Diodos - Rectificadores
- Simple

IDH08S120AKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 7.5A TO220

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 7.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 180µA @ 1200V
• Capacitance @ Vr, F: 380pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-2

FR1D-13

Diodes Incorporated

DIODE GEN PURP 200V 1A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-214AA, SMB

S2KW20C-5N

Semtech Corporation

DIODE GEN PURP 20KV 6A MODULE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 20000V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 20V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 2µA @ 20000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: Module

JANTX1N5552US.TR

Semtech Corporation

D MET 3A STD 600V HRV SM TAPE &

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

VS-30WQ06FNTR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 60V
• Capacitance @ Vr, F: 145pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

EG01CW

Sanken

DIODE GEN PURP 1KV 500MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 3.3V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 50µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Axial

BYG21K-E3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 1µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

S3GHM6G

TSC America Inc.

DIODE, 3A, 400V, AEC-Q101, DO-21

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AB, SMC

1N4586GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AC, DO-15, Axial

UF4007HA0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

HS1K R3G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

RF05VA1STR

Rohm Semiconductor

DIODE GEN PURP 100V 500MA TUMD2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: TUMD2
• Operating Temperature - Junction: 150°C (Max)

Paquete: SC-90, SOD-323F

SR208-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 2A DO41

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 80V
• Capacitance @ Vr, F: 170pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -50°C ~ 125°C

Paquete: DO-204AL, DO-41, Axial

D8020LTP

Littelfuse Inc.

DIODE GEN PURP 800V 12.7A TO220

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 12.7A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Current - Reverse Leakage @ Vr: 20µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: TO-220AB-L
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: TO-220-3 Isolated Tab

RL 2ZV1

Sanken

DIODE GEN PURP 200V 2A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Axial

JPAD20-TO-92-2L

Linear Integrated Systems, Inc.

DIODE GEN PURP 35V 10MA TO92

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 35 V
• Current - Average Rectified (Io): 10mA
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 pA @ 20 V
• Capacitance @ Vr, F: 1.5pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-226-2, TO-92-2 (TO-226AC)
• Supplier Device Package: TO-92
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

MBR5H150PC-AU_R2_007A1

Panjit International Inc.

150V, SCHOTTKY, TO-277C, 5A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 150 V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277C
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

GC9703-00

Microchip Technology

DIODE SCHOTTKY 8V 10MA CHIP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 8 V
• Current - Average Rectified (Io): 10mA
• Voltage - Forward (Vf) (Max) @ If: 350 mV @ 1 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 nA @ 1 V
• Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Chip
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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MB110F_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 1A SMBF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 100 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AA, SMB Flat Leads
• Supplier Device Package: SMBF
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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MB210F_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 2A SMBF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 100 V
• Capacitance @ Vr, F: 90pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AA, SMB Flat Leads
• Supplier Device Package: SMBF
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

SB360-A

Diodes Incorporated

DIODE SCHOTTKY 60V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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R50430

Microchip Technology

STD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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RB078RSM15STL1

Rohm Semiconductor

150V 5A, TO-277GE, ULTRA LOW IR

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 175°C

Paquete: -

SF27G

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 500 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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PG204_R2_00001

Panjit International Inc.

DIODE GEN PURP 400V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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RJU60C6TDPP-AJ-T2

Renesas Electronics Corporation

DIODE GEN PURP 600V TO220FP

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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STF40250T

SMC Diode Solutions

TRENCH SCHOTTKY RECTIFIER 250V 4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 250 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 250 V
• Capacitance @ Vr, F: 690pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

CDBHD260-HF

Comchip Technology

DIODE BRIDGE 2A 60V TO-269AA

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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