Diodos - Rectificadores
- Simple

GP02-40HM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4KV 250MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4000V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 4000V
• Capacitance @ Vr, F: 3pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

RGP5020HE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -

Paquete: Axial

UMA5817-T7

Microsemi Corporation

DIODE SCHOTTKY 20V 1A ULTRAMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Ultramite?
• Supplier Device Package: Ultramite?
• Operating Temperature - Junction: -50°C ~ 125°C

Paquete: Ultramite?

D3041N60T

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 6800V 2930A

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

VS-8EWF06STR-M3

Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

6A60G B0G

TSC America Inc.

DIODE, 6A, 600V, R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: R6, Axial

VS-10BQ100HM3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: 65pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-214AA, SMB

BYM07-300-E3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-213AA (Glass)

BYD33JGPHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

SE15PGHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 900ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 9.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-220AA

ES2AAHM2G

TSC America Inc.

DIODE, SUPER FAST, 2A, 50V, 35NS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

HT16G A1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: T-18, Axial

UF1AHR0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

SR103 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-204AL, DO-41, Axial

2CZ4005 RHG

TSC America Inc.

DIODE, 1A, 600V, SOD-123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: SOD-123

TSSA5U50 R3G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 5A, 50V

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 540mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

RB068L100TE25

Rohm Semiconductor

DIODE SCHOTTKY 100V 2A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C (Max)

Paquete: DO-214AC, SMA

SMD36PL-TP

Micro Commercial Co

DIODE SCHOTTKY 60V 3A SOD123FL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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RL207GP-TP

Micro Commercial Co

DIODE GEN PURP 1KV 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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SS56ALH

Taiwan Semiconductor Corporation

5A, 60V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 60 V
• Capacitance @ Vr, F: 245pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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UF1AH

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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SB660F_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 6A ITO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

JANS1N5802URS-TR

Microchip Technology

DIODE GP 60V 1A A SQ-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 50 V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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AES1J-HF

Comchip Technology

DIODE GEN PURP 600V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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SF44G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

PNE20030EP-QX

Nexperia USA Inc.

HYPERFAST/ULTRAFAST RECOVERY REC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 32pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128/CFP5
• Operating Temperature - Junction: 175°C

Paquete: -

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JANTX1N5195UR-TR

Microchip Technology

DIODE GP 180V 200MA DO213AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 180 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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SICPT40120YA-BP

Micro Commercial Co

SCHOTTKY DIODES

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.58 V @ 40 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 38 µA @ 1.2 kV
• Capacitance @ Vr, F: 2900pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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