Página 1867 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
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Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N5820US
Microsemi Corporation

DIODE SCHOTTKY 20V 3A B-MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: SQ-MELF, B
En existencias7.168
20V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 125°C
CD1005-B0140L
Bourns Inc.

DIODE SCHOTTKY 40V 100MA 1005

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 10V
  • Capacitance @ Vr, F: 9pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: 1005 (2512 Metric)
En existencias6.768
40V
100mA
550mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
30µA @ 10V
9pF @ 10V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-40°C ~ 125°C
RF101A2ST-32
Rohm Semiconductor

DIODE GEN PURP 200V 1A MSR

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 870mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-41 Mini, Axial
  • Supplier Device Package: MSR
  • Operating Temperature - Junction: 150°C (Max)
Paquete: DO-41 Mini, Axial
En existencias3.440
200V
1A
870mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 200V
-
Through Hole
DO-41 Mini, Axial
MSR
150°C (Max)
SB1H100HE3/54
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AL, DO-41, Axial
En existencias4.192
100V
1A
770mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
175°C (Max)
GI818HE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 750ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AC, DO-15, Axial
En existencias5.824
1000V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
750ns
10µA @ 1000V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
1N4937GL-T
Diodes Incorporated

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias3.280
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
GKR240/08
GeneSiC Semiconductor

DIODE GEN PURP 800V 320A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
Paquete: DO-205AB, DO-9, Stud
En existencias3.296
800V
320A
1.4V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
60mA @ 800V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
1N1199A
GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: DO-203AA, DO-4, Stud
En existencias3.200
50V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
UGB8BT-E3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias2.432
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
SRAS820HMNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.128
20V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 125°C
V10P8-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 3.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-277, 3-PowerDFN
En existencias4.256
80V
3.9A
680mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 80V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
SGL41-50-E3/97
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-213AB, MELF
En existencias4.976
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 150°C
FR307G A0G
TSC America Inc.

DIODE, FAST, 3A, 1000V, 500NS, D

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-201AD, Axial
En existencias6.992
-
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N6480HE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-213AB, MELF (Glass)
En existencias7.392
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SK110-TP (SMBSR1010)
Micro Commercial Co

DIODE SCHOTTKY 100V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA, HSMB
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-214AA, SMB
En existencias2.944
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA, HSMB
-55°C ~ 125°C
UF1B A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 100V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias5.120
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER106G R0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-204AL, DO-41, Axial
En existencias4.400
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N4148WL2-TP
Micro Commercial Co

DIODE SW 100V 150MA DFN10062L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: DFN1006-2
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: 0402 (1006 Metric)
En existencias4.656
100V
150mA
1.25V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
1.5pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
DFN1006-2
-65°C ~ 150°C
SURA8160T3G
ON Semiconductor

DIODE GEN PURP 600V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-214AC, SMA
En existencias6.208
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot RFUS10TF4S
Rohm Semiconductor

DIODE GEN PURP 430V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
Paquete: TO-220-2 Full Pack
En existencias10.680
430V
10A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
-
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)
hot 1N4007G
ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias240.480
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
BA157-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: -
Request a Quote
400 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 400 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
V8P22HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 2.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2.9A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: 440pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paquete: -
En existencias15.300
200 V
2.9A
900 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
440pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
ER3CB-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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150 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 150 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SRT14H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A TS-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
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40 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
1N1347B
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: -
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500 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 500 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
BAS70WS-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 70V 200MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 70 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias25.083
70 V
200mA
900 mV @ 15 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 70 V
2pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323
-55°C ~ 150°C
SR24-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 40V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 40 V
  • Capacitance @ Vr, F: 98pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias10.689
40 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 40 V
98pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C