Página 729 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  729/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N3613GP-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
En existencias6.560
-
-
-
-
-
-
-
-
-
-
-
VS-18TT045-F
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 18A 45V TO-220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: 1350pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-220-2
En existencias2.944
45V
18A
600mV @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
1350pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-50WQ06FNTRRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 60V
  • Capacitance @ Vr, F: 360pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.528
60V
5.5A
570mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 60V
360pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
BAT2402ELSE6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 4V 110MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 4V
  • Current - Average Rectified (Io): 110mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Capacitance @ Vr, F: 230pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2-1
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: 2-XFDFN
En existencias3.232
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
230pF @ 0V, 1MHz
Surface Mount
2-XFDFN
PG-TSSLP-2-1
-55°C ~ 150°C
D740N48T
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 3600V 1660A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
En existencias7.296
-
-
-
-
-
-
-
-
-
-
-
VS-SD300N16PC
Vishay Semiconductor Diodes Division

DIODE STD REC 1600V 300A DO9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.83V @ 1180A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
Paquete: DO-205AB, DO-9, Stud
En existencias4.928
1600V
300A
1.83V @ 1180A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
MBR6050PTE3/TU
Microsemi Corporation

DIODE SCHOTTKY 60A 50V TO-247AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
En existencias7.728
-
-
-
-
-
-
-
-
-
-
-
SJPA-D3V
Sanken

DIODE SCHOTTKY 30V 1A SJP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: 2-SMD, J-Lead
En existencias4.816
30V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 30V
-
Surface Mount
2-SMD, J-Lead
2-SMD
-40°C ~ 125°C
UF4004-E3/53
Vishay Semiconductor Diodes Division

DIODE 1A 400V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias5.840
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
MBR440MFST3G
ON Semiconductor

DIODE SCHOTTKY 40V 4A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: 8-PowerTDFN, 5 Leads
En existencias2.784
40V
4A
650mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 175°C
SR102-T
Diodes Incorporated

DIODE SCHOTTKY 20V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias80.208
20V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
hot CMPSH-3 TR
Central Semiconductor Corp

DIODE SINGLE SCHOTTKY 40V SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias684.000
30V
100mA (DC)
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
SI-E8000-4
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 24000 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 12 V @ 4 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 24000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -50°C ~ 150°C
Paquete: -
Request a Quote
24000 V
4A
12 V @ 4 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 24000 V
-
Chassis Mount
Module
-
-50°C ~ 150°C
BR310_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias4.845
100 V
3A
740 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 150°C
BAT43W_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 200MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
En existencias142.191
30 V
200mA
1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 30 V
-
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
ZHCS2000TA-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.5 ns
  • Current - Reverse Leakage @ Vr: 300 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
  • Operating Temperature - Junction: 125°C
Paquete: -
Request a Quote
40 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
5.5 ns
300 µA @ 30 V
50pF @ 25V, 1MHz
Surface Mount
SOT-23-6
SOT-26
125°C
ES1DFL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
200 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
-
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 150°C
TRS8V65H-LQ
Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 8A DFN8X8

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 520pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Operating Temperature - Junction: 175°C
Paquete: -
En existencias13.500
650 V
8A
1.35 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
520pF @ 1V, 1MHz
Surface Mount
4-VSFN Exposed Pad
4-DFN-EP (8x8)
175°C
RFN5TF6SC9
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C
Paquete: -
En existencias2.994
600 V
5A
1.55 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C
NRVHPRS1GFA
onsemi

DIODE GP 400V 800MA SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
400 V
800mA
1.3 V @ 800 mA
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 400 V
10pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
SA263
Diotec Semiconductor

DIODE FAST MELF 1600V 500NS 175C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF DO-213AB
  • Operating Temperature - Junction: -50°C ~ 175°C
Paquete: -
Request a Quote
1600 V
2A
1.8 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1600 V
-
Surface Mount
DO-213AB, MELF
MELF DO-213AB
-50°C ~ 175°C
SK54L-TP-HF
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 40 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
40 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 40 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
RGP15M
NTE Electronics, Inc

DIODE GEN PURP 1KV 1.5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
1000 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-
SJPW-T4
Sanken Electric USA Inc.

SCHOTTKY BARRIER DIODE (SURFACE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: SJP
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: -
Request a Quote
40 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
2-SMD, J-Lead
SJP
-40°C ~ 150°C
RL255M-TP
Micro Commercial Co

DIODE GEN PURP 600V 2.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
600 V
2.5A
1 V @ 2.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
MURSD1020A-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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200 V
10A
1 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
150pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-55°C ~ 150°C
MBR860S
SMC Diode Solutions

DIODE SCHOTTKY 60V 8A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 60 V
  • Capacitance @ Vr, F: 400pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias13.500
60 V
8A
650 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 60 V
400pF @ 5V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
RURP1540
Harris Corporation

DIODE AVALANCHE 400V 15A TO220AC

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
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400 V
15A
1.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
100 µA @ 400 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C