Página 827 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  827/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
EGP10A-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias3.360
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
22pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
CSD04060E
Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 220pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias5.312
600V
4A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
220pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
hot MBRS260T3
ON Semiconductor

DIODE SCHOTTKY 60V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-214AA, SMB
En existencias24.240
60V
2A
630mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 125°C
hot MUR420RL
ON Semiconductor

DIODE GEN PURP 200V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-201AA, DO-27, Axial
En existencias56.760
200V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
RA202220XX
Powerex Inc.

DIODE MODULE 2.2KV 2000A PWRDISC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 2000A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 200mA @ 2200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: Pow-R-Disc
  • Operating Temperature - Junction: -
Paquete: DO-200AD
En existencias7.904
2200V
2000A
1.45V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
25µs
200mA @ 2200V
-
Chassis Mount
DO-200AD
Pow-R-Disc
-
hot U1B-E3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AC, SMA
En existencias827.868
100V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
24ns
5µA @ 100V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
S2B-M3/52T
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 100V DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AA, SMB
En existencias3.344
100V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 100V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ACGRKM4002-HF
Comchip Technology

DIODE GEN PURP 100V 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: KM/SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: SOD-123T
En existencias3.216
100V
1A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 100V
15pF @ 4V, 1MHz
Surface Mount
SOD-123T
KM/SOD-123F
-55°C ~ 150°C
SDURF1030
SMC Diode Solutions

DIODE GEN PURP 300V ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-220-2 Full Pack, Isolated Tab
En existencias21.492
300V
-
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
hot MBRF40250TG
ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220FP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 250V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-220-3 Full Pack
En existencias60.660
250V
40A
970mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 250V
500pF @ 5V, 1MHz
Through Hole
TO-220-3 Full Pack
TO-220FP
-65°C ~ 150°C
hot XBS104S13R-G
Torex Semiconductor Ltd

DIODE SCHOTTKY 40V 1A SOD323A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323A
  • Operating Temperature - Junction: 125°C (Max)
Paquete: SC-76, SOD-323
En existencias1.506.996
40V
1A
540mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
200µA @ 40V
35pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323A
125°C (Max)
hot APT100S20BG
Microsemi Corporation

DIODE SCHOTTKY 200V 120A TO247

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 2mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-247-2
En existencias5.760
200V
120A
950mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
2mA @ 200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
DMA10P1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
Request a Quote
1600 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1600 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
S8KS-E3-H
Vishay

8A, 800V, STD RECT, SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.6 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
800 V
1.6A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
3.6 µs
10 µA @ 800 V
72pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
1N5398-TP
Micro Commercial Co

DIODE GEN PURP 800V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
800 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
STPSC15H12WL
STMicroelectronics

DIODE SIL CARB 1.2KV 15A DO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 1200 V
  • Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
Paquete: -
En existencias1.860
1200 V
15A
1.5 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 1200 V
1200pF @ 0V, 1MHz
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
JAN1N5620US-TR
Microchip Technology

DIODE GEN PURP 800V 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 500 nA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: -
Request a Quote
800 V
1A
1.3 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
500 nA @ 800 V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
SDM05U40CSPQ-7
Diodes Incorporated

SCHOTTKY RECTIFIER X3-WLB1006-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 40 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: X3-WLB1006-2
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
40 V
500mA
460 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
75 µA @ 40 V
35pF @ 4V, 1MHz
Surface Mount
2-XDFN
X3-WLB1006-2
-55°C ~ 150°C
FESB8FTHE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
300 V
8A
1.3 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 300 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
MUR160K_AY_00001
Panjit International Inc.

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias14.982
600 V
1A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 600 V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 175°C
SS12HM3_B-I
Vishay

1A,20V,SM SCHOTTKY RECT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
20 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
SDS065J012C3-ISATH
Luminus Devices Inc.

DIODE 650V-12A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 37A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 36 µA @ 650 V
  • Capacitance @ Vr, F: 651pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
Request a Quote
650 V
37A
1.5 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
36 µA @ 650 V
651pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
SMD28PLHE3-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
80 V
2A
850 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
60pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
SS30100HE_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 3A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias5.037
100 V
3A
800 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 100 V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SBR20M150D1Q-13
Diodes Incorporated

DIODE SBR 150V 20A TO252

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias14.484
150 V
20A
900 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
24 ns
50 µA @ 150 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-55°C ~ 175°C
JAN1N5822US
Semtech Corporation

DIODE SCHOTTKY 40V 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: -
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40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
SQ-MELF
-
-65°C ~ 125°C
VS-150EBU04HN4
Vishay General Semiconductor - Diodes Division

DIODE GP 400V 150A POWERTAB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 93 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: PowerTab®
  • Supplier Device Package: PowerTab®
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
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400 V
150A
1.3 V @ 150 A
Fast Recovery =< 500ns, > 200mA (Io)
93 ns
50 µA @ 400 V
-
Through Hole
PowerTab®
PowerTab®
-55°C ~ 175°C
FR603GP-AP
Micro Commercial Co

DIODE GEN PURP 200V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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200 V
6A
1.3 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
10 µA @ 200 V
150pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C