Diodos - Rectificadores
- Simple

10ETF02STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 10A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 145ns
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

R9G01018XX

Powerex Inc.

DIODE MODULE 1KV 1800A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1800A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25µs
• Current - Reverse Leakage @ Vr: 150mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

Paquete: DO-200AB, B-PUK

VS-15ETX06-N3

Vishay Semiconductor Diodes Division

DIODE HYPERFAS 15A 600V TO-220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2

HSM150G/TR13

Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO215AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-215AA, SMB Gull Wing

MBRB10100-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NRVUS240VT3G

ON Semiconductor

DIODE GEN PURP 400V 2A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-214AA, SMB

FR604

SMC Diode Solutions

DIODE GEN PURP 400V 6A R-6

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: R6, Axial

GP10K-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AL, DO-41, Axial

SK28-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 2A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 80V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA, HSMB
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-214AA, SMB

SR103 R1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-204AL, DO-41, Axial

BAV21W-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: 175°C (Max)

Paquete: SOD-123

V20PWM45-M3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 20A 45V SLIMDPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 45V
• Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

RFN5BM2STL

Rohm Semiconductor

DIODE GEN PURP 200V 5A TO252

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Operating Temperature - Junction: 150°C (Max)

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

MBRD1060TR

SMC Diode Solutions

DIODE SCHOTTKY 60V DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: 300pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

CMPD5001 TR

Central Semiconductor Corp

DIODE GEN PURP 120V 400MA SOT23

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 400mA
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 100nA @ 90V
• Capacitance @ Vr, F: 35pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-236-3, SC-59, SOT-23-3

CR8U-02FP

Central Semiconductor Corp

DIODE GEN PURP 200V 8A TO220FP-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220FP-2
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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SE8D30DHM3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A SLIMSMAW

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 19pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SlimSMAW (DO-221AD)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

RS2KWF-HF

Comchip Technology

DIODE GEN PURP 800V 2A SOD123F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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JAN1N3913A

Microchip Technology

DIODE GEN PURP 400V 50A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5 (DO-203AB)
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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NRVBA120ET3G-VF01

onsemi

DIODE SCHOTTKY 20V 1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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RB168MM-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600 nA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

Paquete: -

1N4384-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 400V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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RS1KAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

SSL34H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: -

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V3NM103HM3-H

Vishay

3A, 100V, DFN3820A TRENCH SKY RE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 120 µA @ 100 V
• Capacitance @ Vr, F: 440pF @ 4V, 1MHz
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 2-VDFN
• Supplier Device Package: DFN3820A
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

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RGP30D

NTE Electronics, Inc

DIODE GEN PURP 200V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -

Paquete: -

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VS-E5PH3012L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 113 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

SBT350-04R

onsemi

RECTIFIER DIODE, SCHOTTKY, 1 PHA

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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