Página 139 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  139/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot VS-30WQ06FNTRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 60V
  • Capacitance @ Vr, F: 145pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias26.448
60V
3.5A
610mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 60V
145pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
hot FFPF04S60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-220-2 Full Pack
En existencias4.400
600V
4A
2.6V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
hot MMSD71RKT1
ON Semiconductor

DIODE GEN PURP 80V 200MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: SOD-123
En existencias36.000
80V
200mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
2pF @ 0.5V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
R7220605ESOO
Powerex Inc.

DIODE MODULE 600V 500A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 50mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
Paquete: DO-200AB, B-PUK
En existencias7.216
600V
500A
2.25V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
A177P
Powerex Inc.

DIODE GEN PURP 1KV 100A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.3µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: DO-205AA, DO-8, Stud
En existencias3.392
1000V
100A
-
Standard Recovery >500ns, > 200mA (Io)
2.3µs
-
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 125°C
VS-16FLR20S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 16A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-203AA, DO-4, Stud
En existencias7.104
200V
16A
1.4V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
50µA @ 200V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 150°C
FR10G-TP
Micro Commercial Co

DIODE GEN PURP 400V DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AB, SMC
En existencias3.152
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot MURS360-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-214AB, SMC
En existencias192.000
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
CDBF0245-HF
Comchip Technology

DIODE SCHOTTKY 45V 200MA 1005

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 10V
  • Capacitance @ Vr, F: 9pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005/SOD-323F
  • Operating Temperature - Junction: 125°C (Max)
Paquete: 1005 (2512 Metric)
En existencias5.680
45V
200mA
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 10V
9pF @ 10V, 1MHz
Surface Mount
1005 (2512 Metric)
1005/SOD-323F
125°C (Max)
CR1F-100 TR
Central Semiconductor Corp

DIODE GEN PURP 1KV 1.5A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias3.536
1000V
1.5A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
S1FLG-M-18
Vishay Semiconductor Diodes Division

DIODE SW 400V DO-219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-219AB
En existencias3.408
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
hot SS2PH10-M3/84A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: DO-220AA
En existencias792.468
100V
2A
800mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
65pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
hot GL34B-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-213AA (Glass)
En existencias55.920
100V
500mA
1.2V @ 500mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
hot ISL9R460PF2
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-220-2 Full Pack
En existencias69.288
600V
4A
2.4V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-55°C ~ 150°C
SBR2530
Microchip Technology

DIODE SCHOTTKY 30V 25A DO4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
30 V
25A
1 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 30 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-
B260A-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 200pF @ 40V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
200pF @ 40V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
ES1ALH
Taiwan Semiconductor Corporation

35NS, 1A, 50V, SUPER FAST RECOVE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
50 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 50 V
10pF @ 4V, 1MHz
Surface Mount
SOD-123
Sub SMA
-55°C ~ 150°C
IDK12G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 12A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 360pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias1.584
650 V
12A
1.8 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
-
360pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
ST3060DJF
SMC Diode Solutions

60V, 30A, PDFNWB56-8L, ULTRA LOW

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6 mA @ 60 V
  • Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PDFNWB (5x6)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias9.000
60 V
30A
770 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
6 mA @ 60 V
1000pF @ 5V, 1MHz
Surface Mount
8-PowerVDFN
8-PDFNWB (5x6)
-55°C ~ 150°C
GE1003
Harris Corporation

DIODE GEN PURP 150V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 150 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
150 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
2 µA @ 150 V
45pF @ 4V, 1MHz
Through Hole
TO-204AE
TO-204AE
-65°C ~ 175°C
D1800N36TVFXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
Paquete: -
Request a Quote
3600 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 3600 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
1N5822US-TR-1
Microchip Technology

DIODE SCHOTTKY 40V 3A B SQ-MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: -
Request a Quote
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 125°C
SS2PH9HM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 29V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 29 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 29 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias20.466
29 V
2A
800 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 29 V
65pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
MBRB40250TT4G
onsemi

DIODE SCHOTTKY 250V 40A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 250 V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
250 V
40A
970 mV @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
250 µA @ 250 V
500pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
CDS6857UR-1-TR
Microchip Technology

SMALL-SIGNAL SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
FS2D-LTP
Micro Commercial Co

DIODE GEN PURP 200V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
Paquete: -
Request a Quote
200 V
2A
-
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
JANS1N6621
Microchip Technology

DIODE GEN PURP 400V 2A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
400 V
2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
500 nA @ 400 V
10pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 175°C
HERA806G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias3.000
600 V
8A
1.7 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
10 µA @ 600 V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C