Diodos - Rectificadores
- Simple

RL205-T

Diodes Incorporated

DIODE GEN PURP 600V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-204AC, DO-15, Axial

VS-SD600R08PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 600A B8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Supplier Device Package: B-8
• Operating Temperature - Junction: -40°C ~ 190°C

Paquete: B-8

1N4593R

Powerex Inc.

DIODE GEN PURP 800V 150A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5.5mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -60°C ~ 200°C

Paquete: DO-205AA, DO-8, Stud

VS-40HFL10S02M

Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

LSM120G/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 20V SMBG

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

SS29L RQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

JANTXV1N5420

Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: B, Axial

VS-VSKE91/12

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 100A ADDAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 314A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: ADD-A-PAK (3)

ER3G-TP

Micro Commercial Co

DIODE GEN PURP 400V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -50°C ~ 175°C

Paquete: DO-214AB, SMC

FS8J

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO277-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3.37µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 118pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277-3
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-277, 3-PowerDFN

CSA2D-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 2A 200V DO-214AC SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.6A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.1µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 11pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

CD214A-B320LF

Bourns Inc.

DIODE SCHOTTKY 20V 3A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: 250pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-214AC, SMA

MBRM140T1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-216AA

S3DHM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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CDBQC0140L-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0402C

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 10 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: 0402C/SOD-923F
• Operating Temperature - Junction: 125°C

Paquete: -

1N2260A

Microchip Technology

DIODE GEN PURP 800V 22A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 22A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4 (DO-203AA)
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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ES3GB-HF

Comchip Technology

DIODE GP 400V 3A SMB/DO-214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB/DO-214AA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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SB15H45-7000E3-54

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 7A P600

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 7A
• Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 45 V
• Capacitance @ Vr, F: 1020pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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UG06D

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 600MA TS-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

RB451UMFHTL

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD3F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 90 µA @ 40 V
• Capacitance @ Vr, F: 6pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-85
• Supplier Device Package: UMD3F
• Operating Temperature - Junction: 125°C (Max)

Paquete: -

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TUAU8JH

Taiwan Semiconductor Corporation

50NS, 8A, 600V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

PSDP30120S1_T0_00001

Panjit International Inc.

DIODE GEN PURP 1.2KV 30A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200 ns
• Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

JANTXV1N6874UTK2CS-TR

Microchip Technology

POWER SCHOTTKY

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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R403A10F

Microchip Technology

STD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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JAN1N6775

Microchip Technology

DIODE GEN PURP 100V 15A TO257

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
• Capacitance @ Vr, F: 300pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-257-3
• Supplier Device Package: TO-257
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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STTH30RQ06WY

STMicroelectronics

DIODE GEN PURP 600V 30A DO247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-247-2 (Straight Leads)
• Supplier Device Package: DO-247
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

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SDH15KM

Semtech Corporation

DIODE GEN PURP 15KV 1A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 15000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 19.8 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 15000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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1N4148W

SMC Diode Solutions

DIODE GEN PURP 75V 250MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -