Diodes Incorporated Productos

ZVN4306GVTC

Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

BS170PSTOB

Diodes Incorporated

MOSFET N-CH 60V 0.27A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

Paquete: E-Line-3

ZVP0545ASTZ

Diodes Incorporated

MOSFET P-CH 450V 0.045A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

Paquete: E-Line-3

DMT6015LSS-13

Diodes Incorporated

MOSFET N-CHA 60V 9.2A SO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 30V
• Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 30V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

DMN3055LFDB-7

Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

• FET Type: 2 N-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
• Power - Max: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

Paquete: 6-UDFN Exposed Pad

ZTX651STOA

Diodes Incorporated

TRANS NPN 60V 2A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: 1W
• Frequency - Transition: 175MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

Paquete: E-Line-3, Formed Leads

DCP69-25-13

Diodes Incorporated

TRANS PNP 20V 1A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
• Power - Max: 1W
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

ZXTN619MATA

Diodes Incorporated

TRANS NPN 50V 4A 3-DFN

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
• Current - Collector Cutoff (Max): 25nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 3W
• Frequency - Transition: 165MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN
• Supplier Device Package: DFN2020B-3

Paquete: 3-UDFN

DZT5401-13

Diodes Incorporated

TRANS PNP 150V 0.6A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 1W
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

ZMM5261B-7

Diodes Incorporated

DIODE ZENER 47V 500MW MINIMELF

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 105 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 36V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

Paquete: DO-213AC, MINI-MELF, SOD-80

BAS116-7-F

Diodes Incorporated

DIODE GEN PURP 85V 215MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 85V
• Current - Average Rectified (Io): 215mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: TO-236-3, SC-59, SOT-23-3

GBU610

Diodes Incorporated

RECT BRIDGE GPP 1000V 6A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

Paquete: 4-SIP, GBU

AP1084T18L-U

Diodes Incorporated

IC REG LINEAR 1.8V 5A TO220-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 5A
• Current - Output: 5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: -
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

Paquete: TO-220-3

AP7365-08YG-13

Diodes Incorporated

IC REG LINEAR 0.8V 600MA SOT89-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 600mA
• Current - Output: 600mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA
• PSRR: 65dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

Paquete: TO-243AA

AZ34063AMTR-G1

Diodes Incorporated

IC REG BUCK BOOST ADJ 1.5A

• Function: Step-Up, Step-Down
• Output Configuration: Positive or Negative
• Topology: Buck, Boost
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 36V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 36V
• Current - Output: 1.5A (Switch)
• Frequency - Switching: Up to 180kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

AP3436DNTR-G1

Diodes Incorporated

IC REG BUCK ADJ 3A SYNC

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.3V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5.5V
• Current - Output: 3A
• Frequency - Switching: 1.25MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-WFDFN Exposed Pad
• Supplier Device Package: U-DFN3030-10

Paquete: 10-WFDFN Exposed Pad

ZXRE160FT4-7

Diodes Incorporated

IC VREF SHUNT ADJ DFN2015

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 0.2V
• Voltage - Output (Max): 18V
• Current - Output: 15mA
• Tolerance: ±1%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 1mA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: DFN1520H4-6

Paquete: 6-XFDFN Exposed Pad

ZXMS6005SGTA

Diodes Incorporated

IC LOW SIDE DRIVER

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 60V (Max)
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Current - Output (Max): 2A
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

PI5C3245QE

Diodes Incorporated

IC 8BIT 2PORT BUS SWITCH 20QSOP

• Type: Bus Switch
• Circuit: 8 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 20-QSOP

Paquete: 20-SSOP (0.154", 3.90mm Width)

PI5A4213GAEX

Diodes Incorporated

IC SWITCH DUAL SP3T 12CSP

• Switch Circuit: SP3T
• Multiplexer/Demultiplexer Circuit: 3:1
• Number of Circuits: 2
• On-State Resistance (Max): 2 Ohm
• Channel-to-Channel Matching (ΔRon): 100 mOhm (Max)
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 15ns, 12ns
• -3db Bandwidth: 30MHz
• Charge Injection: 35pC
• Channel Capacitance (CS(off), CD(off)): 50pF
• Current - Leakage (IS(off)) (Max): 80nA
• Crosstalk: -72dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 12-WFBGA, WLCSP
• Supplier Device Package: 12-CSP (2.0x1.5)

Paquete: 12-WFBGA, WLCSP

SMBJ51A-13

Diodes Incorporated

TVS DIODE 51VWM 82.4VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 7.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

Paquete: DO-214AA, SMB

1.5KE180A-T

Diodes Incorporated

TVS DIODE 154VWM 246VC DO201A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 154V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 246V
• Current - Peak Pulse (10/1000µs): 6.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

Paquete: DO-201AA, DO-27, Axial

1.5KE170A-T

Diodes Incorporated

TVS DIODE 145VWM 234VC DO201A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 145V
• Voltage - Breakdown (Min): 162V
• Voltage - Clamping (Max) @ Ipp: 234V
• Current - Peak Pulse (10/1000µs): 6.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

Paquete: DO-201AA, DO-27, Axial

AH180-PL-B

Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR 3SIP

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±6mT Trip, ±1mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.5 V ~ 5.5 V
• Current - Supply (Max): 16µA
• Current - Output (Max): -
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 3-SIP
• Supplier Device Package: 3-SIP

Paquete: 3-SIP

PI3EQX12904AZHEX

Diodes Incorporated

PCIE EQX V-QFN3590-42

• Type: -
• Applications: -
• Input: -
• Output: -
• Data Rate (Max): -
• Number of Channels: -
• Delay Time: -
• Signal Conditioning: -
• Capacitance - Input: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SDT10150GCT

Diodes Incorporated

DIODE ARR SCHOTT 150V 5A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 8 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

Paquete: -

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DMT6006LK3-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TO252 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 89.3W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

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DMN3020UTS-13

Diodes Incorporated

MOSFET N-CH 30V 15A 8TSSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

Paquete: -