Página 108 - Diodos - Rectificadores
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Diodos - Rectificadores
- Simple

Registros 52.788
Página  108/1.886
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRF745HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: TO-220-2 Full Pack, Isolated Tab
En existencias4.368
45V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
hot 30HFU-200
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 35µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: DO-203AB, DO-5, Stud
En existencias6.576
200V
30A
1.45V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
35µA @ 200V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
hot MA2Q70500L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 1.5A NMINIP2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: NMiniP2-J1
  • Operating Temperature - Junction: -40°C ~ 125°C
Paquete: DO-214BA
En existencias18.000
30V
1.5A
370mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
3mA @ 30V
90pF @ 10V, 1MHz
Surface Mount
DO-214BA
NMiniP2-J1
-40°C ~ 125°C
R7221605ASOO
Powerex Inc.

DIODE MODULE 1.6KV 500A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
Paquete: DO-200AB, B-PUK
En existencias4.000
1600V
500A
2.25V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 1600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
189NQ150R-1
SMC Diode Solutions

DIODE SCHOTTKY 150V 180A PRM1-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 180A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 180A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5mA @ 150V
  • Capacitance @ Vr, F: 4500pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: PRM1-1 (Half Pak Module)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: HALF-PAK
En existencias5.456
150V
180A
1.07V @ 180A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5mA @ 150V
4500pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
PRM1-1 (Half Pak Module)
-55°C ~ 175°C
SRAF16100HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-220-2 Full Pack
En existencias3.856
100V
16A
920mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
VS-ETX1506STRR-M3
Vishay Semiconductor Diodes Division

DIODE ULTRAFAST 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 36µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias2.336
600V
15A
3.4V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
36µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
AU1PMHM3/85A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1000V 1A DO220AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: DO-220AA
En existencias4.816
1000V
1A
1.85V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 1000V
7.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
MUR340SB M4G
TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 400V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: DO-214AA, SMB
En existencias2.224
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 400V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
SK13-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA, HSMB
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-214AA, SMB
En existencias3.568
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA, HSMB
-55°C ~ 125°C
RSFDL RVG
TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-219AB
En existencias5.376
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
JANTX1N1202A
Microsemi Corporation

DIODE GEN PURP 200V 12A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: DO-203AA, DO-4, Stud
En existencias6.368
200V
12A
2.3V @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 200V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 150°C
FES8BT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-220-2
En existencias18.576
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
hot MUR820G
ON Semiconductor

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: TO-220-2
En existencias379.188
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
RB400DS-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 125pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
Request a Quote
40 V
500mA
550 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
125pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 125°C
SD830S_S2_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 8A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: -
Request a Quote
30 V
8A
550 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
-55°C ~ 125°C
1S2076TA-E-Q
Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SB1230-TP
Micro Commercial Co

DIODE SCHOTTKY 3A DO-201AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
Through Hole
DO-201AD, Axial
DO-201AD
-
MB10H100HM3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: -
Request a Quote
100 V
10A
770 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5 µA @ 100 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
46DN06B02ELEMXPSA1
Infineon Technologies

DIODE GP 600V 10450A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10450A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
Paquete: -
En existencias15
600 V
10450A
980 mV @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 600 V
-
Clamp On
DO-200AC, K-PUK
BG-D-ELEM-1
180°C (Max)
SV1580V_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 80V 15A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
80 V
15A
720 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 80 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 150°C
SS115LW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 1A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias16.929
150 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 150 V
-
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
FR605A-G
Comchip Technology

DIODE GEN PURP 600V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
Request a Quote
600 V
6A
1.3 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
100pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
VS-8ETH03-1HM3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 8A TO262AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 300 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: -
Request a Quote
300 V
8A
1.25 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
20 µA @ 300 V
-
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262AA
-55°C ~ 175°C
SF36G-TP
Micro Commercial Co

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
Paquete: -
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400 V
3A
1.27 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 400 V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
ERT3BAF_R1_00001
Panjit International Inc.

DIODE GEN PURP 100V 3A SMBF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias4.500
100 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 100 V
50pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
MUR60120BS-BP
Micro Commercial Co

DIODE GEN PURP 1.2KV 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 130 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
En existencias4.395
1200 V
60A
3.3 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
130 ns
5 µA @ 1200 V
170pF @ 4V, 1MHz
Through Hole
TO-247-2
TO-247AD
-55°C ~ 150°C
M1104NK450
IXYS

FAST DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paquete: -
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