Página 1154 - Diodos - Rectificadores
- Simple | Productos semiconductores discretos | Heisener Electronics
Contáctenos
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Diodos - Rectificadores
- Simple

Registros 52.788
Página  1.154/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IRD3CH11DF6
Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
En existencias6.896
-
-
-
-
-
-
-
-
-
-
-
hot VS-8EWS08STRLPBF
Vishay Semiconductor Diodes Division

DIODE RECTIFIER 800V 8A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias8.244
800V
8A
1.1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 800V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
RGP15KHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AC, DO-15, Axial
En existencias4.816
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
hot 1N4153
Fairchild/ON Semiconductor

DIODE GEN PURP 75V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 50nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-204AH, DO-35, Axial
En existencias940.536
75V
200mA
880mV @ 20mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 50V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
R6011830XXYA
Powerex Inc.

DIODE GEN PURP 1.8KV 300A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 13µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-205AB, DO-9, Stud
En existencias4.768
1800V
300A
1.4V @ 800A
Standard Recovery >500ns, > 200mA (Io)
13µs
50mA @ 1800V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 150°C
S300J
GeneSiC Semiconductor

DIODE GEN PURP 600V 300A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -60°C ~ 200°C
Paquete: DO-205AB, DO-9, Stud
En existencias7.904
600V
300A
1.2V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-60°C ~ 200°C
hot BYM10-400HE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-213AB, MELF (Glass)
En existencias60.000
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
VS-1EMH02-M3/5AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15.2ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: DO-214AC, SMA
En existencias3.936
200V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
15.2ns
2µA @ 200V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 175°C
hot FFPF15S60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 15A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-220-2 Full Pack
En existencias21.240
600V
15A
2.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
VS-10TQ035PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 760mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-220-2
En existencias17.484
35V
10A
760mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
6mA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
JANTXV1N5620
Microsemi Corporation

DIODE GENERAL PURPOSE 800V 1A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: A, Axial
En existencias6.112
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
MUR180EG
ON Semiconductor

DIODE GEN PURP 800V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AL, DO-41, Axial
En existencias12.780
800V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
10µA @ 800V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
ACURN102-HF
Comchip Technology

DIODE GEN PURP 400V 1A 1206

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 1206/SOD-123
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: 2-SMD, No Lead
En existencias26.424
400V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
2-SMD, No Lead
1206/SOD-123
-65°C ~ 175°C
hot STPS3H100U
STMicroelectronics

DIODE SCHOTTKY 100V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: 175°C (Max)
Paquete: DO-214AA, SMB
En existencias580.104
100V
3A
840mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
-
Surface Mount
DO-214AA, SMB
SMB
175°C (Max)
hot B160-13-F
Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-214AC, SMA
En existencias4.438.500
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
110pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
1N2236A
Microchip Technology

DIODE GEN PURP 500V 5A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: -
Request a Quote
500 V
5A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 500 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
BAS20WTHE3-TP
Micro Commercial Co

DIODE GEN PURP 150V 200MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 150 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias14.640
150 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 150 V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C
MS8253-150A-TR
Microchip Technology

GAAS SCHOTTKY NON HERMETIC EPSM

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N1185AR
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: -
Request a Quote
150 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 150 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 200°C
MUR860J
WeEn Semiconductors

DIODE GEN PURP 600V 8A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: 175°C (Max)
Paquete: -
En existencias59.796
600 V
8A
1.25 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
90 ns
10 µA @ 600 V
-
Surface Mount
DO-214AB, SMC
SMC
175°C (Max)
A315A
Harris Corporation

DIODE GEN PURP 100V 3A AL-4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 100 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204, Axial
  • Supplier Device Package: AL-4
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
100 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
3 µA @ 100 V
100pF @ 4V, 1MHz
Through Hole
DO-204, Axial
AL-4
-65°C ~ 175°C
BAT54T-HF
Comchip Technology

DIODE SCHOTTKY 30V 200MA SOT523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
Request a Quote
30 V
200mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
2 µA @ 25 V
10pF @ 1V, 1MHz
Surface Mount
SOT-523
SOT-523
-55°C ~ 125°C
ES3HB
Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 3A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
500 V
3A
1.45 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 500 V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3DB
MDD

DIODE GEN PURP 200V 3A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
200 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 200 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SD101AWSHE3-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 15MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 15mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 50 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
En existencias17.760
60 V
15mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
1 ns
200 nA @ 50 V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
LL103A
Diotec Semiconductor

SCHOTTKY SOD-80 40V 0.35A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80C
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
En existencias8.562
40 V
350mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
10 ns
5 µA @ 30 V
50pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80C
-55°C ~ 125°C
SS14F
MDD

DIODE SCHOTTKY 40V 1A SMAF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
Request a Quote
40 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
110pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 125°C
IDK10G65C5XTMA2
Infineon Technologies

DIODE SIL CARB 650V 10A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
En existencias6.540
650 V
10A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
-
300pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C