Diodos - Rectificadores
- Simple

MBRH24035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: D-67

JANTXV1N6626US

Microsemi Corporation

DIODE GEN PURP 220V 1.75A D5B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 220V
• Current - Average Rectified (Io): 1.75A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 2µA @ 220V
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: SQ-MELF, E

GI1-1400GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 1A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AC, DO-15, Axial

1N5614GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 500nA @ 200V
• Capacitance @ Vr, F: 45pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AC, DO-15, Axial

10ETF10STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 310ns
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

R5021018FSWA

Powerex Inc.

DIODE GEN PURP 1KV 175A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 175A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 45mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: DO-205AA, DO-8, Stud

RD0506T-TL-H

ON Semiconductor

DIODE GEN PURP 600V 5A TPFA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TP-FA
• Operating Temperature - Junction: 150°C (Max)

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SFA807GHC0G

TSC America Inc.

DIODE, SUPER FAST, 8A, 500V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 500V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-220-2

SJPA-D3VL

Sanken

DIODE SCHOTTKY SMD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, J-Lead
• Supplier Device Package: 2-SMD
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: 2-SMD, J-Lead

SS33-E3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

Paquete: DO-214AB, SMC

ES1F M2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 18pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

STPSC10H12G-TR

STMicroelectronics

1200V POWER SCHOTTKY SILICON CAR

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 1200V
• Capacitance @ Vr, F: 725pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RB162LAM-60TR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

Paquete: SOD-128

RB751CM-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA VMN2M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 30mA
• Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500nA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: VMN2M
• Operating Temperature - Junction: 125°C (Max)

Paquete: 2-SMD, Flat Lead

PMEG4005ET,215

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 500mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Capacitance @ Vr, F: 50pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)
• Operating Temperature - Junction: 150°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

S2GTR

SMC Diode Solutions

DIODE GEN PURP 400V 2A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB (DO-214AA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AA, SMB

RSX071VA-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 700MA TUMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 420mV @ 700mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2
• Operating Temperature - Junction: 150°C (Max)

Paquete: 2-SMD, Flat Lead

1N914ATR

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 175°C (Max)

Paquete: DO-204AH, DO-35, Axial

SBR8U60P5-13

Diodes Incorporated

DIODE SBR 60V 8A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: PowerDI? 5

HV6

Diotec Semiconductor

DIODE GEN PURP 6KV 200MA DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6000 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 6 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 400 ns
• Current - Reverse Leakage @ Vr: 3 µA @ 6000 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

R42140TS

Microchip Technology

DIODE GP REV 1.4KV 125A DO205AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1400 V
• Current - Average Rectified (Io): 125A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -65°C ~ 200°C

Paquete: -

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S8GS-E3-I

Vishay General Semiconductor - Diodes Division

8A, 400V, STD RECT, SMC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
• Speed: Standard Recovery > 500ns, > 2A (Io)
• Reverse Recovery Time (trr): 3.4 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 63pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

SR504-TP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 40 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 150°C

Paquete: -

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RS5G-T

Taiwan Semiconductor Corporation

150NS, 5A, 400V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 57pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

PMEG100T30ELRX

Nexperia USA Inc.

DIODE SCHOTTKY 100V 3A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 12.5 ns
• Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
• Capacitance @ Vr, F: 310pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: 175°C

Paquete: -

SK33AH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 3A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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BAL99-HE3_A-18

Vishay

SWITCHING DIODE GENPURP SOT23

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6 ns
• Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: 150°C

Paquete: -

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GF3045PS-S1

SMC Diode Solutions

PLANAR SCHOTTKY MODULE 45V 30A G

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -