L BK

Central Semiconductor Corp

DIODE SCHOTTKY 20V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: 386pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-214AA, SMB

BY448TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1.5KV 2A SOD57

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1500V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 3µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57
• Operating Temperature - Junction: 140°C (Max)

Paquete: SOD-57, Axial

PMEG6030EP/8X

Nexperia USA Inc.

PMEG6030EP/SOD128/FLATPOWER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

ESH3B R7G

TSC America Inc.

DIODE, ULTRA FAST, 3A, 100V, 25N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-214AB, SMC

SR202HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-204AC, DO-15, Axial

SE10FG-M3/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 780ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-219AB

BAT43X RKG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 500nA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: SC-79, SOD-523

RSFBLHRVG

TSC America Inc.

DIODE, FAST, 0.5A, 100V, 150NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

B0520LWF RHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 385mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: SOD-123F

1N4447

Fairchild/ON Semiconductor

DIODE GEN PURP 100V DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 175°C (Max)

Paquete: DO-204AH, DO-35, Axial

VS-HFA08TB60PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-220-2

ACGRAT103L-HF

Comchip Technology

DIODE GEN PURP 600V 1A 2010

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: 2010/DO-214AC
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-214AC, SMA

BAS16J,115

Nexperia USA Inc.

DIODE GEN PURP 100V 250MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: 150°C (Max)

Paquete: SC-90, SOD-323F

1N2160

Solid State Inc.

DIODE GEN PURP 600V 40A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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1SS120TD-P-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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SBA320AL_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 20V 3A SOD123FL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 440 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

V10PWM60HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 10A SLIMDPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400 µA @ 60 V
• Capacitance @ Vr, F: 1580pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

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SS34-3HE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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V15P15-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 15A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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MD200U16D2-BP

Micro Commercial Co

DISCRETE SEMICONDUCTOR MODULES

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9 mA @ 1.6 kV
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: D2
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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CDLL6857

Microchip Technology

DIODE SCHOTTKY 16V 150MA DO213AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 16 V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 nA @ 16 V
• Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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RL104-BP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: A-405
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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1N1341R

Solid State Inc.

DIODE GEN PURP REV 50V 16A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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UF100G_R2_00001

Panjit International Inc.

DIODE GEN PURP 50V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 50 V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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