Diodos - Rectificadores
- Simple

IRD3CH31DB6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

GP10M-5400M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

S1JA-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

SBL550

Diodes Incorporated

DIODE SCHOTTKY 50V 5A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-220-2

MUR1515

ON Semiconductor

DIODE GEN PURP 150V 15A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2

10ETS12

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 10A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-220-2

SBRT10M50SP5-13

Diodes Incorporated

DIODE SBR 50V 10A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: PowerDI? 5

V8P6-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4.2A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 4.2A
• Voltage - Forward (Vf) (Max) @ If: 610mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-277, 3-PowerDFN

MUR115SHR5G

TSC America Inc.

DIODE, ULTRA FAST, 1A, 150V, 25N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 2µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-214AA, SMB

VSKY10301406-G4-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY CLP1406-G4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 30V
• Capacitance @ Vr, F: 230pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0502 (1406 Metric)
• Supplier Device Package: CLP1406-2L
• Operating Temperature - Junction: 150°C (Max)

Paquete: 0502 (1406 Metric)

JANTXV1N5617

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 500nA @ 400V
• Capacitance @ Vr, F: 35pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

RHRP8120

Fairchild/ON Semiconductor

DIODE GEN PURP 1.2KV 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 70ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: TO-220-2

NTE6104

NTE Electronics, Inc

DIODE GEN PURP 1.2KV 300A T-70

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 1500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 9 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: Stud
• Supplier Device Package: T-70
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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PSDF0860L1_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 90 ns
• Current - Reverse Leakage @ Vr: 100 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

US3A

Diotec Semiconductor

ULTRAFAST SMC 50V 3A 50NS 150C

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

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JAN1N3649R

Microchip Technology

DIODE GEN PURP 800V DO203AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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PNE20060EPEZ

Nexperia USA Inc.

DIODE GEN PURP 200V 6A CFP15B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

Paquete: -

IDD09SG60CXTMA2

Infineon Technologies

DIODE SIL CARB 600V 9A TO252-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 9A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 80 µA @ 600 V
• Capacitance @ Vr, F: 280pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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UF5402-TP

Micro Commercial Co

DIODE GEN PURP 200V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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1N4532-TR

Microchip Technology

DIODE GEN PURP 50V 125MA DO34

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 125mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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SBR8U60P5Q-13

Diodes Incorporated

DIODE SBR 60V 8A POWERDI5 T&R

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 330 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Supplier Device Package: PowerDI™ 5
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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ES3DV

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

RL105G

SMC Diode Solutions

DIODE GEN PURP 600V 1A A-405

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: A-405
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: -

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VS-E5TH1506-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 38 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

NTE109

NTE Electronics, Inc

DIODE GEN PURP 100V 40MA DO7

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 40mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 50 V
• Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7
• Operating Temperature - Junction: -65°C ~ 90°C

Paquete: -

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RS1FLM-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

ER802_T0_00001

Panjit International Inc.

DIODE GEN PURP 200V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

NA03QSA045

KYOCERA AVX

DIODE SCHOTTKY 45V 3A NA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 45 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
• Supplier Device Package: NA (DO-221BC)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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