Diodes Incorporated Productos

FN6250029

Diodes Incorporated

OSCILLATOR XO 62.5MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 62.5MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 40mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

Paquete: 4-SMD, No Lead

FN2500154

Diodes Incorporated

OSCILLATOR XO 25.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 25MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 2.5V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

Paquete: 4-SMD, No Lead

FD0500003

Diodes Incorporated

OSCILLATOR XO 5.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 5MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 15mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

Paquete: 4-SMD, No Lead

FY1200011

Diodes Incorporated

CRYSTAL 12.0000MHZ 18PF SMD

• Type: MHz Crystal
• Frequency: 12MHz
• Frequency Stability: ±30ppm
• Frequency Tolerance: ±20ppm
• Load Capacitance: 18pF
• ESR (Equivalent Series Resistance): 60 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -20°C ~ 70°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.043" (1.10mm)

Paquete: 4-SMD, No Lead

BSS123ATC

Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

DMT8012LSS-13

Diodes Incorporated

MOSFET N-CHA 80V 9.7A SO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1949pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

DI9942T

Diodes Incorporated

MOSFET N/P-CH 20V 2.5A 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.5A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.6W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

Paquete: 8-SOIC (0.154", 3.90mm Width)

ZTX776STZ

Diodes Incorporated

TRANS PNP 200V 1A E-LINE

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 200V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
• Power - Max: 1W
• Frequency - Transition: 30MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

Paquete: E-Line-3, Formed Leads

FMMTA14TC

Diodes Incorporated

TRANS NPN DARL 40V 0.3A SOT23-3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 300mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 330mW
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

MMSTA55-7

Diodes Incorporated

TRANS PNP 60V 0.5A SC70-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

Paquete: SC-70, SOT-323

BZT52C8V2S-7

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Paquete: SC-76, SOD-323

BZX84C27W-7-F

Diodes Incorporated

DIODE ZENER 27V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±7%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

Paquete: SC-70, SOT-323

PR1002-T

Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-204AL, DO-41, Axial

BAL99-7

Diodes Incorporated

DIODE GEN PURP 75V 300MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 300mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 2.5µA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-236-3, SC-59, SOT-23-3

AP7365-33SNG-7

Diodes Incorporated

IC REG LIN 3.3V 600MA 6DFN2020

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: 6-DFN2020 (2x2)

Paquete: 6-UDFN Exposed Pad

AZ7500BP-E1

Diodes Incorporated

IC REG CTRLR BUCK 16DIP

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 7 V ~ 36 V
• Frequency - Switching: 1kHz ~ 200kHz
• Duty Cycle (Max): 45%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

Paquete: 16-DIP (0.300", 7.62mm)

AZ574ZTR-E1

Diodes Incorporated

IC VREF SHUNT ADJ TO92-2

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 31V
• Voltage - Output (Max): 35V
• Current - Output: 30mA
• Tolerance: -
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 1.5mA
• Operating Temperature: -20°C ~ 75°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-2, TO-92-2 (TO-226AC)
• Supplier Device Package: TO-92-2

Paquete: TO-226-2, TO-92-2 (TO-226AC)

ZTL431AFTA

Diodes Incorporated

IC VREF SHUNT ADJ SOT23

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 600µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

DGD2181S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

AP4313KTR-E1

Diodes Incorporated

IC OPAMP DUAL SOT26

• Amplifier Type: Current Sense
• Number of Circuits: 1
• Output Type: -
• Slew Rate: -
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: 50nA
• Voltage - Input Offset: -
• Current - Supply: 600µA
• Current - Output / Channel: 50mA
• Voltage - Supply, Single/Dual (±): 2.5 V ~ 18 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6

Paquete: SOT-23-6

PI6CFGL401BZHIE

Diodes Incorporated

IC CLOCK 100MHZ 1CIR 32TQFN

• PLL: Yes
• Main Purpose: PCI Express (PCIe)
• Input: LVDS, Crystal
• Output: HCSL, LVCMOS, LVDS
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/Yes
• Frequency - Max: 100MHz
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

Paquete: 32-WFQFN Exposed Pad

PS8A0050NPEX

Diodes Incorporated

HEATER CONTROLLER DIP-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

DMN62D4LFB-7B

Diodes Incorporated

MOSFET BVDSS: 41V~60V X2-DFN1006

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 407mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW
• Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X1-DFN1006-3
• Package / Case: 3-UFDFN

Paquete: -

ZXTS1000NE6TA

Diodes Incorporated

TRANS PNP SW LOW SAT SOT23-6

• Transistor Type: PNP + Diode (Isolated)
• Current - Collector (Ic) (Max): 1.25 A
• Voltage - Collector Emitter Breakdown (Max): 12 V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1.25A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 885 mW
• Frequency - Transition: 220MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6

Paquete: -

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DMTH12H007SK3-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V TO252 T&

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

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BAS20Q-7-F

Diodes Incorporated

DIODE GP 150V 200MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 150 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: -

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DMN2053UW-7

Diodes Incorporated

MOSFET N-CH 20V 2.9A SOT323

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 470mW (Ta)
• Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

Paquete: -

DMT10H009LK3-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -