Diodos - Rectificadores
- Simple

R9S02430XX

Powerex Inc.

DIODE RECT 2400V 3935A PUCK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400V
• Current - Average Rectified (Io): 3935A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25µs
• Current - Reverse Leakage @ Vr: 75mA @ 2400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: TO-200 Variation
• Supplier Device Package: Hockey Puck
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: TO-200 Variation

STTH4R02D

STMicroelectronics

DIODE GEN PURP 200V 4A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 175°C (Max)

Paquete: TO-220-2

8AF4NPP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 50A B47

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-47
• Supplier Device Package: B-47
• Operating Temperature - Junction: -65°C ~ 195°C

Paquete: B-47

S400KR

GeneSiC Semiconductor

DIODE GEN REV 800V 400A DO205AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 400A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -60°C ~ 200°C

Paquete: DO-205AB, DO-9, Stud

VS-1N3671A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 12A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: DO-203AA, DO-4, Stud

SS2P5HM3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 2A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-220AA

S1GL MTG

TSC America Inc.

DIODE, 1A, 400V, SUB SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-219AB

RB520S-30 RSG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: SC-79, SOD-523

VS-240UR80D

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 320A DO205AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: 1.33V @ 750A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

Paquete: DO-205AB, DO-9, Stud

EGP30K

Fairchild/ON Semiconductor

DIODE GEN PURP 800V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-201AD, Axial

PMEG3010EB,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD523

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: 30pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: 150°C (Max)

Paquete: SC-79, SOD-523

PMEG3050BEP,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 5A SOD128

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 30V
• Capacitance @ Vr, F: 800pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: CFP5
• Operating Temperature - Junction: 150°C (Max)

Paquete: SOD-128

FFSD1065B

onsemi

DIODE SIL CARB 650V 13.5A DPAK

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 13.5A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Capacitance @ Vr, F: 424pF @ 1V, 100kHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

CS2M-E3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.1 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

RHRP890

Harris Corporation

DIODE AVALANCHE 900V 8A TO220AC

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 900 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 900 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

Request a Quote

E2400EC45E

IXYS

DIODE GEN PURP 4.5KV 2490A W111

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 2490A
• Voltage - Forward (Vf) (Max) @ If: 3.65 V @ 2400 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.22 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: W111
• Operating Temperature - Junction: -40°C ~ 140°C

Paquete: -

Request a Quote

LSIC2SD120A15

Littelfuse Inc.

DIODE SIL CARB 1.2KV 44A TO220AC

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 44A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
• Capacitance @ Vr, F: 920pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

Request a Quote

SS1040HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 1A SOD123HE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 µA @ 40 V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

SDS065J004D3-ISARH

Luminus Devices Inc.

DIODE 650V-4A TO220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 14A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 12 µA @ 650 V
• Capacitance @ Vr, F: 213pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2L
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

Request a Quote

PCFFS2065AF

onsemi

DIODE SIL CARBIDE 650V 20A DIE

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 650 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: 175°C (Max)

Paquete: -

Request a Quote

DSC06065D1

Diodes Incorporated

DIODE SIL CARBIDE 650V 6A TO252

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 650 V
• Capacitance @ Vr, F: 226pF @ 100mV, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (Type WX)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

Request a Quote

SF14G-AP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

1N3903R

Microchip Technology

FAST RECOVERY RECTIFIER

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 63 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 400 V
• Capacitance @ Vr, F: 150pF @ 10V, 1MHz
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

Request a Quote

1N3912R

Microchip Technology

FAST RECOVERY RECTIFIER

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200 ns
• Current - Reverse Leakage @ Vr: 15 µA @ 300 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

Request a Quote

R38100

Microchip Technology

RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

Request a Quote

6A20G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

US2DFL-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 28pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SMA-FL)
• Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

Request a Quote

USD535

Microchip Technology

DIODE SCHOTTKY 35V 75A DO5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35 V
• Current - Average Rectified (Io): 75A
• Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 35 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5 (DO-203AB)
• Operating Temperature - Junction: 175°C (Max)

Paquete: -

Request a Quote