Página 1115 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  1.115/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTXV1N6623US
Microsemi Corporation

DIODE GEN PURP 880V 1A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 880V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 500nA @ 880V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: SQ-MELF, A
En existencias2.160
880V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 880V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
200HF40PV
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 200A DO205AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 628A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AC, DO-30, Stud
  • Supplier Device Package: DO-205AC (DO-30)
  • Operating Temperature - Junction: -40°C ~ 180°C
Paquete: DO-205AC, DO-30, Stud
En existencias6.848
400V
200A
1.45V @ 628A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 400V
-
Chassis, Stud Mount
DO-205AC, DO-30, Stud
DO-205AC (DO-30)
-40°C ~ 180°C
FR40DR02
GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: DO-203AB, DO-5, Stud
En existencias3.776
200V
40A
1V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
FES16GTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 16A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-220-2
En existencias2.304
400V
16A
1.3V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
FESB16GT-E3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.704
400V
16A
1.3V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
175pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
NSB8MT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.752
1000V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
55pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
CRG03(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A SFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paquete: SOD-123F
En existencias6.672
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 150°C
CD214A-FS1150
Bourns Inc.

DIODE GEN PURP 150V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AC, SMA
En existencias6.352
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS115L RQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-219AB
En existencias4.000
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
1N4148WS-G3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: SC-76, SOD-323
En existencias2.016
75V
150mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100µA @ 100V
-
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C
AS3PG-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2.1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-277, 3-PowerDFN
En existencias6.192
400V
2.1A (DC)
920mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
10µA @ 400V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
DST1045S
Littelfuse Inc.

DIODE SCHOTTKY 10A 45V TO-277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 45V
  • Capacitance @ Vr, F: 639pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-PowerSMD, Flat Leads
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: 3-PowerSMD, Flat Leads
En existencias160.176
45V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
639pF @ 5V, 1MHz
Surface Mount
3-PowerSMD, Flat Leads
TO-277B
-55°C ~ 150°C
CGRMT4004-HF
Comchip Technology

DIODE GEN PURP 400V 1A SOD123H

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: SOD-123H
En existencias21.816
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
-
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
hot S1J-E3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AC, SMA
En existencias3.184.992
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
1µA @ 600V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS520BF-HF
Comchip Technology

DIODE SCHOTTKY 200V 5A SMBF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 200 V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
200 V
5A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 200 V
500pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
40HF60
Solid State Inc.

DIODE GEN PURP 600V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
Request a Quote
600 V
40A
1.3 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 600 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
NRVS1MFL
onsemi

DIODE GEN PURP 1KV 1A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias20.301
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
1 µA @ 1000 V
4pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
HS2KAH
Taiwan Semiconductor Corporation

75NS, 1.5A, 800V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias45.000
800 V
1.5A
1.7 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RURU8060
onsemi

DIODE GEN PURP 600V 80A TO218

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-218-1
  • Supplier Device Package: TO-218
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
600 V
80A
1.6 V @ 80 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
250 µA @ 600 V
-
Through Hole
TO-218-1
TO-218
-
S2KFS
Taiwan Semiconductor Corporation

2A, 800V, STANDARD RECOVERY RECT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias84.000
800 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 800 V
12pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
1SS88TD-E
Renesas Electronics Corporation

DIODE 250V 200MA DO35

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 250 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: -
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 250 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C
Paquete: -
Request a Quote
250 V
200mA
1 V @ 100 mA
-
100 ns
200 nA @ 250 V
1.5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C
SBR140S1FQ-7
Diodes Incorporated

DIODE SBR 40V 1A SOD123F

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias27.000
40 V
1A
510 mV @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 40 V
110pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
CGRB203-G
Comchip Technology

DIODE GEN PURP 200V 2A DO214AA S

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: 150°C
Paquete: -
Request a Quote
200 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 200 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
150°C
STPS1L40AFN
STMicroelectronics

DIODE SCHOTTKY 40V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 175°C
Paquete: -
Request a Quote
40 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
35 µA @ 40 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
175°C
JANTXV1N6911UTK2
Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
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30 V
25A
540 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 30 V
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
1N5392GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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100 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 100 V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
V2PM12LHM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 1.8A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 120 V
  • Capacitance @ Vr, F: 180pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paquete: -
En existencias26.148
120 V
1.8A
620 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 120 V
180pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-40°C ~ 175°C
APT60DQ120SG
Microchip Technology

DIODE GEN PURP 60A D3PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 320 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
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-
60A
3.3 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
320 ns
100 µA @ 1200 V
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
-55°C ~ 175°C