Diodos - Rectificadores
- Simple

RJU4352SDPE-00#J3

Renesas Electronics America

DIODE GEN PURP 430V 20A LDPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 430V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 430V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-83
• Supplier Device Package: 4-LDPAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: SC-83

60EPF12

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 60A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 480ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-247-2

BAS40W-7

Diodes Incorporated

DIODE SCHOTTKY 40V 200MA SOT323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: SC-70, SOT-323

R5020418FSWA

Powerex Inc.

DIODE GEN PURP 400V 175A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 175A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 45mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: DO-205AA, DO-8, Stud

VS-1N2130A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 60A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: DO-203AB, DO-5, Stud

VS-12TQ035STRR-M3

Vishay Semiconductor Diodes Division

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.75mA @ 35V
• Capacitance @ Vr, F: 900pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 155°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

UH5JT-E3/4W

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-2

NTS1045EMFST1G

ON Semiconductor

DIODE SCHOTTKY 45V 10A 5DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 45V
• Capacitance @ Vr, F: 300pF @ 45V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: 8-PowerTDFN, 5 Leads

GP15D-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AC, DO-15, Axial

CD0603-B0230

Bourns Inc.

DIODE SCHOTTKY 30V 200MA 0603

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 30V
• Capacitance @ Vr, F: 12pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: 0603 (1608 Metric)

SS1FL4HM3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO-219AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Capacitance @ Vr, F: 115pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

SRT15HA0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

SS29L MQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-219AB

LL4448-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 300MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 8ns
• Current - Reverse Leakage @ Vr: 25nA @ 20V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: 175°C (Max)

Paquete: DO-213AC, MINI-MELF, SOD-80

GP2D050A120B

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 50A TO247-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 50A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: 3174pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-247-2

1N5407-T

Diodes Incorporated

DIODE GEN PURP 800V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-201AD, Axial

RB550VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2
• Operating Temperature - Junction: 150°C (Max)

Paquete: -

ES15GLWHRVG

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1.5A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 21pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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MSASC100H45HR

Microchip Technology

DIODE SCHOTTKY 45V 100A THINKEY1

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: ThinKey™1
• Supplier Device Package: ThinKey™1
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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S3415

Microchip Technology

STD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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S3440

Microchip Technology

RECTIFIER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 45A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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JANS1N5615-TR

Microchip Technology

DIODE GEN PURP 200V 1A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 200 V
• Capacitance @ Vr, F: 45pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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D4201N22TXPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 6010A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200 V
• Current - Average Rectified (Io): 6010A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

Paquete: -

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SS29LH

Taiwan Semiconductor Corporation

2A, 90V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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BAS21LS-QYL

Nexperia USA Inc.

DIODE GP 200V 250MA DFN1006BD-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 200 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2
• Operating Temperature - Junction: 150°C

Paquete: -

JAN1N5804US-TR

Microchip Technology

DIODE GEN PURP 100V 2.5A D-5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2.5A
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 100 V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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VS-A5PH6006L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 54 ns
• Current - Reverse Leakage @ Vr: 25 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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SR506H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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