Diodos - Rectificadores
- Simple

JANTXV1N6627US

Microsemi Corporation

DIODE GEN PURP 440V 1.75A D5B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 440V
• Current - Average Rectified (Io): 1.75A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 2µA @ 440V
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: SQ-MELF, E

IRKE196/08

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 195A INT-A-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 195A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (2)
• Supplier Device Package: Module
• Operating Temperature - Junction: -

Paquete: INT-A-PAK (2)

A170RN

Powerex Inc.

DIODE GEN PURP 800V 100A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

Paquete: DO-205AA, DO-8, Stud

S25K

GeneSiC Semiconductor

DIODE GEN PURP 800V 25A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-203AA, DO-4, Stud

LSM190G/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 90V SMBG

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

SS34L RTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-219AB

CDBF0230L-HF

Comchip Technology

DIODE SCHOTTKY 30V 200MA 1005

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 10V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 1005 (2512 Metric)
• Supplier Device Package: 1005/SOD-323F
• Operating Temperature - Junction: 125°C (Max)

Paquete: 1005 (2512 Metric)

HT11G R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

2A06G A0G

TSC America Inc.

DIODE, 2A, 800V, DO-15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-204AC, DO-15, Axial

NRVTS245ESFT1G

ON Semiconductor

DIODE SCHOTTKY 45V 2A SOD123FL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: SOD-123F

ER2J-LTP

Micro Commercial Co

DIODE GEN PURP 600V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-214AA, SMB

FMXK-1106S

Sanken

DIODE GEN PURP 600V 10A TO220F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 27ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220F-2L
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-220-2 Full Pack

MUR220RLG

ON Semiconductor

DIODE GEN PURP 200V 2A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

SD1206T040S1R0

AVX Corporation

DIODE SCHOTTKY 40V 1A 1206

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206 (3216 Metric)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: 1206 (3216 Metric)

MBR360G

ON Semiconductor

DIODE SCHOTTKY 60V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-201AA, DO-27, Axial

1N4509

Microchip Technology

STANDARD RECTIFIER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 22A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4 (DO-203AA)
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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SL14PL-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 1A SOD123FL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

FDLL4148-D87Z

onsemi

DIODE GEN PURP 100V 200MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 75 V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

JAN1N6662-TR

Microchip Technology

DIODE GEN PURP 400V 500MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 nA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-204AH (DO-35)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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CD5802

Microchip Technology

UFR,FRR

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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VS-90APS08L-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 90A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 90A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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SS220ALH

Taiwan Semiconductor Corporation

2A, 200V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 39pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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BAS16LSYL

Nexperia USA Inc.

DIODE GP 100V 215MA DFN1006BD-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 215mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 80 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2
• Operating Temperature - Junction: 150°C

Paquete: -

STD5100

SMC Diode Solutions

DIODE SCHOTTKY 100V DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 120 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

1N1191R

Solid State Inc.

DIODE GEN PURP REV 12A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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BAT54LP-7-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: X1-DFN1006-2
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: -

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TSP15H120S

Taiwan Semiconductor Corporation

15A, 120V, TRENCH SCHOTTKY

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 120 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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1N6857UR-1-TR

Microchip Technology

DIODE SCHOTTKY 16V 150MA DO213AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 16 V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 nA @ 16 V
• Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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