Diodos - Rectificadores
- Simple

DGS20-025AS

IXYS

DIODE SCHOTTKY 250V 18A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 250V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

LLSD103C-7

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA MINMELF

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 350mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 10V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-213AC, MINI-MELF, SOD-80

1N2133A

GeneSiC Semiconductor

DIODE GEN PURP 300V 60A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: DO-203AB, DO-5, Stud

UPR40E3/TR13

Microsemi Corporation

DIODE GEN PURP 400V 2A POWERMITE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-216AA

UPS170/TR7

Microsemi Corporation

DIODE SCHOTTKY 1A 70V POWERMITE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

SE70PD-M3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.9A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2.9A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 20µA @ 200V
• Capacitance @ Vr, F: 76pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-277, 3-PowerDFN

SS39 R7G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AB, SMC

AG01V

Sanken

DIODE GEN PURP 400V 700MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 700mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Axial

UF3004-G

Comchip Technology

DIODE GEN PURP 300V 3A DO201AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-27
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-201AA, DO-27, Axial

HS2G R5G

TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 400V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AA, SMB

MPG06M-E3/100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A MPG06

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 600ns
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: MPG06, Axial

1N5408G R0G

TSC America Inc.

DIODE, 3A, 1000V, DO-201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-201AD, Axial

GP08J-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 800MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

ES1CHM2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

VS-16EDU06HM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 16A TO263AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
• Supplier Device Package: TO-263AC (SMPD)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab) Variant

RB162L-40TE25

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C (Max)

Paquete: DO-214AC, SMA

CDBF0245

Comchip Technology

DIODE SCHOTTKY 45V 200MA 1005

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Capacitance @ Vr, F: 9pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 1005 (2512 Metric)
• Supplier Device Package: 1005/SOD-323F
• Operating Temperature - Junction: 125°C (Max)

Paquete: 1005 (2512 Metric)

BAV20,133

Nexperia USA Inc.

DIODE GEN PURP 150V 250MA ALF2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2
• Operating Temperature - Junction: 175°C (Max)

Paquete: DO-204AH, DO-35, Axial

GC9702-00

Microchip Technology

DIODE SCHOTTKY 20V 35MA CHIP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 35mA
• Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 nA @ 15 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Chip
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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1N1346RA

Solid State Inc.

DIODE GEN PURP REV 400V 16A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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ES1JAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

SX36_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

S2M_R1_00001

Panjit International Inc.

DIODE GEN PURP 1KV 2A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB (DO-214AA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

1A4-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A R-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R-1, Axial
• Supplier Device Package: R-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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BAV16W-EVL

Venkel

Rectifier,SOD-123,75V,150mA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75 V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 75 V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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VS-25ETS12SLHM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 25A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

D1461S45TXPSA1

Infineon Technologies

DIODE GEN PURP 1720A D10026K-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 1720A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200, Variant
• Supplier Device Package: BG-D10026K-1
• Operating Temperature - Junction: -40°C ~ 140°C

Paquete: -

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ES2C-HF

Comchip Technology

DIODE GEN PURP 150V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 150 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -