Página 249 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  249/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
S1PDHE3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 6pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-220AA
En existencias4.816
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 200V
6pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
SD101A-T
Diodes Incorporated

DIODE SCHOTTKY 60V 15MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 15mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias2.624
60V
15mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
240NQ040
Vishay Semiconductor Diodes Division

DIODE MODULE 40V 240A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 610mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 40V
  • Capacitance @ Vr, F: 10300pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paquete: D-67 HALF-PAK
En existencias3.632
40V
240A
610mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
20mA @ 40V
10300pF @ 5V, 1MHz
Chassis Mount
D-67 HALF-PAK
HALF-PAK
-
SCPHN30
Semtech Corporation

DIODE RECT 30KV 5.5A STD ASSY

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30000V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 30V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 3000V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: Module
En existencias4.096
30000V
5.5A
30V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
2µs
1µA @ 3000V
-
-
Module
-
-55°C ~ 150°C
1N4589R
Powerex Inc.

DIODE GEN PURP 300V 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -60°C ~ 200°C
Paquete: DO-205AA, DO-8, Stud
En existencias5.040
300V
150A
-
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 300V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-60°C ~ 200°C
1N3890R
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-203AA, DO-4, Stud
En existencias4.496
100V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
GI1404-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-220-2
En existencias7.472
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
CDBMTS2150-HF
Comchip Technology

DIODE SCHOTTKY 150V 2A SOD123S

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 150V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123S
  • Supplier Device Package: SOD-123S
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: SOD-123S
En existencias4.608
150V
2A (DC)
920mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 150V
160pF @ 4V, 1MHz
Surface Mount
SOD-123S
SOD-123S
-55°C ~ 150°C
hot NSR1020MW2T3G
ON Semiconductor

DIODE SCHOTTKY 20V 1A SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 15V
  • Capacitance @ Vr, F: 29pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 125°C (Max)
Paquete: SC-76, SOD-323
En existencias34.800
20V
1A (DC)
540mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
40µA @ 15V
29pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
125°C (Max)
SB240E-G
Comchip Technology

DIODE SCHOTTKY 40V 2A DO15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: DO-204AC, DO-15, Axial
En existencias7.168
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
170pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 125°C
DSA1-18D
IXYS

DIODE AVALANCHE 1.8KV 2.3A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Radial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: Radial
En existencias19.668
1800V
2.3A
1.34V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
700µA @ 1800V
-
Through Hole
Radial
-
-40°C ~ 150°C
hot SBR3U60P1-7
Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: POWERDI?123
En existencias1.045.020
60V
3A
650mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 150°C
1N2434
Solid State Inc.

DIODE GEN PURP 500V 100A DO8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: -
Request a Quote
500 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 500 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
FF7
FF7
Surge

DIODE GEN PURP 1KV 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
1000 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
8.2pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
1N6625E3-TR
Microchip Technology

DIODE GEN PURP 1.1KV 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
1100 V
1A
1.95 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
1 µA @ 1100 V
-
Through Hole
A, Axial
A, Axial
-65°C ~ 150°C
S50410
Microchip Technology

DIODE GP 100V 300A DO205AB DO9

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: -
Request a Quote
100 V
300A
1.25 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 100 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
STTH25M06FP
STMicroelectronics

DIODE GP 600V 25A TO220FPAC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C (Max)
Paquete: -
En existencias3.990
600 V
25A
3.4 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
60 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C (Max)
BYV29B-400HE3_A-P
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: -
Request a Quote
400 V
8A
1.25 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 400 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-40°C ~ 150°C
V5N103HM3-I
Vishay General Semiconductor - Diodes Division

5A, 100V, DFN3820A TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 210 µA @ 100 V
  • Capacitance @ Vr, F: 560pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: -
En existencias41.850
100 V
2A
710 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
210 µA @ 100 V
560pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 150°C
MUR820H
Taiwan Semiconductor Corporation

25NS, 8A, 200V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias3.000
200 V
8A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
38DN06B02ELEMXPSA1
Infineon Technologies

DIODE GP 600V 5140A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5140A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
Paquete: -
En existencias54
600 V
5140A
960 mV @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 600 V
-
Clamp On
DO-200AC, K-PUK
BG-D-ELEM-1
180°C (Max)
1N4248US-TR
Microchip Technology

UFR,FRR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
HER304GH
Taiwan Semiconductor Corporation

50NS, 3A, 300V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias7.500
300 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 300 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
JANKCE1N5802
Microchip Technology

DIODE GEN PURP 50V 1A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 50 V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
50 V
1A
875 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 50 V
25pF @ 10V, 1MHz
Surface Mount
Die
Die
-65°C ~ 175°C
PNE20010EXD-QX
Nexperia USA Inc.

DIODE GEN PURP 200V 1A SOD323HP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 75 nA @ 200 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SOD323HP
  • Operating Temperature - Junction: 175°C
Paquete: -
En existencias27.000
200 V
1A
1.02 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
75 nA @ 200 V
10pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
SOD323HP
175°C
IDWD40E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
En existencias720
-
-
-
-
-
-
-
-
-
-
-
ES1J_R2_00001
Panjit International Inc.

SMA, SUPER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 600 V
7pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
1N4007-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
1000 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 1000 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C