Página 353 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  353/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N4936GP-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias4.160
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
STTH1210G-TR
STMicroelectronics

DIODE GEN PURP 1KV 12A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.688
1000V
12A
2V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
10µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
SCH10000
Semtech Corporation

DIODE GP 10KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 10000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 10V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 10000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: Axial
En existencias6.608
10000V
500mA
10V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
5µs
1µA @ 10000V
-
Through Hole
Axial
-
-55°C ~ 150°C
A177PD
Powerex Inc.

DIODE GEN PURP 1.4KV 100A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.3µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: DO-205AA, DO-8, Stud
En existencias7.744
1400V
100A
-
Standard Recovery >500ns, > 200mA (Io)
2.3µs
-
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 125°C
GKR240/16
GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 320A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
Paquete: DO-205AB, DO-9, Stud
En existencias4.352
1600V
320A
1.4V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
60mA @ 1600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
5819SMJ/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AA, SMB
En existencias3.520
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 150°C
SF64GHR0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 200V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-201AD, Axial
En existencias4.368
200V
6A
975mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
UG2DHA0G
TSC America Inc.

DIODE, ULTRA FAST, 2A, 200V, 15N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-204AC, DO-15, Axial
En existencias3.744
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
UF3007-HF
Comchip Technology

DIODE GEN PURP 800V 3A DO201AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-27
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-201AA, DO-27, Axial
En existencias5.296
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
30pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
DO-27
-55°C ~ 125°C
GL41B-E3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-213AB, MELF (Glass)
En existencias6.064
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SF17G R1G
TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 500V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias5.776
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
BAS70 RFG
TSC America Inc.

DIODE GEN PURP 70V 70MA SOT-23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias7.792
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 125°C
PMEG10020AELPX
Nexperia USA Inc.

DIODE SCHOTTKY 100V 2A SOD128

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 300nA @ 100V
  • Capacitance @ Vr, F: 135pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: CFP5
  • Operating Temperature - Junction: 175°C (Max)
Paquete: SOD-128
En existencias3.296
100V
2A
770mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
5ns
300nA @ 100V
135pF @ 1V, 1MHz
Surface Mount
SOD-128
CFP5
175°C (Max)
hot RB530S-30TE61
Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA EMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: EMD2
  • Operating Temperature - Junction: 125°C (Max)
Paquete: SC-79, SOD-523
En existencias177.960
30V
100mA
450mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 10V
-
Surface Mount
SC-79, SOD-523
EMD2
125°C (Max)
hot DSEI60-06A
IXYS

DIODE GEN PURP 600V 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-247-2
En existencias9.924
600V
60A
1.8V @ 70A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
200µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
SK54A-LTP
Micro Commercial Co

DIODE SCHOTTKY 5A 40V SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AC, SMA
En existencias145.194
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UF800_T0_00001
Panjit International Inc.

DIODE GEN PURP 50V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
50 V
8A
1 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
1 µA @ 50 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VS-E5TX2112S2LHM3
Vishay General Semiconductor - Diodes Division

20A, 1200V, "X" SERIES GEN 5 FRE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 115 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias2.520
1200 V
20A
3.6 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
115 ns
50 µA @ 1200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 175°C
JANTX1N6768R
Microchip Technology

DIODE GEN PURP 50V 8A TO257

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Capacitance @ Vr, F: 150pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
50 V
8A
1.06 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 40 V
150pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
-
CD214B-S3K
Bourns Inc.

DIODE GEN PURP 800V 3A 2SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 23pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
800 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
23pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
2-SMD
-65°C ~ 175°C
688-25
Microchip Technology

DIODE GEN PURP 25KV 200MA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 25000 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 42 V @ 400 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
25000 V
200mA
42 V @ 400 mA
Small Signal =< 200mA (Io), Any Speed
500 ns
2 µA @ 25000 V
-
Chassis Mount
Module
-
-65°C ~ 150°C
DR010830B
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
PX2500Y
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 1.6 kV
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
Request a Quote
1600 V
25A
1.1 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 1.6 kV
-
Through Hole
P600, Axial
P600
-55°C ~ 175°C
PMEG6002EJ-QX
Nexperia USA Inc.

PMEG6002EJ-Q/SOD323F/SOD323F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 14pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: 150°C
Paquete: -
Request a Quote
60 V
200mA
600 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
100 µA @ 60 V
14pF @ 1V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323F
150°C
SB260_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 60V 2A DO15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias8.004
60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
SS1200FH-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323FH
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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200 V
1A
900 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 200 V
-
Surface Mount
SC-90, SOD-323F
SOD-323FH
-55°C ~ 150°C
BAS16LPQ-7
Diodes Incorporated

DIODE GEN PURP 75V 300MA 2DFN

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: X1-DFN1006-2
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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75 V
300mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
X1-DFN1006-2
-55°C ~ 150°C
UF4010G_AY_00001
Panjit International Inc.

DIODE GEN PURP 1KV 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias1.455
1000 V
4A
1.85 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 1000 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C