Página 899 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  899/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
UF4004 BK
Central Semiconductor Corp

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias3.552
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
50ns
10µA @ 400V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
APT60D30BG
Microsemi Corporation

DIODE GEN PURP 300V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38ns
  • Current - Reverse Leakage @ Vr: 250µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias6.736
300V
60A
1.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
38ns
250µA @ 300V
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
STTH40P03ST
STMicroelectronics

DIODE GEN PURP 300V 40A TO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: 175°C (Max)
Paquete: TO-220-3
En existencias7.616
300V
40A
1.1V @ 40A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 300V
-
Through Hole
TO-220-3
TO-220AB
175°C (Max)
VS-60APF02PBF
Vishay Semiconductor Diodes Division

DIODE INPUT 60A 200V TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-247-3
En existencias6.992
200V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
GPP60G-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: P600, Axial
En existencias3.248
400V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
5.5µs
5µA @ 400V
-
Through Hole
P600, Axial
P600
-55°C ~ 175°C
SRAS2030HMNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias7.392
30V
20A
570mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
1N5619GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 500nA @ 600V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-201AD, Axial
En existencias3.248
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
B350A-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 50V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AC, SMA
En existencias7.712
50V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
145pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1ALHM2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-219AB
En existencias4.608
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
VS-20ETF02FP-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-220-2 Full Pack
En existencias19.968
200V
20A
1.67V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 200V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-40°C ~ 150°C
hot MBRB8H100T4G
ON Semiconductor

DIODE SCHOTTKY 100V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 710mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5µA @ 100V
  • Capacitance @ Vr, F: 600pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias26.016
100V
8A
710mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5µA @ 100V
600pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
B350-13-F
Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-214AB, SMC
En existencias56.442
50V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
200pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 125°C
20FR140
Solid State Inc.

DIODE GEN PURP REV 1.4KV 20A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
1400 V
20A
1.2 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1400 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
ER5J
SMC Diode Solutions

DIODE GEN PURP 600V 5A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 58pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
600 V
5A
1.7 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
58pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
GS1GWG_R1_00001
Panjit International Inc.

DIODE GEN PURP 400V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias4.836
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
7pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
NTE6027
NTE Electronics, Inc

DIODE GEN PURP 160V 60A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 160 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 160 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
160 V
60A
1.4 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 160 V
-
Stud Mount
DO-203AA, DO-5, Stud
DO-5
-65°C ~ 175°C
S10KC-AU_R1_006A1
Panjit International Inc.

SMC PACKAGE,SURFACE MOUNT RECTIF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias7.200
800 V
10A
1.1 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
AS1FDHM3-H
Vishay General Semiconductor - Diodes Division

DIODE AVAL 200V 1.5A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias35.250
200 V
1.5A
1.15 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
1.3 µs
5 µA @ 200 V
8.8pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
LSIC2SD065A10A
Littelfuse Inc.

DIODE SIL CARB 650V 27A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 27A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 470pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias3.018
650 V
27A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
470pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
PCFFS50120AF
onsemi

DIODE SIL CARBIDE 1.2KV 50A DIE

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: 175°C (Max)
Paquete: -
Request a Quote
1200 V
50A
1.75 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
-
Surface Mount
Die
Die
175°C (Max)
ERT1EAFC_R1_00001
Panjit International Inc.

DIODE GEN PURP 300V 1A SMAF-C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 300 V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF-C
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
300 V
1A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 300 V
16pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF-C
-55°C ~ 150°C
SB240
SMC Diode Solutions

DIODE SCHOTTKY 40V 2A DO15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
En existencias111.297
40 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
170pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
CDBA1100LR-HF
Comchip Technology

DIODE SCHOTTKY 100V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: 120pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
Paquete: -
Request a Quote
100 V
1A
750 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
120pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
CMPSH1-4-TR-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 40V 1.75A SOT23F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 12 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 25pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 Flat Leads
  • Supplier Device Package: SOT-23F
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
40 V
1.75A
620 mV @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
12 ns
100 µA @ 30 V
25pF @ 25V, 1MHz
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
-65°C ~ 150°C
1N5552E3
Microchip Technology

DIODE GEN PURP 600V 5A B AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
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600 V
5A
1.2 V @ 9 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
-
-
Through Hole
B, Axial
B, Axial
-65°C ~ 175°C
V3NM153HM3-H
Vishay General Semiconductor - Diodes Division

3A, 150V, DFN3820A TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35 µA @ 150 V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
Paquete: -
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150 V
1.8A
970 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
35 µA @ 150 V
160pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
VS-150EBU02HN4
Vishay General Semiconductor - Diodes Division

DIODE GP 200V 150A POWERTAB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: PowerTab®
  • Supplier Device Package: PowerTab®
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
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200 V
150A
1.1 V @ 150 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
50 µA @ 200 V
-
Through Hole
PowerTab®
PowerTab®
-55°C ~ 175°C
VS-20L15T-M3
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 15V 20A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 15 V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
En existencias23.055
15 V
20A
520 mV @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 mA @ 15 V
2000pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 125°C